2SCR544R Search Results

Contextual Info: Midium Power Transistors 80V / 2.5A 2SCR544R  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm) TSMT3 1.0MAX  Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) 2.9 0.85 0.4 0.7 1.6

Contextual Info: Midium Power Transistors 80V / 2.5A 2SCR544R  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm) TSMT3 1.0MAX  Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) 2.9 0.85 0.4 0.7 1.6

Contextual Info: 2SAR544R Datasheet PNP -2.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -2.5A TSMT3 Collector Base Emitter 2SAR544R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR544R 3) Low VCE(sat) VCE(sat)= -0.4V(Max.)

Contextual Info: 2SCR544R Datasheet NPN 2.5A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 2.5A TSMT3 Collector Base Emitter 2SCR544R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR544R 3) Low VCE(sat) VCE(sat)=0.30V(Max.)

Contextual Info: Midium Power Transistors 80V / 2.5A 2SCR544R  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm) TSMT3 1.0MAX  Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) 2.9 0.85 0.4 0.7 1.6

2SC6144

Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
Contextual Info: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.