2SC572 Search Results

2SC5720

Contextual Info: 2SC5720 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5720 ○ 中電力増幅用 ○ ストロボ用 • 単位: mm コレクタ飽和電圧が低い。 : VCE sat = 0.25 V (最大) (IC = 3 A/IB = 60 mA) 絶対最大定格 (Ta = 25°C)

2SC5725

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5725 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • Low collector-emitter saturation voltage VCE(sat)

2SC5725

Contextual Info: Transistors 2SC5725 Silicon NPN epitaxial planer type Unit: mm For DC-DC converter 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 2.90+0.20 –0.05 • Absolute Maximum Ratings Ta = 25°C Unit Collector to base voltage VCBO 20 V Collector to emitter voltage

Contextual Info: 2SC5729 Transistor Medium power transistor 30V, 0.5A 2SC5729 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 !External dimensions (Units : mm) !Features 1) High speed switching. (Tf : Typ. : 50ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5725 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm 0.40+0.10 –0.05 • Features 1.9±0.1 Unit Collector-base voltage (Emitter open) VCBO 20 V Collector-emitter voltage (Base open)

2SC5723

Contextual Info: Ordering number : ENN7398 2SC5723 NPN Triple Diffused Planar Silicon Transistor 2SC5723 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).

2SC5720

Abstract: 2sC5720 transistor transistor 2sc5720
Contextual Info: 2SC5720 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5720 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Low Saturation Voltage: Unit: mm VCE sat (1) = 0.25 V (max) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic

2SC5725

Contextual Info: Transistors 2SC5725 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • Low collector-emitter saturation voltage VCE sat • Mini type package, allowing downsizing of the equipment and

2SC5726

Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5726 PRELIMINARY Notics:This is not a final specification. Some parametric limits are subject to change. FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC5726 is a mini package resin sealed

2SC5727

Abstract: S2-12V
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5727 PRELIMINARY Notics:This is not a final specification. Some parametric limits are subject to change. FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC5727 is a super mini package resin sealed

2SC5725

Contextual Info: Transistors 2SC5725 Silicon NPN epitaxial planer type Unit: mm For DC-DC converter 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 2.90+0.20 –0.05 • Absolute Maximum Ratings Ta = 25°C Unit Collector to base voltage VCBO 20 V Collector to emitter voltage

IC 7402

Abstract: 7402 ic datasheet IC 7402 2SC5722
Contextual Info: 2SC5722 Ordering number : ENN7402 NPN Triple Diffused Planar Silicon Transistor 2SC5722 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).

2SC5725

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5725 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 3 (0.95) (0.95) 1.9±0.1 Collector current

IC 7402

Abstract: 7402 data sheet IC 7402 datasheet IC 7402 7402 ic datasheet 7402 ic 2SC5722
Contextual Info: 2SC5722 Ordering number : ENN7402 NPN Triple Diffused Planar Silicon Transistor 2SC5722 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).

transistor 2sc5720

Abstract: 2Sc5720 2sC5720 transistor
Contextual Info: 2SC5720 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5720 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Low Saturation Voltage: Unit: mm VCE sat (1) = 0.25 V (max) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic

2SC5728

Abstract: LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5728 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC5728 is a ultra super mini package resin sealed silicon NPN epitaxial transistor, 1,6 It is designed for high frequency application.

transistor 2sc5720

Contextual Info: 2SC5720 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5720 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Low Saturation Voltage: VCE sat (1) = 0.25 V (Max.) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic

2SA20

Abstract: 2SA2047 2SC5729 T106
Contextual Info: 2SC5729 Transistor Medium power transistor 30V, 0.5A 2SC5729 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 !External dimensions (Units : mm) !Features 1) High speed switching. (Tf : Typ. : 50ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)

IC-520

Abstract: 2SC5722
Contextual Info: 2SC5722 注文コード No. N 7 4 0 2 2SC5722 NPN 三重拡散プレーナ形シリコントランジスタ 超高精細度 CRT ディスプレイ水平偏向出力用 特長 ・高速度である。 ・高耐圧である（VCBO=1500V） 。 ・高信頼性である（HVP プロセス採用）

2sC5720 transistor

Abstract: transistor 2sc5720 2SC5720
Contextual Info: 2SC5720 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5720 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Low Saturation Voltage: Unit: mm VCE sat (1) = 0.25 V (max) (IC = 3 A/IB = 60 mA) Absolute Maximum Ratings (Ta = 25°C)

2SC572

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5725 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • Low collector-emitter saturation voltage VCE(sat)

IT02410

Abstract: 2SC5723 A1030 40c208
Contextual Info: Ordering number : ENN7398 2SC5723 NPN Triple Diffused Planar Silicon Transistor 2SC5723 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).

2SA2047

Abstract: 2SC5729 T106
Contextual Info: 2SC5729 Transistor Medium power transistor 30V, 0.5A 2SC5729 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 zExternal dimensions (Units : mm) zFeatures 1) High speed switching. (Tf : Typ. : 50ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and