2SC571 Search Results

2SC5713

Contextual Info: 2SC5713 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5713 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 • 単位: mm : hFE = 400~1000 IC = 0.5 A 直流電流増幅率が高い。

2SC5717

Abstract: 2-16E3A
Contextual Info: 2SC5717 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5717 Horizontal Deflection Output for Super High Resolution Display, Color TV, Digital TV. High Speed Switching Applications. • High voltage: VCBO = 1500 V • Low saturation voltage: VCE sat = 3 V (max)

C5716

Abstract: TOSHIBA Transistor c5716
Contextual Info: 2SC5716 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5716 Horizontal Deflection Output for High Resolution Display, Color TV • High voltage: VCBO = 1700 V • High speed: tf 2 = 0.2 µs (typ.) • Collector metal (fin) is fully covered with mold resin.

c5717

Contextual Info: 2SC5717 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5717 Horizontal Deflection Output for Super High Resolution Display, Color TV, Digital TV Unit: mm High Speed Switching Applications • High voltage: VCBO = 1500 V • Low saturation voltage: VCE sat = 3 V (max)

a 69154

Abstract: 2SA20 2044B 2SA2044 2SC5710 ta324
Contextual Info: Ordering number : ENN6915 2SA2044 / 2SC5710 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2044 / 2SC5710 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2045B [2SA2044 / 2SC5710]

Contextual Info: 2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)

2SC5712

Contextual Info: 2SC5712 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5712 High-Speed Switching Applications DC-DC Converter Applications Unit: mm DC-AC Converter Applications • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)

2SC571

Abstract: 2SC5714
Contextual Info: 2SC5714 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5714 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Unit: mm Strobe Applications • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)

Contextual Info: 2SC5714 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5714 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)

2SC5713

Contextual Info: 2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A · Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)

a 69154

Abstract: 69154 2044B 2SA2044 2SC5710 ENN6915
Contextual Info: Ordering number : ENN6915 2SA2044 / 2SC5710 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2044 / 2SC5710 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2045B [2SA2044 / 2SC5710]

Contextual Info: 2SC5714 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC5714 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Industrial Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)

Contextual Info: 2SC5714 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5714 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)

Contextual Info: 2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: h FE = 400 to 1000 I C = 0.5 A • Low collector-emitter saturation voltage: V CE (sat) = 0.15 V (max)

2SC5714

Contextual Info: 2SC5714 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5714 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.15 V (最大)

2-16E3A

Abstract: 2SC5716
Contextual Info: 2SC5716 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5716 Horizontal Deflection Output for High Resolution Display, Color TV • High voltage: VCBO = 1700 V • High speed: tf 2 = 0.2 µs (typ.) • Collector metal (fin) is fully covered with mold resin.

2SC5717

Abstract: 2-16E3A
Contextual Info: 2SC5717 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5717 Horizontal Deflection Output for Super High Resolution Display, Color TV, Digital TV. High Speed Switching Applications. • High voltage: VCBO = 1500 V · Low saturation voltage: VCE sat = 3 V (max)

2SC5713

Contextual Info: 2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)

Contextual Info: O rdering num ber : E N N 6 9 1 5 | PNP / NPN Epitaxial Planar Silicon Transistors 2SA2044 / 2SC5710 IS A /tY O l DC / DC Converter Applications Package Dimensions Applications • R e la y d r iv e r s , l a m p d r i v e r s , m o t o r d riv e rs , st r o b e s .

Contextual Info: Reliability Tests Report Product Name: 2SC5712 Package Name: PW-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

Contextual Info: 2SC5712 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5712 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ DC-AC コンバータ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.14 V (最大)

2SC5712

Contextual Info: 2SC5712 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5712 High-Speed Switching Applications DC-DC Converter Applications DC-AC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)

2SC5714

Contextual Info: 2SC5714 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5714 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.15 V (最大)

2SC5714

Contextual Info: 2SC5714 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5714 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)