2SC5609 TRANSISTOR Search Results

2SC5609 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

2SC5609 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Transistors 2SA2021 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609 Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 5˚ • High forward current transfer ratio hFE • SSS-Mini type package, allowing downsizing and thinning of the	Original	2SA2021 2SC5609	PDF
Contextual Info: Transistors 2SA2021 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609 Unit: mm 0.33+0.05 –0.02 0.10+0.05 –0.02 5˚ • High forward current transfer ratio hFE • SSS-Mini type package, allowing downsizing and thinning of the	Original	2SA2021 2SC5609	PDF
2SC5609 Abstract: 2sc5609 transistor transistor 2sc5609 2SA2021 Contextual Info: Transistors 2SC5609 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021 Unit: mm 0.33+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 0.10+0.05 –0.02 0.80±0.05 1.20±0.05 Collector current Peak collector current Collector power dissipation	Original	2SC5609 2SA2021 2SC5609 2sc5609 transistor transistor 2sc5609 2SA2021	PDF
2sc5609 Abstract: 2sc5609 transistor 2SA2021 Contextual Info: Transistors 2SA2021 Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SC5609 0.10+0.05 –0.02 0.33+0.05 –0.02 0.15 min. 5˚ • Features 1.20±0.05 0.80±0.05 3 1 0.23+0.05 –0.02 2 0.15 min. • High foward current transfer ratio hFE	Original	2SA2021 2SC5609 2sc5609 2sc5609 transistor 2SA2021	PDF
2sc5609 transistor Abstract: 2SC5609 transistor 2sc5609 2SA2021 Contextual Info: Transistors 2SA2021 Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SC5609 0.10+0.05 –0.02 0.33+0.05 –0.02 0.15 min. 5˚ • Features 1.20±0.05 0.80±0.05 3 1 0.23+0.05 –0.02 2 0.15 min. • High foward current transfer ratio hFE	Original	2SA2021 2SC5609 2sc5609 transistor 2SC5609 transistor 2sc5609 2SA2021	PDF
2SC5609 Abstract: 2sc5609 transistor transistor 2sc5609 2SA2021 SSSMini 3 Contextual Info: Transistors 2SC5609 Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SA2021 0.10+0.05 –0.02 0.33+0.05 –0.02 1 0.23+0.05 –0.02 0.15 min. 2 0.15 min. • High foward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the	Original	2SC5609 2SA2021 2SC5609 2sc5609 transistor transistor 2sc5609 2SA2021 SSSMini 3	PDF
2sc5609 transistor Abstract: 2SC5609 transistor 2sc5609 2SA20 2SA2021 Contextual Info: Transistors 2SC5609 Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SA2021 0.10+0.05 –0.02 0.33+0.05 –0.02 1 0.23+0.05 –0.02 0.15 min. 2 0.15 min. • High foward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the	Original	2SC5609 2SA2021 2sc5609 transistor 2SC5609 transistor 2sc5609 2SA20 2SA2021	PDF
2SC5609 Abstract: 2sc5609 transistor transistor 2sc5609 2SA2021 2SC560 Contextual Info: Transistors 2SA2021 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609 Unit: mm 0.33+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 0.10+0.05 –0.02 1 0.23+0.05 –0.02 0.15 min. 1.20±0.05 2 0.15 min. • High forward current transfer ratio hFE	Original	2SA2021 2SC5609 2SC5609 2sc5609 transistor transistor 2sc5609 2SA2021 2SC560	PDF
Contextual Info: Transistors 2SC5609 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021 Unit: mm 0.33+0.05 –0.02 0.10+0.05 –0.02 5˚ M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE • SSS-Mini type package, allowing downsizing and thinning of the	Original	2SC5609 2SA2021	PDF
Contextual Info: Transistors 2SA2021 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609 Unit: mm 0.33+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 0.10+0.05 –0.02 1 2 0.15 min. d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll	Original	2SA2021 2SC5609	PDF
transistor 2sc5609 Abstract: 2sc5609 MAS3781E 2sc5609 transistor 2SD2621 Contextual Info: New Subminiature Surface-Mount Package SSS Mini 3-Pin Package Series n Overview The Subminiature Surface-Mount Package Series with 1.2 mm x 0.8 mm x 0.52 mm in external size will contribute to the production of downsized, lightweight, and low-profile devices. In addition, the flat-lead structure of the	Original	MAS3132D MAS3132E MAS3781 MAS3795 MAS3781E MAS3795E MAS3784 transistor 2sc5609 2sc5609 2sc5609 transistor 2SD2621	PDF
2SC5609 Abstract: 2sc5609 transistor DA221 transistor 2sc5609 philips zener 2SA1774R 2SA1774S panasonic zener smd ZENER PANASONIC 2PC4617q Contextual Info: New Product Announcement February 2002 Introducing Second Generation Subminiature Schottky, Zener & Switching Diodes in SOT-523 3-pin SMD’s SOT-523 C TO P V IE W B B C E A G H K J Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D  	Original	OT-523 diD4448HTS 1SS362; DA221; MA3S133, MA3S137 MMBT2222AT MMBT3904T MMBT3906T 2SC5609 2sc5609 transistor DA221 transistor 2sc5609 philips zener 2SA1774R 2SA1774S panasonic zener smd ZENER PANASONIC 2PC4617q	PDF
STK411-230E Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for	Original	STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D	PDF
2SC5936 Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928	PDF