2SC56 Search Results

2SC5436

Abstract: 2SC5668
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA844TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3.6 to 4.2 GHz oscillation application • 2 different built-in transistors (2SC5436, 2SC5668)

2SC5436

Abstract: 2SC5600 NEC 821
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5436, 2SC5600) Q1: Low noise transistor NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

2SC5675

Abstract: 2SC5675-T1 APPLICATION OF IC 7492
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5675 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin ultra super minimold package ORDERING INFORMATION

2SC5604

Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5604 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • fT = 25 GHz “UHS0” Ultra High Speed Process technology adopted

2SA20

Abstract: 2SA2031 2SC5669
Contextual Info: SavantIC Semiconductor Product Specification 2SA2031 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SC5669 ·Wide area of safe operation ·Large current capacitance APPLICATIONS ·For audio frequency output applications

2SC5695

Contextual Info: 2SC5695 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5695 Horizontal Deflection Output for High Resolution Display, Color TV • High voltage: VCBO = 1500 V • Low saturation voltage: VCE sat = 3 V (max) • High speed: tf (2) = 0.1 µs (typ.)

Contextual Info: AEC-Q101 Qualified General purpose transistor 50V, 0.15A 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 2SC2412KFRA / 2SC4081FRA / 2SC4617FRA/ /2SC5658FHA Dimensions (Unit : mm) 0.7 (3) Collector (2) Base 0.8 0.4 0.4 (1) 0.22 (3) 0.13 0~0.1 0.15Max. 0~0.1 0.7

Contextual Info: AEC-Q101 Qualified High-frequency Amplifier Transistor 25V, 50mA, 300MHz 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K / 2SC2413K 2SC5659FHA / 2SC4618FRA / 2SC4098FRA Dimensions (Unit : mm) 1.2 0.8 1.2 0.32 0.2 0.2 (2) (3) 0.8 2SC5659FHA 2SC5659 0.4 0.4 Features

2SC5676

Abstract: 2SC5737 MARKING VT
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA859TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5676) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

5252 F 0911

Abstract: 5252 F 1108 2SC5615-T3 2SC5615 5252 F 0906
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5615 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • 1005 package employed 1.0 x 0.5 × 0.5 mm • NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz

Contextual Info: Ordering number : ENN6665 2SC5699 NPN Triple Diffused Planar Silicon Transistor 2SC5699 CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).

2SC5600

Abstract: 2SC5603 marking NT
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA843TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low noise operation • 6-pin lead-less minimold package • 2 different built-in transistors (2SC5603, 2SC5600)

2SC5435

Abstract: 2SC5600 IC 14558 5mA25
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: Built-in high-gain transistor

cs1m

Contextual Info: Ordering number:ENN6467 NPN Triple Diffused Planar Silicon Transistor 2SC5639 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).

2sc5609

Abstract: 2sc5609 transistor 2SA2021
Contextual Info: Transistors 2SA2021 Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SC5609 0.10+0.05 –0.02 0.33+0.05 –0.02 0.15 min. 5˚ • Features 1.20±0.05 0.80±0.05 3 1 0.23+0.05 –0.02 2 0.15 min. • High foward current transfer ratio hFE

sc 6038

Abstract: 2SC5636 transistor 3669 A 4503 ic 1346 transistor making 528
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5636 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5636 is a super mini package resin sealed silicon NPN epitaxial transistor.It is designed for high frequency application.

2SC5600

Abstract: 2SC5737 IC 14558 IC 2801 UPA858TD-T3
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA858TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • 2 different built-in transistors (2SC5737, 2SC5600) Q1: Built-in low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

TA-2891

Abstract: 2sc5682 ENN6608a
Contextual Info: Ordering number : ENN6608A 2SC5682 NPN Triple Diffused Planar Silicon Transistor 2SC5682 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1500V .

Contextual Info: Ordering number : ENN6663A NPN Triple Diffused Planar Silicon Transistor 2SC5696 Color TV Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage VCBO= 1600V . • High reliability(Adoption of HVP process). • Adoption o f M BIT process.

Contextual Info: Ordering number : ENN6652 NPN Triple Diffused Planar Silicon Transistor 2SC5680 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO= 1500V . High reliability(Adoption of HVP process).

Contextual Info: Ordering number:ENN6403 NPN Epitaxial Planar Silicon Transistor 2SC5607 DC/DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2033A_ Features • Adoption of MBIT processes.

2SC5624

Contextual Info: 2SC5624 Silicon NPN Epitaxial High Frequency Low Noise Amplifier REJ03G0129-0200Z Previous ADE-208-978(Z Rev.2.00 Oct.21.2003 Features • High gain bandwidth product fT = 28 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz

2SC4043S

Abstract: 2SC5662 2SC3838K 2SC4083 2SC4726 SC-75A T106 T146 2SC4043
Contextual Info: 2SC5662 / 2SC4726 / 2SC4083 / 2SC3838K / 2SC4043S Transistors High-Frequency Amplifier Transistor 11V, 50mA, 3.2GHz 2SC5662 / 2SC4726 / 2SC4083 / 2SC3838K / 2SC4043S zExternal dimensions (Unit : mm) 1.2 0.8 1.2 0.32 0.2 0.2 (2) (3) 0.13 0to0.1 0.5 0.22 (1)

2SC5680

Abstract: 66524
Contextual Info: Ordering number : ENN6652A 2SC5680 NPN Triple Diffused Planar Silicon Transistor 2SC5680 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1500V .