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    2SC559 Search Results

    2SC559 Datasheets (32)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SC559
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF 63.17KB 1
    2SC559
    Unknown Transistor Substitution Data Book 1993 Scan PDF 34.52KB 1
    2SC559
    Unknown The Japanese Transistor Manual 1981 Scan PDF 115.82KB 2
    2SC559
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 91.12KB 1
    2SC559
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 124.63KB 1
    2SC559
    Unknown Discontinued Transistor Data Book 1975 Scan PDF 188.69KB 2
    2SC559
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 43.84KB 1
    2SC559
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 84.86KB 1
    2SC559
    Unknown Japanese Transistor Cross References (2S) Scan PDF 36.18KB 1
    2SC559
    Unknown Cross Reference Datasheet Scan PDF 37.78KB 1
    2SC5590
    Toshiba Silicon NPN Transistor Original PDF 184.92KB 5
    2SC5590
    Toshiba NPN Transistor Original PDF 302.05KB 5
    2SC5590
    Toshiba Silicon NPN triple diffused MESA type transistor for display, color TV, high speed switching applications, horizontal deflection output for high super resolution Scan PDF 225.79KB 5
    2SC5591
    Panasonic NPN Transistor Original PDF 58.14KB 2
    2SC5591
    Panasonic Silicon NPN triple diffusion mesa type Original PDF 47.89KB 1
    2SC5591
    Panasonic Silicon NPN Triple Diffusion Mesa Type Power Transistor Original PDF 49.28KB 2
    2SC5592
    Panasonic Silicon NPN epitaxial planer type Original PDF 54.63KB 3
    2SC5592
    Panasonic NPN Transistor Original PDF 59.81KB 3
    2SC5592
    Panasonic Silicon NPN epitaxial planer type Original PDF 49.58KB 2
    2SC559200L
    Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN HF 15VCEO 2.5A MINI 3P Original PDF 3
    SF Impression Pixel

    2SC559 Price and Stock

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    Panasonic Electronic Components 2SC559200L

    TRANS NPN 15V 2.5A MINI3-G1
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    DigiKey 2SC559200L Reel
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    Renesas Electronics Corporation 2SC5594XP-TL-H

    Trans RF BJT NPN 4.5V 0.035A 100mW 4-Pin(3+Tab) SOT-343 T/R
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    Verical 2SC5594XP-TL-H 33,000 408
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    Rochester Electronics 2SC5594XP-TL-H 33,000 1
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    • 100 $0.74
    • 1000 $0.61
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    Renesas Electronics Corporation 2SC5594XP-TL-E

    Trans RF BJT NPN 4.5V 0.035A 100mW 4-Pin(3+Tab) SOT-343 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SC5594XP-TL-E 6,000 408
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    Rochester Electronics 2SC5594XP-TL-E 6,000 1
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    Chip Stock 2SC5594XP-TL-E 20,500
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    Win Source Electronics 2SC5594XP-TL-E 17,000
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    2SC559 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    C5597

    Abstract: 2SC5597
    Contextual Info: Power Transistors 2SC5597 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector to base voltage VCBO 1 700 V Collector to emitter voltage VCES 1 700 V


    Original
    2SC5597 C5597 2SC5597 PDF

    2SC5597

    Contextual Info: Power Transistors 2SC5597 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm M Di ain sc te on na tin nc ue e/ d 10.0 (6.0) (2.0) (4.0) 20.0±0.5 • Features Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short)


    Original
    2SC5597 2SC5597 PDF

    C5597

    Abstract: 2SC5597 ic1035
    Contextual Info: Power Transistors 2SC5597 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO 1 700 V VCES 1 700 V VCEO 600 V Collector to base voltage Collector to emitter voltage


    Original
    2SC5597 C5597 2SC5597 ic1035 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5592 Silicon NPN epitaxial planar type For DC-DC converter For various driver circuits Unit: mm 0.40+0.10 –0.05 (0.95) (0.95) 1.9±0.1 0.4±0.2 2.90+0.20 –0.05 • Absolute Maximum Ratings Ta = 25°C


    Original
    2002/95/EC) 2SC5592 PDF

    2SC5593

    Abstract: Hitachi DSA0014
    Contextual Info: 2SC5593 Silicon NPN Epitaxial High Frequency Low Noise Amplifier ADE-208-797 Z 1st. Edition Nov. 2000 Features • High gain bandwidth product fT = 23 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.8 dB typ. at f = 1.8 GHz Outline


    Original
    2SC5593 ADE-208-797 2SC5593 Hitachi DSA0014 PDF

    2SC5592

    Contextual Info: Transistors 2SC5592 Silicon NPN epitaxial planar type For DC-DC converter For various driver circuits Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 0.95 (0.95) 1.9±0.1 (0.65) • Low collector-emitter saturation voltage VCE(sat)


    Original
    2SC5592 2SC5592 PDF

    Contextual Info: Preliminary Datasheet 2SC5594 R07DS0278EJ0300 Previous: REJ03G0749-0200 Rev.3.00 Mar 28, 2011 Silicon NPN Epitaxial High Frequency Low Noise Amplifier Features • High gain bandwidth product fT = 24 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz


    Original
    2SC5594 R07DS0278EJ0300 REJ03G0749-0200) PTSP0004ZA-A R07DS0278EJ0300 PDF

    Contextual Info: Power Transistors 2SC5591 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 18.6±0.5 2.0 Solder Dip • Absolute Maximum Ratings TC = 25°C 1 700 V Collector-emitter voltage (E-B short) VCES 1 700 V Collector-emitter voltage (Base open)


    Original
    2SC5591 PDF

    Contextual Info: Power Transistors 2SC5597 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm Symbol Rating Unit Collector-base voltage Emitter open VCBO 1 700 Collector-emitter voltage (E-B short) VCES 1 700 V Collector-emitter voltage (Base open)


    Original
    2SC5597 PDF

    2SC5590

    Contextual Info: T O SH IB A 2SC5590 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5590 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS • • • High Voltage Low Saturation Voltage


    OCR Scan
    2SC5590 2SC5590 PDF

    C5591

    Abstract: 2SC5591 C5591 Transistor Horizontal
    Contextual Info: Power Transistors 2SC5591 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output • Absolute Maximum Ratings TC = 25°C 23.4 (1.2) (2.0) (4.0) 2.0±0.2 5˚ 5˚ 1.1±0.1 0.7±0.1 Collector to base voltage VCBO 1 700 V Collector to emitter voltage


    Original
    2SC5591 C5591 2SC5591 C5591 Transistor Horizontal PDF

    2SA2010

    Abstract: 2SC5592 2SA20
    Contextual Info: Transistors 2SC5592 Silicon NPN epitaxial planer type Unit: mm For DC-DC converter For various driver circuits 0.40+0.10 –0.05 1.9±0.1 1.1+0.3 –0.1 1.1+0.2 –0.1 10° 0 to 0.1 Symbol Rating Unit Collector to base voltage VCBO 15 V Collector to emitter voltage


    Original
    2SC5592 2SA2010 15nductor 2SA2010 2SC5592 2SA20 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5592 Silicon NPN epitaxial planar type For DC-DC converter For various driver circuits Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 Unit Collector-base voltage (Emitter open) VCBO


    Original
    2002/95/EC) 2SC5592 PDF

    2SC5597

    Abstract: "Rectifier Tube"
    Contextual Info: Power Transistors 2SC5597 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 1 700 V Collector-emitter voltage (E-B short)


    Original
    2SC5597 2SC5597 "Rectifier Tube" PDF

    Contextual Info: 2SC5590 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5590 HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV FOR MULTI−MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS z High Voltage Unit: mm : VCBO = 1700 V z Low Saturation Voltage


    Original
    2SC5590 2-21F2A PDF

    2SC5590

    Contextual Info: 2SC5590 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5590 HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV FOR MULTI−MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS l High Voltage Unit: mm : VCBO = 1700 V l Low Saturation Voltage


    Original
    2SC5590 2SC5590 PDF

    2SC5592

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5592 Silicon NPN epitaxial planar type For DC-DC converter For various driver circuits Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.95) (0.95)


    Original
    2002/95/EC) 2SC5592 2SC5592 PDF

    Contextual Info: TOSHIBA 2SC5590 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5590 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, CO LO R TV FOR M ULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS • • • High Voltage Low Saturation Voltage


    OCR Scan
    2SC5590 PDF

    2SC5594

    Abstract: DSA003643
    Contextual Info: 2SC5594 Silicon NPN Epitaxial High Frequency Low Noise Amplifier ADE-208-798 Z 1st. Edition Nov. 2000 Features • High gain bandwidth product fT = 24 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz Outline


    Original
    2SC5594 ADE-208-798 2SC5594 DSA003643 PDF

    2SC5592

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5592 Silicon NPN epitaxial planar type For DC-DC converter For various driver circuits Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95)


    Original
    2002/95/EC) 2SC5592 2SC5592 PDF

    2SC5591

    Contextual Info: Power Transistors 2SC5591 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 M Di ain sc te on na tin nc ue e/ d φ 3.2±0.1 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Base current Collector current


    Original
    2SC5591 SC-94 2SC5591 PDF

    2SC5594

    Abstract: 0443 IC 2SC5594XP-TL-E
    Contextual Info: 2SC5594 Silicon NPN Epitaxial High Frequency Low Noise Amplifier REJ03G0749-0200 Previous ADE-208-798 Rev.2.00 Aug.10.2005 Features • High gain bandwidth product fT = 24 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz


    Original
    2SC5594 REJ03G0749-0200 ADE-208-798) PTSP0004ZA-A 2SC5594 0443 IC 2SC5594XP-TL-E PDF

    2SC5599

    Abstract: 2SC5599-T1 marking TV transistor 2SC5599
    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5599 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin ultra super minimold package t = 0.75 mm


    Original
    2SC5599 2SC5599-T1 2SC5599 2SC5599-T1 marking TV transistor 2SC5599 PDF

    2sc 1203

    Abstract: ceg 052
    Contextual Info: 2SC5593 S ilic o n N P N E p itax ial U H F / V H F w id e b a n d am p lifier HITACHI Features • H igh Rain bandw idth produri f- = 23 G H z ty p . • H igh p o w e r gain iuid low noise figure , P G = l 8 d B l y p , N V » I 8 d B t y p . at f = 1 . 8 G H z


    OCR Scan
    2SC5593 2sc 1203 ceg 052 PDF