2SC559 Search Results

C5597

Abstract: 2SC5597
Contextual Info: Power Transistors 2SC5597 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector to base voltage VCBO 1 700 V Collector to emitter voltage VCES 1 700 V

2SC5597

Contextual Info: Power Transistors 2SC5597 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm M Di ain sc te on na tin nc ue e/ d 10.0 (6.0) (2.0) (4.0) 20.0±0.5 • Features Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short)

C5597

Abstract: 2SC5597 ic1035
Contextual Info: Power Transistors 2SC5597 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO 1 700 V VCES 1 700 V VCEO 600 V Collector to base voltage Collector to emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5592 Silicon NPN epitaxial planar type For DC-DC converter For various driver circuits Unit: mm 0.40+0.10 –0.05 (0.95) (0.95) 1.9±0.1 0.4±0.2 2.90+0.20 –0.05 • Absolute Maximum Ratings Ta = 25°C

2SC5593

Abstract: Hitachi DSA0014
Contextual Info: 2SC5593 Silicon NPN Epitaxial High Frequency Low Noise Amplifier ADE-208-797 Z 1st. Edition Nov. 2000 Features • High gain bandwidth product fT = 23 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.8 dB typ. at f = 1.8 GHz Outline

2SC5592

Contextual Info: Transistors 2SC5592 Silicon NPN epitaxial planar type For DC-DC converter For various driver circuits Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 0.95 (0.95) 1.9±0.1 (0.65) • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: Preliminary Datasheet 2SC5594 R07DS0278EJ0300 Previous: REJ03G0749-0200 Rev.3.00 Mar 28, 2011 Silicon NPN Epitaxial High Frequency Low Noise Amplifier Features • High gain bandwidth product fT = 24 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz

Contextual Info: Power Transistors 2SC5591 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 18.6±0.5 2.0 Solder Dip • Absolute Maximum Ratings TC = 25°C 1 700 V Collector-emitter voltage (E-B short) VCES 1 700 V Collector-emitter voltage (Base open)

Contextual Info: Power Transistors 2SC5597 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm Symbol Rating Unit Collector-base voltage Emitter open VCBO 1 700 Collector-emitter voltage (E-B short) VCES 1 700 V Collector-emitter voltage (Base open)

2SC5590

Contextual Info: T O SH IB A 2SC5590 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5590 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS • • • High Voltage Low Saturation Voltage

C5591

Abstract: 2SC5591 C5591 Transistor Horizontal
Contextual Info: Power Transistors 2SC5591 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output • Absolute Maximum Ratings TC = 25°C 23.4 (1.2) (2.0) (4.0) 2.0±0.2 5˚ 5˚ 1.1±0.1 0.7±0.1 Collector to base voltage VCBO 1 700 V Collector to emitter voltage

2SA2010

Abstract: 2SC5592 2SA20
Contextual Info: Transistors 2SC5592 Silicon NPN epitaxial planer type Unit: mm For DC-DC converter For various driver circuits 0.40+0.10 –0.05 1.9±0.1 1.1+0.3 –0.1 1.1+0.2 –0.1 10° 0 to 0.1 Symbol Rating Unit Collector to base voltage VCBO 15 V Collector to emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5592 Silicon NPN epitaxial planar type For DC-DC converter For various driver circuits Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 Unit Collector-base voltage (Emitter open) VCBO

2SC5597

Abstract: "Rectifier Tube"
Contextual Info: Power Transistors 2SC5597 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 1 700 V Collector-emitter voltage (E-B short)

Contextual Info: 2SC5590 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5590 HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV FOR MULTI−MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS z High Voltage Unit: mm : VCBO = 1700 V z Low Saturation Voltage

2SC5590

Contextual Info: 2SC5590 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5590 HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV FOR MULTI−MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS l High Voltage Unit: mm : VCBO = 1700 V l Low Saturation Voltage

2SC5592

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5592 Silicon NPN epitaxial planar type For DC-DC converter For various driver circuits Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.95) (0.95)

Contextual Info: TOSHIBA 2SC5590 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5590 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, CO LO R TV FOR M ULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS • • • High Voltage Low Saturation Voltage

2SC5594

Abstract: DSA003643
Contextual Info: 2SC5594 Silicon NPN Epitaxial High Frequency Low Noise Amplifier ADE-208-798 Z 1st. Edition Nov. 2000 Features • High gain bandwidth product fT = 24 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz Outline

2SC5592

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5592 Silicon NPN epitaxial planar type For DC-DC converter For various driver circuits Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95)

2SC5591

Contextual Info: Power Transistors 2SC5591 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 M Di ain sc te on na tin nc ue e/ d φ 3.2±0.1 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Base current Collector current

2SC5594

Abstract: 0443 IC 2SC5594XP-TL-E
Contextual Info: 2SC5594 Silicon NPN Epitaxial High Frequency Low Noise Amplifier REJ03G0749-0200 Previous ADE-208-798 Rev.2.00 Aug.10.2005 Features • High gain bandwidth product fT = 24 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz

2SC5599

Abstract: 2SC5599-T1 marking TV transistor 2SC5599
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5599 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin ultra super minimold package t = 0.75 mm

2sc 1203

Abstract: ceg 052
Contextual Info: 2SC5593 S ilic o n N P N E p itax ial U H F / V H F w id e b a n d am p lifier HITACHI Features • H igh Rain bandw idth produri f- = 23 G H z ty p . • H igh p o w e r gain iuid low noise figure , P G = l 8 d B l y p , N V » I 8 d B t y p . at f = 1 . 8 G H z