2SC544 Search Results

Contextual Info: 2SC5446 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5446 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS z High Voltage Unit: mm : VCBO = 1700 V z Low Saturation Voltage : VCE sat = 3 V (Max.)

Contextual Info: 2SC5448 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output HITACHI Features • High breakdown voltage VCB0 = 1500 V • High speed switching tf = 0.15 ¡iscc typ. at fH= 64 kHz • Isolated package TO-3PFM Outline TO-3PFM 1. Base

I500V

Contextual Info: Ordering number:EN6102 NPN Triple Diffused Planar Silicon Transistor _ 2SC5444 IS A 0 O I Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions •High speed tf= 100ns typ . ■High breakdown voltage (V CBO= I500V ).

Contextual Info: Power Transistors 2SC5440 Silicon NPN triple diffusion mesa type Unit: mm • Absolute Maximum Ratings TC = 25°C 23.4 (4.5) (1.2) 5˚ 0.7±0.1 Collector to base voltage VCBO 1 500 V Collector to emitter voltage VCES 1 500 V VCEO 600 V Emitter to base voltage

C5446

Abstract: 2SC5446
Contextual Info: TOSHIBA 2SC5446 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SC5446 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV 20.5MAX. HIGH SPEED SWITCHING APPLICATIONS • • • High Voltage

2SC5440

Contextual Info: Power Transistors 2SC5440 Silicon NPN triple diffusion mesa type Unit: mm • Absolute Maximum Ratings TC = 25°C 23.4 (4.5) (1.2) 5˚ 0.7±0.1 Collector to base voltage VCBO 1 500 V Collector to emitter voltage VCES 1 500 V VCEO 600 V Emitter to base voltage

2SC5440

Contextual Info: Power Transistors 2SC5440 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 M Di ain sc te on na tin nc ue e/ d φ 3.2±0.1 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Base current Collector current

2SC5442

Abstract: 2SC5442A
Contextual Info: Power Transistors 2SC5442, 2SC5442A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm φ 3.3±0.2 5.0±0.3 3.0 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V VCES 1500

375A3

Abstract: 2SC5445
Contextual Info: 2SC5445 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5445 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS l High Voltage Unit: mm : VCBO = 1500 V l Low Saturation Voltage : VCE sat = 3 V (Max.)

2sc5448

Abstract: Hitachi DSA001650
Contextual Info: 2SC5448 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output ADE-208-577 B Z 3rd. Edition September 1997 Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec (typ.) at f H = 64 kHz • Isolated package

2SC5445

Contextual Info: 2SC5445 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5445 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit: mm DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS z High Voltage : VCBO = 1500 V z Low Saturation Voltage : VCE sat = 3 V (Max.)

2SC5444

Contextual Info: Ordering number:EN6102 NPN Triple Diffused Planar Silicon Transistor 2SC5444 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).

EN6101

Abstract: 2SC5443
Contextual Info: Ordering number:EN6101 NPN Triple Diffused Planar Silicon Transistor 2SC5443 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).

2SC5440

Contextual Info: Power Transistors 2SC5440 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm • Absolute Maximum Ratings TC = 25°C 23.4 (4.5) 26.5±0.5 (1.2) (2.0) 5˚ 5˚ 1.1±0.1 0.7±0.1 5.45±0.3 Unit Collector-base voltage (Emitter open)

Contextual Info: TOSHIBA 2SC5445 TO SH IB A TRA N SISTO R SILICON NPN TRIPLE D IFFU SED M ESA TYPE 2SC5445 H O RIZO N TAL D EFLECTIO N O U TPU T FO R SUPER HIGH RESO LU TIO N CHARACTERISTIC SYMBOL Collector Cut-off Current !CBO Emitter Cut-off Current Ie b o Colleetor-Emitter Breakdown

EN6101

Abstract: EN610-1
Contextual Info: Ordering number:EN6101 NPN Triple Diffused Planar Silicon Transistor 2SC5443 SAf/YO Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed tplOOns typ . • High breakdown voltage (VCBo=l500V ). • High reliability (Adoption of HVP process).

M1DD

Abstract: 2SC5445
Contextual Info: TOSHIBA 2SC5445 2SC5445 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV 20.5MAX. HIGH SPEED SWITCHING APPLICATIONS • • • High Voltage Low Saturation Voltage

2SC5440

Contextual Info: Power Transistors 2SC5440 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V VCES 1500 V Collector to emitter voltage VCEO 600 V Emitter to base voltage

2SC5441

Abstract: 2SC5441A
Contextual Info: Power Transistors 2SC5441, 2SC5441A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V VCES 1500 V Collector to emitter voltage VCEO 600 V Emitter to base voltage

2SC5446

Abstract: 2SC5446 equivalent
Contextual Info: 2SC5446 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5446 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS l High Voltage Unit: mm : VCBO = 1700 V l Low Saturation Voltage : VCE sat = 3 V (Max.)

2SC5440

Contextual Info: Power Transistors 2SC5440 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm Unit Collector-base voltage Emitter open VCBO 1 500 V Collector-emitter voltage (E-B short) VCES 1 500 V Collector-emitter voltage (Base open) VCEO

Contextual Info: Power Transistors 2SC5441, 2SC5441A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 3.0±0.3 Symbol Ratings Unit Collector to base voltage VCBO 1500 V VCES 1500 V VCEO 600 V Emitter to base voltage VEBO 5 V Peak collector current

Contextual Info: Power Transistors 2SC5442, 2SC5442A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V VCES 1500 V Collector to emitter voltage VCEO 600 V Emitter to base voltage

2SC5445

Contextual Info: TOSHIBA 2SC5445 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SC5445 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS VCBO = 1500V VCE sat = 3V (Max.) tf (2) —0.1/¿s (Typ.)