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    2SC540 Search Results

    2SC540 Datasheets (35)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SC540
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF 63.17KB 1
    2SC540
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 116.69KB 1
    2SC540
    Unknown Transistor Substitution Data Book 1993 Scan PDF 34.5KB 1
    2SC540
    Unknown The Japanese Transistor Manual 1981 Scan PDF 115.82KB 2
    2SC540
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 91.12KB 1
    2SC540
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 124.63KB 1
    2SC540
    Unknown Discontinued Transistor Data Book 1975 Scan PDF 199.97KB 2
    2SC540
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 43.84KB 1
    2SC540
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 87.11KB 1
    2SC540
    Unknown Japanese Transistor Cross References (2S) Scan PDF 36.18KB 1
    2SC540
    Unknown Cross Reference Datasheet Scan PDF 37.78KB 1
    2SC5400
    Unknown Japanese Transistor Cross References (2S) Scan PDF 34.22KB 1
    2SC5402
    Unknown Japanese Transistor Cross References (2S) Scan PDF 34.22KB 1
    2SC5403
    Unknown Japanese Transistor Cross References (2S) Scan PDF 34.22KB 1
    2SC5404
    Toshiba Silicon NPN Transistor Original PDF 196.77KB 5
    2SC5404
    Toshiba NPN Transistor Original PDF 324.26KB 5
    2SC5404
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 43.61KB 1
    2SC5404
    Unknown Japanese Transistor Cross References (2S) Scan PDF 34.22KB 1
    2SC5404
    Toshiba Silicon NPN triple diffused MESA type transistor for horizontal deflection output for high resolution, display, color TV, high speed switching applications Scan PDF 231.75KB 5
    2SC5405
    Panasonic Silicon NPN triple diffusion planar type Original PDF 36.01KB 2

    2SC540 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC5404

    Contextual Info: Inchange Semiconductor Product Specification 2SC5404 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P H IS package ・High voltage;high speed ・Low collector saturation voltage APPLICATIONS ・Horizontal deflection output for high resolution display,color TV


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    2SC5404 64kHz 2SC5404 PDF

    Toshiba c5404

    Abstract: c5404 c5404 transistor toshiba toshiba marking code transistor C5404 c5404 transistor TRANSISTOR 2SC5404 2SC5404 2-16E3A
    Contextual Info: 2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit: mm DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE sat = 3 V (Max.)


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    2SC5404 Toshiba c5404 c5404 c5404 transistor toshiba toshiba marking code transistor C5404 c5404 transistor TRANSISTOR 2SC5404 2SC5404 2-16E3A PDF

    Contextual Info: T O S H IB A 2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV Unit in mm HIGH SPEED SWITCHING APPLICATIONS . 15.5 ±0.5 03.6±O .3 3.0 i 0.3 te High Speed tf=0.15/¿s Typ.


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    2SC5404 1500v 95MAX PDF

    Contextual Info: Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 3.0±0.3 Symbol Ratings Unit Collector to base voltage VCBO 1500 V VCES 1500 V VCEO 600 V Emitter to base voltage VEBO 5 V Peak collector current


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    2SC5406, 2SC5406A PDF

    NEC/LT 7221

    Abstract: nec 772 2SC5409 2SC5409-T1 NEC 2706
    Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5409 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • High fT 16 GHz TYP. 2.1±0.1 • High gain C E E E B PACKING STYLE 0.15 +0.1 –0 8-mm wide emboss taping, 6-pin


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    2SC5409 2SC5409-T1 NEC/LT 7221 nec 772 2SC5409 2SC5409-T1 NEC 2706 PDF

    Contextual Info: 2SC540 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)150õ I(CBO) Max. (A).10uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2SC540 Freq100M PDF

    2SC5407

    Abstract: npn vces 1700v 8a
    Contextual Info: Power Transistors 2SC5407 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V VCES 1700 V Collector to emitter voltage VCEO 600 V Emitter to base voltage VEBO


    Original
    2SC5407 64kHz, 2SC5407 npn vces 1700v 8a PDF

    2SC5408

    Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE • High fr • High gain PACKAGE DIMENSIONS in mm 17 GHzTYP. 2.1 ±0.1 „ 1.25+0.1 „ |Szie|2 = 15.5 dB TYP. @ f = 2 GHz, V ce = 2 V, Ic = 7 mA


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    2SC5408 2SC5408-T1 50-pcs 2SC5408 PDF

    Contextual Info: Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output M Di ain sc te on na tin nc ue e/ d Unit: mm 15.5±0.5 Symbol Collector to base voltage VCBO VCES Collector to emitter voltage VCEO Emitter to base voltage


    Original
    2SC5406, 2SC5406A PDF

    2SC5407

    Contextual Info: Power Transistors 2SC5407 Silicon NPN triple diffusion mesa type For horizontal deflection output M Di ain sc te on na tin nc ue e/ d Unit: mm Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V 1700 V 600 V 5 V 20 A 15 A 8 A VCES Collector to emitter voltage


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    2SC5407 2SC5407 PDF

    nec 473

    Abstract: p1209 NEC 596 nec 646 nec 1299 662 nec 731
    Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • High fT 17 GHz TYP. 2.1±0.1 • High gain C E E E 8-mm wide emboss taping, 6-pin (collector) feed hole direction


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    2SC5408 2SC5408-T1 50-pcs nec 473 p1209 NEC 596 nec 646 nec 1299 662 nec 731 PDF

    2SC5405

    Contextual Info: Power Transistors 2SC5405 Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio Unit: mm • Features ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO


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    2SC5405 breakd05 2SC5405 PDF

    2SC5404

    Contextual Info: SavantIC Semiconductor Product Specification 2SC5404 Silicon NPN Power Transistors DESCRIPTION •With TO-3P H IS package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,color TV


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    2SC5404 64kHz 2SC5404 PDF

    2SC5404

    Abstract: 2-16E3A TRANSISTOR 2SC5404
    Contextual Info: 2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS l High Voltage Unit: mm : VCBO = 1500 V l Low Saturation Voltage : VCE sat = 3 V (Max.)


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    2SC5404 2SC5404 2-16E3A TRANSISTOR 2SC5404 PDF

    Toshiba c5404

    Abstract: c5404 transistor toshiba toshiba marking code transistor C5404 c5404 c5404 transistor TRANSISTOR 2SC5404 2SC5404
    Contextual Info: 2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit: mm DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS z High Voltage : VCBO = 1500 V z Low Saturation Voltage : VCE sat = 3 V (Max.)


    Original
    2SC5404 2-16E3AHIBA Toshiba c5404 c5404 transistor toshiba toshiba marking code transistor C5404 c5404 c5404 transistor TRANSISTOR 2SC5404 2SC5404 PDF

    NEC 2706

    Abstract: nec 501 t 6229 6pin
    Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5409 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE • High fr • High gain PACKAGE DIMENSIONS in mm 16 G H zT Y P . 2.1 ± 0.1 1.25+0.1 |Szie|2 = 14 dB TYP. @ f = 2 GHz, V ce = 2 V, Ic = 20 mA


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    2SC5409 2SC5409-T1 50-pcs NEC 2706 nec 501 t 6229 6pin PDF

    Contextual Info: Power Transistors 2SC5407 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 3.0±0.3 Symbol Ratings Unit Collector to base voltage VCBO 1700 V VCES 1700 V VCEO 600 V Emitter to base voltage VEBO 5 V Peak collector current ICP


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    2SC5407 PDF

    2-16E3A

    Abstract: 2SC5404
    Contextual Info: TOSHIBA 2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS • • • • High Speed High Voltage Low Saturation Voltage


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    2SC5404 100ms 2-16E3A 2SC5404 PDF

    2SC5408

    Abstract: 2SC5408-T1 p1209
    Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • High fT 17 GHz TYP. 2.1±0.1 • High gain C E E E B PACKING STYLE 0.15 +0.1 –0 8-mm wide emboss taping, 6-pin


    Original
    2SC5408 2SC5408-T1 2SC5408 2SC5408-T1 p1209 PDF

    2SC5406

    Abstract: 2SC5406A
    Contextual Info: Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V VCES 1500 V Collector to emitter voltage VCEO 600 V Emitter to base voltage


    Original
    2SC5406, 2SC5406A 2SC5406 2SC5406 2SC5406A PDF

    TRANSISTOR 2SC5404

    Abstract: 2SC5404 2-16E3A
    Contextual Info: 2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage Unit: mm : VCBO = 1500 V Low Saturation Voltage : VCE sat = 3 V (Max.)


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    2SC5404 TRANSISTOR 2SC5404 2SC5404 2-16E3A PDF

    Contextual Info: Power Transistors 2SC5405 Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio Unit: mm M Di ain sc te on na tin nc ue e/ d • Features ● TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage


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    2SC5405 PDF

    TRANSISTOR 2SC5404

    Contextual Info: TOSHIBA 2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE <;r s a n a i HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Speed tf=0.15^s Typ. v^T5r. = iñnnv TTiVh Vnlt.n crp • •


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    2SC5404 TRANSISTOR 2SC5404 PDF

    2SC5406

    Abstract: 2SC5406A
    Contextual Info: Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output M Di ain sc te on na tin nc ue e/ d Unit: mm Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V 1500 V 600 V 5 V 20 A 14 A 8 A VCES


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    2SC5406, 2SC5406A 2SC5406 2SC5406A PDF