2SC533 Search Results

2SC5339

Abstract: IC071
Contextual Info: SavantIC Semiconductor Product Specification 2SC5339 Silicon NPN Power Transistors DESCRIPTION •With TO-3P H IS package ·High voltage ,high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for medium resolution display,color TV

2SC4536

Abstract: 2SC5337 2SC5337-T1 105dBuV P1093
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5337 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz

NEC 2561

Abstract: NEC 2561 transistor 2561 nec transistor NEC 2561 NEC 2561 h NEC D 809 F 2561 a nec NEC semiconductor 2561 nec 2561 4 pin transistor NEC D 586
Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to UHF band, which is suitable for the CATV, tele-communication, and such.

nec hf 324

Abstract: transistor NEC B 617 transistor NEC D 587 nec 2501 Le 629 341S NEC 2501 LE 737 2SC5338 transistor lc 7822 c
Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor 2SC5338 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R DESCRIPTION The 2SC5338 is designed for a low distortion and low noise RF am plifier with an operation on the low supply

nec 2561

Abstract: NEC 2561 transistor 2561 nec 2561 a nec NEC semiconductor 2561 transistor NEC 2561 P1093 100MHZ 200MHZ 2SC3356
Contextual Info: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SC5339 Features • • • NPN Silicon Power Transistors With TO-3P H IS package High voltage, high speed switching NPN transistors Intended for use in horizontal deflection circuits of color television

Toshiba C5339

Abstract: C5339 transistor C5339 horizontal output transistor c5339 c5339 transistor 2SC5339 2-16E3A
Contextual Info: 2SC5339 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5339 HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV Unit: mm HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE sat = 5 V (Max.)

2SC5339

Contextual Info: TOSHIBA 2SC5339 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5339 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR M EDIUM RESOLUTION DISPLAY, COLOR TV 15.5 + 0-5 HIGH SPEED SWITCHING APPLICATIONS High Voltage : V q b o ~ 1500V Low Saturation Voltage

2sc5332

Contextual Info: TOSHIBA 2SC5332 TOSHIBA TRANSISTOR NPN TRIPLE DIFFUSED MESA TYPE Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV 20.5MAX. HIGH SPEED SWITCHING APPLICATIONS 0 ì . ì ± 0.2 é- • • • High Voltage Low Saturation Voltage High Speed

transistor NEC D 822 P

Abstract: transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic
Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R FEATURES • PACKAGE DIMENSIONS High gain in millimeters | S 21 | 2 = 12 dB TYP, @ f = 1 GHz, V c e = 10 V , Ic = 20 mA

2SC5331

Contextual Info: TOSHIBA 2SC5331 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5331 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV Unit in mm o 20.5MAX. High Voltage :V c B0 = 1500 V • Low Saturation Voltage : V qe sa^ = 3 V (Max.) High Speed

Toshiba C5339

Abstract: transistor C5339 C5339 horizontal output transistor c5339 c5339 transistor
Contextual Info: 2SC5339 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5339 HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV Unit: mm HIGH SPEED SWITCHING APPLICATIONS z High Voltage : VCBO = 1500 V z Low Saturation Voltage : VCE sat = 5 V (Max.)

2SC5339

Abstract: 2-16E3A
Contextual Info: TOSHIBA 2SC5339 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SC5339 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR M EDIUM RESOLUTION DISPLAY, COLOR TV 3.0 ±0.3 p- _ ^ in I O -* ' O • High Voltage : V^ b o -1500V • Low Saturation Voltage

2SC5332

Contextual Info: TOSHIBA 2SC5332 T O S H IB A TRA N SIST O R SILICON NPN TRIPLE D IFFUSED M E S A TYPE 2SC5332 Unit in mm H O RIZO N T A L DEFLECTIO N O U TPU T FOR HIGH RESO LU TIO N D ISPLA Y, C O LO R TV HIGH SPEED SW ITC H IN G A PPLIC A TIO N S , , Y o V — f s] Vo V

Contextual Info: TOSHIBA 2SC5331 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5331 Unit in mm H ORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, CO LO R TV HIGH SPEED SWITCHING APPLICATIONS • • • K°V._-rii -fl- P 1 . 5 r.'nr -i _ , o High Voltage

Contextual Info: TOSHIBA 2SC5339 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SC5339 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR M EDIUM RESOLUTION DISPLAY, COLOR TV LD p- _ O '* • • • • • High Voltage : VCBO —1500V Low Saturation Voltage : v CE(sat = 5V (Max.)

Contextual Info: TOSHIBA 2SC5332 TOSHIBA TRANSISTOR NPN TRIPLE DIFFUSED M ESA TYPE 2SC5332 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV SYMBOL v CBO v CEO v EBO ic ÏCP Ib Pc Tj Tstg [6.0 V RATING 1700 800 5 10 20 5 200 UNIT V V V 150 -5 5 -1 5 0

2SC5339

Abstract: IC071 2SC533
Contextual Info: Inchange Semiconductor Product Specification 2SC5339 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P H IS package ・High voltage ,high speed ・Low saturation voltage ・Bult-in damper diode APPLICATIONS ・Horizontal deflection output for medium

transistor NEC B 617

Abstract: nec k 3115 NEC k 3115 transistor 2SC3357 2SC5336 2SC5336-T1 4435 power ic NEC 718 P1093 NEC B 617
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5336 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • High gain: S21e = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 2 • 4-pin power minimold package with improved gain from the 2SC3357

Contextual Info: Transistor 2SC5335 Tentative Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 1.05 2.5±0.1 ±0.05 (Ta=25˚C) +0.1 0.45–0.05 2.5±0.5 Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO

2SC5331

Abstract: Transistor 5331
Contextual Info: TOSHIBA 2SC5331 T O S H IB A TRA N SIST O R SILICON NPN TRIPLE D IFFUSED M E S A TYPE 2SC5331 H O RIZO N T A L DEFLECTIO N O U TPU T FOR HIGH RESO LU TIO N Unit in mm D ISPLA Y, C O LO R TV HIGH SPEED SW ITC H IN G A PPLIC A TIO N S , Y o V — f s] Vo V - 4

2SC5339

Abstract: 2-16E3A
Contextual Info: 2SC5339 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5339 HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE sat = 5 V (Max.) High Speed

transistor s2p

Abstract: 2SC4536 2SB804-AUT1-AZ
Contextual Info: A Business Partner of Renesas Electronics Corporation. Preliminary 2SC5337 Data Sheet NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold R09DS0047EJ0300 Rev.3.00 Sep 14, 2012 FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA

2SC5333

Abstract: FM20
Contextual Info: 2SC5333 Silicon NPN Triple Diffused Planar Transistor A hFE mA V VCE=4V, IC=0.5A 30min IB 0.2 A VCE sat IC=1.0A, IB=0.2A 1.0max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.2A 10typ MHz Tj 150 °C COB VCB=10V, f=1MHz 75typ pF –55to+150 °C Tstg 1.35±0.15 1.35±0.15