2SC5096F Search Results

Contextual Info: TOSHIBA TENTATIVE 2SC5096F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5096F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. • N F = 1.8dB, |S2le |2= 7.5dB f=2GHz Unit in mm 1.6 ± 0.1 0.85 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)

2SC5096FT

Contextual Info: TOSHIBA 2SC5096FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5096FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1.2 ± 0 .0 5 Low Noise Figure, High Gain. NF=1.8dB, |S2iel2= 7.5dB f=2GHz 0.8 ± 0.05 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: T O SH IB A 2SC5096FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF = 1.8dB, |S2ie l2 = 7.5dB f=2GHz 1.2 ± 0 .0 5 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2SC5096F

Abstract: transistor ESM
Contextual Info: TOSHIBA TENTATIVE 2SC5096F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5096F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. • N F = 1.8dB, |S2le |2= 7.5dB f=2GHz Unit in mm 1.6 ± 0.1 0.85 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TO SH IB A TENTATIVE 2SC5096F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5096F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF —1.8dB, |S2lel2= 7-5dB f=2GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2SC5096FT

Contextual Info: 2SC5096FT 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5096FT 単位: mm ○ VHF~UHF 低雑音増幅用 • 雑音特性が優れています。 : NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz 絶対最大定格 (Ta = 25°C) 項

2SC5096FT

Contextual Info: 2SC5096FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

2SC5096FT

Contextual Info: 2SC5096FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

2SC5096FT

Contextual Info: TOSHIBA 2SC5096FT TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5096FT Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF=1.8dB, |S2lel2= 7.5dB f=2GHz 1.2 ± 0.05 0.8 ± 0.05 M A X IM U M RATINGS (Ta = 25°C)

cbc 547

Abstract: cbc 182 2SC5096FT 2SC5096 CB-2 equivalent
Contextual Info: 2SC5096FT SPICE2G6 model parameters 20010110 NET LIST .SUBCKT 2SC5096 1 2 3 CB 2 3 LWB 2 5 LWE 4 3 Cpe 4 6 Cpb 5 6 LC 6 1 CC 1 3 CBC 1 2 Q1 6 5 4 + AREA= 1 .MODEL NPN + IS + BF + NF + VAF + IKF + ISE + NE + BR + NR + VAR + IKR + ISC + NC + RB + IRB + RBM +

2SC5096FT

Contextual Info: 2SC5096FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol

TA4029CTC

Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Contextual Info: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8

sec 2sc5088

Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Contextual Info: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and

MT4S300T

Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
Contextual Info: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

2sc5088 horizontal transistors

Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
Contextual Info: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.

2SK3075 equivalent

Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Contextual Info: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz