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Contextual Info: TO SHIBA 2SC5091FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE ?<;r i n Q i F T Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF = l.ld B , |S 2 ie l 2 = 7dB f=lG H z 1.2 ±0.05 M A X IM U M RATINGS (Ta = 25°C)
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2SC5091FT
Abstract: toshiba M7
Contextual Info: 2SC5091FT TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5091FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F=l.ldB, |S2iel2= 7dB f=lGHz 1.2 ± 0 .0 5 0.8 ± 0.05 M A X IM U M RATINGS (Ta = 25°C)
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2SC5091FT
Abstract: TOSHIBA Semiconductor Reliability Handbook derating concept and method
Contextual Info: 2SC5091FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
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2sc5091fttoshiba semiconductor reliability handbook derating concept and method |
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mje 317 equivalent
Abstract: 2SC5091FT
Contextual Info: 2SC5091FT SPICE2G6 model parameters 20010110 NET LIST .SUBCKT 2SC5091FT CB 2 LWB 2 LWE 4 Cpe 4 Cpb 5 LC 6 CC 1 CBC 1 Q1 6 5 4 + AREA= 1 .MODEL NPN + IS + BF + NF + VAF + IKF + ISE + NE + BR + NR + VAR + IKR + ISC + NC + RB + IRB + RBM + RE + RC + XTB + EG
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2sc5091ftmje 317 equivalent |
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2SC5091FT
Abstract: toshiba M7
Contextual Info: 2SC5091FT TOSHIBA TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5091FT Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure, High Gain. N F =l.ldB , |S2lel2= 7dB f=lGHz 1.2 ± 0.05 0.8 ± 0.05 M A X IM U M RATINGS (Ta = 25°C)
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2SC5091FT
Contextual Info: 2SC5091FT 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5091FT ○ VHF~UHF 低雑音増幅用 • 単位: mm 雑音特性が優れています。 : NF = 1.1dB, |S21e|2 = 13dB f = 1 GHz 絶対最大定格 (Ta = 25°C) 項
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2SC5091FT
Contextual Info: 2SC5091FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB f = 1 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol
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2SC5091FT
Contextual Info: 2SC5091FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091FT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
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TA4029CTC
Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Contextual Info: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8
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bcj0003gbcj0003fta4029ctcta4032ft+8tb7602tumt4s300tmt4s300umt4s301tta4029tusot-24mt4s300rfm12u7x
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sec 2sc5088
Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Contextual Info: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and
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bce0003ds-167bce0003esec 2sc5088+9samsung uhf/vhf tv tuner2sc5066 datasheetrf bipolar transistortransistor 2sc50662sc5088 secmt6l04aemt4s200tau82mt6l63fs
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MT4S300T
Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
Contextual Info: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones
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bce0003fmt4s300tta4032ftmt3s111tu+7japanese 2sc transistor 2010mt4s301tta4029ctctb7602ctcmt3s111pjapanese transistor 2sc 20102sk3476
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TOSHIBA RF Power Module S-AV24
Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製
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050106dad13sk1143sk126s1255+152sc2644s-av243sk1153sk291s1256toshiba rf power module s-av24diode varicap bb 112varicap v1472sc386a2sk13103sk782sc5066v101 varicap diode1sv1492sk192
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3SK73
Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製
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050106dad13sk1143sk126s1255+132sc2644s-av243sk1153sk291s12563sk733sk121toshiba rf power module s-av243sk101s-au82vldiode varicap bb 1122sc23283sk112
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BB 505 Varicap Diode
Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
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3sk1143sk126s12552sc2644+13s-av243sk1153sk291s1256s-av26hbb 505 varicap diodev101 varicap diodevaricap v101varicap v147varicap v103replacement for 2sc5088 horizontal transistorstoshiba s-av29hzener c9v
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FET K161
Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製
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050106dad13sk1143sk126s1255+152sc2644s-av243sk1153sk291s1256fet k161transistor c2216transistor k161k161 jfetk192atransistor c2668fet k241k161 mosfettransistor c2347transistor c1923
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2sc5088 horizontal transistors
Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or
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3sk1143sk126s12552sc2644+152-av243sk1153sk291s12562-av26h2sc5088 horizontal transistorss-av362sk192 mosfet data3sk121 equivalents-av323sk121 fet2sc2879 cb linear circuitreplacement for 2sc5088 horizontal transistors3sk73equivalent transistor 2sc2509
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2sc5088 horizontal transistors
Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
Contextual Info: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.
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bce0016a3501c-0109f-935612sc5088 horizontal transistors+9equivalent 2sc26552sc58582sc5200, 2sa19432sa1930 transistor equivalent2sa1941 equivalent2sc5570zener diode smd marking code 27 4f2sc5200 audio amplifierssmd transistor h2a
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2SK3075 equivalent
Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Contextual Info: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz
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2sc50652sc50852sc50902sc5095+15mt3s06umt3s07u2sc50662sc50862sc50912sc50962sk3075 equivalent10 ghz transistor2sk3078mt3s04tmt6p03aemt6p06e3sk32024lu1transistor 2sc5066
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