2SC478 Search Results

zo 103 ma

Abstract: 2SC4784 DSA003637
Contextual Info: 2SC4784 Silicon NPN Epitaxial ADE-208-1121A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz Typ. • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline

Contextual Info: 2SC4789 Silicon NPN Triple Diffused HITACHI Application Character display horizontal deflection output Features • High speed switching time: 0.5 |_is max • High breakdown voltage, high current: VCB0 = 1500 V, Ic = 25 A • Suitable for large size CRT Display

Contextual Info: 2SC4789 Silicon NPN Triple Diffused HITACHI Application Character display horizontal deflection output Features • High speed switching time: 0.5 |is max • High breakdown voltage, high current: VCBO= 1500 V, Ic = 25 A • Suitable for large size CRT Display

Hitachi DSA002750

Contextual Info: 2SC4784 Silicon NPN Bipolar Transistor Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline CMPAK 3 1 2 1. Emitter 2. Base

Hitachi DSA002746

Contextual Info: 2SC4784 Silicon NPN Bipolar Transistor Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline CMPAK 3 1 2 1. Emitter 2. Base

Contextual Info: Transistors 2SC4787 Silicon NPN epitaxial planar type For intermediate frequency amplification Unit: mm 0.7 2.5±0.1 (0.8) (1.0) 3.5±0.1 • Features M Di ain sc te on na tin nc ue e/ d • High transition frequency fT • Satisfactory linearity of forward current transfer ratio hFE

Contextual Info: Transistor 2SC4782 Silicon NPN epitaxial planer type For high speed switching Unit: mm +0.2 2.8 –0.3 M Di ain sc te on na tin nc ue e/ d 1.45 0.95 3 +0.1 1.9±0.2 0.65±0.15 1 0.95 ● +0.2 ● 0.65±0.15 High-speed switching. Low collector to emitter saturation voltage VCE sat .

2SC4784

Abstract: DSA003768
Contextual Info: 2SC4784 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz Typ. • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector

2SC4782

Abstract: XP05555 XP5555
Contextual Info: Composite Transistors XP05555 XP5555 Silicon NPN epitaxial planer transistor Unit: mm For high speed switching 1 6 2 5 3 4 0 to 0.1 2SC4782 x 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package.

2SC4789

Contextual Info: 2SC4789 Silicon NPN Triple Diffused Application TO–3PL Character Display Horizontal Deflection Output Features • High speed switching time: 0.5 µs max • High breakdown voltage, high current: VCBO = 1500 V, IC = 25 A • Suitable for large size CRT Display

c 458 c transistor

Contextual Info: 2SC4784-Silicon NPN Bipolar Transistor Application CMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f-p = 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz 1. Emitter 2. Base 3. Collector

Contextual Info: 2SC4784 Silicon NPN Epitaxial HITACHI Application V H F / U H F w ide band am plifier Features • H igh gain bandw idth product fx = 10 G H z Typ. • H igh gain, low noise figure PG - 15.0 dB Typ, N F = 1.2 dB T yp at f = 900 M H z Outline CM PAK 4 P "’

marking L5

Abstract: 2SC4783 SC-75
Contextual Info: DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR 2SC4783 NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SC4783 is NPN silicon epitaxial transistor. 0.15 +0.1 –0.05 0.3 +0.1 –0 FEATURES • High voltage: VCEO = 50 V • Can be automatically mounted

2SC4783

Abstract: D1561 2SA1836 SC-75
Contextual Info: データ・シート シリコン・トランジスタ Silicon Transistor 2SC4783 NPN エピタキシアル形シリコン・トランジスタ 低周波増幅用 外形図 （単位：mm） 2SC4783 は，超小型ミニモールド・デバイスであり，実装

c 3866 transistor

Contextual Info: 2SC4784 Silicon NPN Bipolar Transistor HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 10 GHz typ • High gain, low noise figure PG = 15.0 dB typ. NF = 1.2 dB typ at f = 900 MHz Outline CM PAK 2 2. Base 3. Collector

2SC4787

Contextual Info: Transistor 2SC4787 Silicon NPN epitaxial planer type For intermediate frequency amplification Unit: mm 0.15 0.65 max. 14.5±0.5 ● High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. Allowing supply with the radial taping.

SC47

Contextual Info: H ITACHI 2SC4789-Silicon NPN Triple Diffused Application T O -3P L Character Display Horizontal Deflection Output Features • High speed switching time: 0.5 |as max • High breakdown voltage, high current: V c b o ~ 1500 V, Ic = 25 A • Suitable for large size CRT Display

2SC4781

Abstract: Toshiba NOR FLASH
Contextual Info: 2SC4781 TO SH IBA TOSHIBA TRANSISTOR STOROBO FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4781 Unit in mm 5.1 MAX. MEDIUM POWER AMPLIFIER APPLICATIONS • • High DC Current Gain and Excellent hEE Linearity : hEE (i) = 200~600 (VCE = 2V, Ic = 1A)

2SC4784

Abstract: 2SC4784YA-TL-E PTSP0003ZA-A c 3866
Contextual Info: 2SC4784 Silicon NPN Epitaxial REJ03G0730-0300 Previous ADE-208-1121A Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz Typ. • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz

2SC4781

Abstract: C4781
Contextual Info: 2SC4781 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4781 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = 2 V, IC = 1 A) : hFE (2) = 300 (typ.) (VCE = 2 V, IC = 4 A)

2SC4781

Abstract: C4781
Contextual Info: 2SC4781 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4781 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = 2 V, IC = 1 A) : hFE (2) = 300 (typ.) (VCE = 2 V, IC = 4 A)

Contextual Info: SMD Type Type SMD IC Product specification 2SC4782 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 Mini type package, allowing downsizing of the equipment and automatic 0.55 Low collector to emitter saturation voltage VCE sat . +0.1 1.3-0.1 +0.1

Contextual Info: 2SC4781 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4781 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = 2 V, IC = 1 A) : hFE (2) = 300 (typ.) (VCE = 2 V, IC = 4 A)

Contextual Info: 2SC4781 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4781 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = 2 V, IC = 1 A) : hFE (2) = 300 (typ.) (VCE = 2 V, IC = 4 A)