2SC470 Search Results

Contextual Info: 2SC4707 SILICON NPN EPITAXIAL TYPE LOW FREQUENCY AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. 5.1 MAX SWITCHING APPLICATIONS. . Excellent hFE Linearity : h F E 2 = 3 5 (Min.), (VCE=2V, IC=300mA) . Complementary to 2SA1811 MAXIMUM RATINGS (Ta=25°C)

IC JRC circuits

Contextual Info: 2SC4705 No.3484 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp Applications High hpg A p p licatio n s • Low-frequency general-purpose amp, drivers, m uting circuits Features • High DC current gain (hpE = 800 to 3200) • Low collector-to-emitter saturation voltage : Vce (sat)S 0.5V max

2SC4706

Abstract: 2sc4706 NPN Transistor transistor 2sc4706
Contextual Info: JMnic Product Specification 2SC4706 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage switching transistor APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SC4706

Abstract: transistor 2sc4706 2sc4706 NPN Transistor
Contextual Info: SavantIC Semiconductor Product Specification 2SC4706 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage switching transistor APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base

ic nec 2051

Abstract: power supply ic 1507 nec 8039 2SC4703 NEC 2532 marking sh 2SC470-3 200MHZ 2SC4073
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4703 MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage VCE = 5 V .

2sc4707

Abstract: 2SA1811
Contextual Info: TO SH IBA 2SC4707 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4707 Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS. 5.1 MAX. DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • Excellent hjpg Linearity ; 11F E 2 - ° U uvun.;, • , ± (J — O U U I I 1 . Í V

EN3687

Abstract: 2SC4709
Contextual Info: Ordering number:EN3687 NPN Triple Diffused Planar Silicon Transistor 2SC4709 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage VCEO min=2100V . · Small Cob (Cob typ=1.3pF). · Wide ASO. · High reliability (Adoption of HVP process).

2SC4706

Abstract: transistor 2sc4706 2sc4706 NPN Transistor
Contextual Info: 2SC4706 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 100max µA VCEO 600 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 600min V 14(Pulse28) A hFE VCE=4V, IC=7A 10 to 25 IB 7 A VCE(sat) IC=7A, IB=1.4A 0.5max PC 130(Tc=25°C)

2SC4708

Contextual Info: H ITACHI 2SC4708-Silicon NPN Epitaxial High Resolution Monitor Video Output Feature TO-126 MOD • Excellent high frequency characteristics f j = 1.1 GHz typ Cob = 4.2 pF typ • High gain bandwidth product • Low collector output capacitance

Contextual Info: 2SC4702 Silicon NPN Epitaxial HITACHI Application High voltage amplifier Features • High breakdown voltage V ceo = 3 0 0 V • Small Cob Cob = 1.5 pF Typ. Outline MPAK 2 654 1. Emitter 2. Base 3. Collector 2SC4702 Absolute Maximum Ratings Ta = 25°C Item

Contextual Info: HITACHI 2SC4704-Silicon NPN Epitaxial High Frequency Amplifier Feature TO-126 MOD • Excellent high frequency characteristics fT = 300 MHz typ • High voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier

SMD TRANSISTOR MARKING BR

Abstract: MARKING SMD NPN TRANSISTOR BR 2SC4705 VEBO-15V transistor smd marking BR SMD BR 12
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4705 Features High DC current gain hFE=800 to 3200 . Low collector-to-emitter saturation voltage : VCE(sat) 0.5V max. High VEBO : VEBO 15V. Small size making it easy to provide high-density,

2SC4702

Abstract: XV SOT23
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial 2SC4702 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 VCEO = 300 V 0.4 3 High breakdown voltage 1 Cob = 1.5 pF Typ. 0.55 Small Cob 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1

2SC4699K

Abstract: 2SC4700 T247 2SC4699 T106 T107 T146 T147 T246
Contextual Info: b ' 7 > i s Z £ /Transistors 2SC4699K/2SC4700 2SC 4699K 2SC 4700 Epitaxial Planer NPN Silicon Transistor M M Z 'f For High-Speed Switching • ÿH férl'ii 0/D im ensions Unit : mm 2SC4689K to ff= 2SC4700 2 .0 ± 0 ,Z 2 .9 ± 0 .2 22ns (Typ.) • I —0.1

2SC4699

Abstract: T247
Contextual Info: 2SC4699K/2SC4700 h " 7 > y 7. $ / T ransistors O C A ^ g g Q Ii It ° ^ d r y 7 J l '7 ° b - ^ N P N y U □ > h - 7 > y * 2 2SC4700 Epitaxial Planer NPN Silicon Transistor y ^-><7 % / F o r High-Speed Switching • • 1 i i i '0 •X'i i 'V J f iT f ii E l/ D im e n s io n s U n i t : m m )

2SA1810

Abstract: 2SC4704 Hitachi 2SA Hitachi DSA00493
Contextual Info: 2SC4704 Silicon NPN Epitaxial Application High frequency amplifier Features • • • • Excellent high frequency characteristics fT = 300 MHz typ High voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ Suitable for wide band video amplifier

Contextual Info: 2SA1811 T O SH IB A 2 S A 1 811 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • Excellent hpg Linearity : h p E 2 = 35(M in.), ( V q r = Complementary to 2SC4707

Contextual Info: TOSHIBA 2SC4707 TOSHIBA TRANSISTOR SILICON IMPN EPITAXIAL TYPE mm • m m w LOW FREQUENCY AMPLIFIER APPLICATIONS. U nit in mm 5/1M A X DRIVER STAGE AMPLIFIER APPLICATIONS. • 8 .2 M A X . SWITCHING APPLICATIONS. Ex cellen t hjrg L in e a rity : hF E 2 = 35 (M in .), (V c

Contextual Info: TO SH IBA 2SC4707 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4707 LOW FREQUENCY AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • Excellent hjpg Linearity . oer ; 11F E 2 — o u • /iv/r* UV11I1.;,

Contextual Info: Preliminary Datasheet 2SC4702 R07DS0275EJ0400 Previous: REJ03G0729-0300 Rev.4.00 Mar 28, 2011 Silicon NPN Epitaxial Application High voltage amplifier Features • High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ. Outline RENESAS Package code: PLSP0003ZB-A

4214 ap

Abstract: sem 2106 2SC4703 2SC470-3 transistor NEC D 587 ic nec 2051 transistor NEC D 586
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4703 MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage V ce = 5 V . This low distortion

Hitachi DSA002755

Contextual Info: 2SC4702 Silicon NPN Epitaxial Application High voltage amplifier Features • High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ. Outline 2SC4702 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO

Contextual Info: 2SC4704 Silicon NPN Epitaxial HITACHI Application High frequency amplifier Features • • • • Excellent high frequency characteristics fT = 300 MHz typ High voltage and low output capacitance VCE0 = 200 V, Cob = 5.0 pF typ Suitable for wide band video amplifier

Contextual Info: Ordering number:EN3484 NPN Epitaxial Planar Silicon Transistor 2SC4705 Low-Frequency General-Purpose Amplifier, Applications High hFE Applications Package Dimensions • Low-frequency general-purpose amplifier, drivers, muting circuits. unit:mm 2038A [2SC4705]