2SC441 Search Results

smd transistor GY

Abstract: smd marking GY smd GY marking gy VEBO-15V MARKING SMD NPN TRANSISTOR BR 2SC4413
Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4413 Features Adoption of FBET process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Small Cob. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25

2SC3645

Contextual Info: Type No. 2SA 1257 2S A 1415 2 S A 1418 2 S A 1419 2S A 1552 2 S A 1682 2S A 1700 2S A 1740 2S A 1772 2 S A 1773 2SC3143 2SC3645 2SC 3648 2SC 3649 2SC4003 2SC4027 2SC4412 2SC 4548 2SC4597 2SC 4598 2SC4599 2SC 4600 2SC4601 2SC 4602 2SC 4615 2SC 4616 FX510 Page

30191

Abstract: 30192 2SC4412
Contextual Info: Ordering number: EN 3019 2SC4412 No.3019 NPN Triple Diffused Planar Silicon Transistor SA\YO i TV Camera Deflection, High-Voltage Driver Applications Features . High breakdown voltage Vqeo —300V • Small reverse transfer capacitance and excellent high frequency characteristic (cre: l.OpF typ)

2SC4413

Abstract: 2923 MARKING
Contextual Info: Ordering num ber: EN 2 9 2 3 No.2923 _ 2 S C 4 4 1 3 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp Applications F e a tu re s . Very small-sized package permitting the 2SC4413-applied sets to be made small and slim

2SC4418

Contextual Info: Inchange Semiconductor Product Specification 2SC4418 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base

2SC4419

Contextual Info: Inchange Semiconductor Product Specification 2SC4419 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High reliability ·High voltage ,high speed switching APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters

2SC4419

Abstract: 100C
Contextual Info: SavantIC Semiconductor Product Specification 2SC4419 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High reliability ·High voltage ,high speed switching APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters

2SC3532

Abstract: 2SC3533 2SC3082K 2SC3170 2SC4242 2SC4212 25C2335 2SC3077 2SC3531 2SC3535
Contextual Info: - M % it T y p e No. 2 SC 4 2 1 0 2SC £ Manuf. H b £ SANYO TOSHIBA = n 2SC 4212 ^ te T 2SC 4213 / M £ 2SC 4215 > 2SC 4216 ^ 2SC 4217 J = n 2SC 4218 y H & ÌH 2SC 4219 2SC2621 2SC4181 J 2SC 4221 J 2SC3425 2SC2688 ± FUJITSU ÒS te IE 2SC4400 2SC4415 2SC4178

FC51

Contextual Info: 2SC4419 IMPN = T R IP L E D IFFU SED PLAN ER T Y P E # w j± , ft ; t z j v r x f m h ig h v o lt a g e , h ig h speed s w it c h in g A ! : Outline Drawings 4.5,<w- 20 ‘ : Features High voltage, high speed switching High reliability • fc f flit t V.

Contextual Info: Ordering number: EN3790 2SC4411 PNP Epitaxial Planar Silicon Transistor SAXYO Ultrahigh-Definition CRT Display Video Output Applications Applications • Wide-band amp. Features • High fx fr= 1.2GHz typ . • High breakdown voltage (Vcbo = 100V,Vceo = 80V).

2SC4138

Abstract: 2SC4907 2SC4706 2sc3680
Contextual Info: Transistors for Switch Mode Power Supply For AC 80 to 130V input Specifications VCBO V VCEO (V) 250 200 Package IC (A) MT-25 (T0220) FM20 (T0220F) MT-100 (T03P) FM100 (T03PF) 2SC5271 5 2SC4073 2SC4418 5 2SC4662 2SC3832 2SC3890 7 2SC4130 500 400 10 2SC4138

2SC4411

Abstract: 2SC4563
Contextual Info: Ordering number:EN4728 PNP Epitaxial Planar Silicon Transistor 2SC4563 Ultrahigh-Definition CRT Display Video Output Applications Package Dimensions unit:mm 2010C [2SC4411] 10.2 3.6 4.5 5.1 2.7 1.3 18.0 15.1 • High fT : fT=1.2GHz typ. · High breakdown voltage : VCEO≥80V.

30192

Abstract: 30191 2SC4412 EN3019
Contextual Info: Ordering number:EN3019 NPN Triple Diffused Planar Silicon Transistor 2SC4412 TV Camera Deflection, High-Voltage Driver Applications Package Dimensions • High breakdown voltage VCEO≥300V . · Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.0pF typ).

2SC4410

Contextual Info: Transistors 2SC4410 Silicon NPN epitaxial planar type For UHF amplification 0.425 Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10 0.9±0.1 3 • Allowing the small current and low voltage operation • High transition frequency fT

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4410 Silicon NPN epitaxial planar type For UHF amplification (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 1.25±0.10 2.1±0.1

2SC4413

Abstract: ITR06801 ITR06802 ITR06803 ITR06804 ITR06805 ITR06806
Contextual Info: 注文コード No. N 2 9 2 3 2SC4413 No. N 2 9 2 3 30600 半導体ニューズ No.1801B（’ 91-’ 92 大信号トランジスタ Vol.2 データブック No.1801D）とさしかえてください。 2SC4413 特長 NPN エピタキシァルプレーナ形シリコントランジスタ

Contextual Info: 2SC4418 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

pa 2030a

Abstract: cp 035 sanyo NPN S2e 2SC4412 Marking transistor 3019 Transistor
Contextual Info: SA NY O S E M I C O N D U C T O R 25E D CORP 7T= 707b 0 0 Q 7 0 3 7 b T -3H 7 2SC4412 ^ N PN Triple Diffused Planar Silicon Transistor 2018 A TV Camera Deflection, High-Voltage Driver Applications D3019 F e a tu r e s . H igh breakdow n voltage (V c e o —300V)

2SC4415

Abstract: 2SC4418 2SC4398 2SC4427 2SC4393 2SC4394 2SC4396 2SC4397 2SC4399 2SC4400
Contextual Info: - 200 - W. n Ta=25T . *EP(àTc=25‘C) m % ffl iâ , , VCEO (V) 2SC4393 2SC4394 2SC4396 2SC4397 2SC4398 2SC4399 2SC4400 2SC4401 2SC4402 2SC4403 2SC4404 2SC4405 2SC4406 2SC4407 2SC4408 2SC4409 2SC4410 2SC4411 2SC4412 2SC4413 2SC4414 2SC4415 2SC4416 2SC4417

CI 7486

Abstract: OA60 YIO 98 2SC4416 KA 7905
Contextual Info: HITACHI 2SC4416 SILICON NPN EPITAXIAL UHF FREQUENCY CONVERSION, WIDE BAND AMPLIFIER o * : í¿2 jg 1,1 C 34 l i 1 3 1 ; ! P 1 -9 h 2 9 :5 ? 1 È J 1 » » H 1 Bait ? E iiw irr r., o ?, C o ltc fw ¡ft |Y|IH MPAK) M AXIMUM COLLECTOR DISSIPATION CURVE • ABSOLUTE M AXIM UM RATINGS (Ta=25’ C)

2SA1683

Abstract: EN3012
Contextual Info: Ordering number:EN3012 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO>80V.

2SC4418

Contextual Info: SavantIC Semiconductor Product Specification 2SC4418 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base

Contextual Info: Panasonic Transistor 2SC4417 Silicon NPN epitaxial planer type For interm adiate freq ue n cy am plification of T V image • Unit: mm 0.425 Features • High transition frequency fT. • Satisfactory linearity of forward current transfer ratio hFE. • S-Mini type package, allowing downsizing of the equipment and

2SC4419

Abstract: 2sc4419 transistor
Contextual Info: 2SC4419 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3P Features High voltage,High speed switching High reliability Applications Switching regulators Ultrasonic generators High frequency inverters