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    2SC3668 Search Results

    2SC3668 Datasheets (19)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SC3668
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 82.51KB 1
    2SC3668
    Unknown Japanese Transistor Cross References (2S) Scan PDF 32.55KB 1
    2SC3668
    Unknown The Transistor Manual (Japanese) 1993 Scan PDF 89.6KB 2
    2SC3668
    Unknown Transistor Substitution Data Book 1993 Scan PDF 34.34KB 1
    2SC3668
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 45.08KB 1
    2SC3668
    Toshiba Silicon NPN transistor for power amplifier and power switching applications Scan PDF 220.01KB 5
    2SC3668
    Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF 204.67KB 4
    2SC3668
    Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF 219.97KB 5
    2SC3668-O
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 82.51KB 1
    2SC3668O
    Toshiba Silicon NPN Epitaxial Transistor Scan PDF 128.61KB 4
    2SC3668-O
    Toshiba Power Amp Apps Scan PDF 220.01KB 5
    2SC3668-O,T2CLAF(J
    Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 50V SC71 Original PDF 165.96KB
    2SC3668-Y
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 82.51KB 1
    2SC3668Y
    Toshiba Silicon NPN Epitaxial Transistor Scan PDF 128.61KB 4
    2SC3668-Y
    Toshiba Power Amp Apps Scan PDF 220.01KB 5
    2SC3668-Y,F2PANF(J
    Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 50V SC71 Original PDF 165.96KB
    2SC3668-Y,T2F(J
    Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 50V SC71 Original PDF 165.96KB
    2SC3668-Y,T2F(M
    Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 50V SC71 Original PDF 165.96KB
    2SC3668-Y,T2WNLF(J
    Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 50V SC71 Original PDF 165.96KB
    SF Impression Pixel

    2SC3668 Price and Stock

    Toshiba America Electronic Components
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SC3668-Y,T2F(J 25,600
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    2SC3668 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2-7D101A

    Abstract: 2SA1428 2SC3668
    Contextual Info: TO SH IBA 2SC3668 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3668 Unit in mm POWER SWITCHING APPLICATIONS 7.1 M A X • • • Low Saturation Voltage : V c e (sat)“ 0.5V (Max.) High Speed Switching Time : tgtg^l.O/^siTyp.)


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    2sc36682sa14282-7d101a PDF

    2SC3668

    Contextual Info: 2SC3668 SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm POWER AMPLIFIER APPLICATIONS. 7.1MAX POWER SWITCHING APPLICATIONS. • Low Saturation Voltage : vCE(Sat)“°-5V (Max.) (Ic=lA) • High Speed Switching Time: Tst;g=1.0ys (Typ.) • Complementary to 2SA1428.


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    2sc36682sa1428ta-25 PDF

    transistor c3668

    Abstract: c3668 2SC3668 2-7D101A 2SA1428
    Contextual Info: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW


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    2sc36682sa1428transistor c3668c3668+12-7d101a PDF

    c3668

    Abstract: transistor c3668 2-7D101A 2SA1428 2SC3668
    Contextual Info: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW


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    2sc36682sa1428c3668transistor c3668+12-7d101a PDF

    2SC3668

    Contextual Info: TOSHIBA 2SC3668 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3668 U nit in mm POWER SWITCHING APPLICATIONS • Low Saturation Voltage : V(^e (sat)~ 0.5V (Max.) • High Speed Switching Time : tstg= 1.0/^s (Typ.)


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    2sc36682sa1428 PDF

    Contextual Info: 2SA1428 SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. U n it in mm POWER SWITCHING APPLICATIONS. • Low Collector S aturation Voltage : v CE(sat) = -0 .5 V (Max.) (Ic = - 1A) • H igh Speed Sw itching Time : • Complementary to 2SC3668.


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    2sa14282sc36682-7d101a PDF

    c3668

    Abstract: transistor c3668
    Contextual Info: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW


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    2sc36682sa14282-7d101ac3668+1transistor c3668 PDF

    c3668

    Abstract: 2SC3668 2-7D101A 2SA1428
    Contextual Info: 2SC3668 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3668 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • 許容コレクタ損失が大きい。 : PC = 1000 mW • スイッチング時間が速い。


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    2sc36682sa14282-7d101a20070701-ja+1c3668 PDF

    transistor c3668

    Abstract: c3668 2SA1428 transistor 2-7D101A 2SA1428 2SC3668
    Contextual Info: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW


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    2sc36682sa1428transistor c3668c3668+22sa1428 transistor2-7d101a PDF

    2SA1428

    Abstract: 2SC3668
    Contextual Info: TOSHIBA 2SC3668 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3668 PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS • • Low Saturation Voltage : Vce (sat) = 0-5V (Max.) High Speed Switching Time : tstg= 1.0/^s (Typ.) Complementary to 2SA1428.


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    2sc36682sa1428961001eaa2 PDF

    c3668

    Abstract: 2SC3668 2-7D101A 2SA1428
    Contextual Info: 2SC3668 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3668 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • 許容コレクタ損失が大きい。 : PC = 1000 mW • スイッチング時間が速い。


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    2sc36682sa14282-7d101ac3668 PDF

    2-7D101A

    Abstract: 2SA1428 2SC3668
    Contextual Info: TO SH IB A 2SC3668 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3668 PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS • Low Saturation V oltage : V q e (sat) = 0.5V (Max.) • H igh Speed S w itch in g Tim e : t stg = 1 .0/us (Typ.)


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    2sc36682sa14282-7d101a PDF

    Contextual Info: T O SH IB A 2SC3668 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3668 PO W ER AM PLIFIER APPLICATIONS Unit in mm PO W ER SWITCHING APPLICATIONS • • • Low Saturation Voltage : V q e (sat) = 0-5V(Max.) High Speed Switching Time : tstg = 1.0,«s (Typ.)


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    2sc36682sa1428 PDF

    2-7D101A

    Abstract: 2SA1428 2SC3668
    Contextual Info: TO SH IBA 2SC3668 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3668 Unit in mm POWER SWITCHING APPLICATIONS • • • Low Saturation Voltage : V c e (sat)“ 0.5V (Max.) High Speed Switching Time : tgtg^l.O/^siTyp.)


    OCR Scan
    2sc36682sa14282-7d101a PDF

    2SD2334

    Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
    Contextual Info: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187


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    2sd21742sd21752sd21762sd2177+152sd21852sd21862sd21872sd21882sd21892sd21902sd23342sc48142sd20762216y2sd15462sd19302sd17552sc25622sc4062 PDF

    NEC k 3654

    Abstract: 2SC3536 DTC124ES Hitachi 3640 DTC114ES 2SC 3674 S 2SC3738 2sc3242a 2SC3535 DTC144ES
    Contextual Info: - m € T y p e No. £ Manuf. 2SC 3 6 4 0 iE. 2SC 3 6 4 1 H 2SC 3 6 4 2 ^ & H # SANYO TOSHIBA S NEC 2SC3643 2SC3536 2SC3644 2SC3536 tL HITACHI * ± i1 FUJITSU tfi T MATSUSHITA # 2SC3535 2SC3737 H. n 2SC3536 2SC3738 2SC 3 6 4 4 J H n 2SC3536 & 2SC2880 2SC 3 6 4 6


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    2sc36432sc35362sc36442sc3535+92sc37372sc3738nec k 3654dtc124eshitachi 3640dtc114es2sc 3674 s2sc3242adtc144es PDF

    transistor A1428

    Abstract: toshiba a1428 a1428 2SA1428 transistor TOSHIBA Transistor Silicon PNP Epitaxial Type Ft 2-7D101A 2SA1428 2SC3668
    Contextual Info: 2SA1428 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1428 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High-speed switching: tstg = 1.0 µs (typ.)


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    2sa14282sc3668transistor a1428toshiba a1428+4a14282sa1428 transistortoshiba transistor silicon pnp epitaxial type ft2-7d101a PDF

    A1428

    Abstract: 2-7D101A 2SA1428 2SC3668
    Contextual Info: 2SA1428 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1428 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A)


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    2sa14282sc36682-7d101aa1428 PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    sce0004lttc41162sc4118tta1586+162sa15882sc41172sa15872sc52332sc47382sa1832gt30f131gt30f124tk18a60vsmd m5 transistor 6-pinsmd transistor h2a npngt50n322marking smd pnp transistor h2agt30j12430f124tpcp8r01 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    scj0004rsc-432sc18152sc732tm+142sc19592sa10152sc22402sa970igbt gt30f124igbt gt30j124gt30f124gt30j124gt50n322tk25e06k3tpcp8r01tk12a10k3gt30g1242sk3075 PDF

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


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    2sa11622sa11632sc18152sa1015+162sc24582sc24592sa10482sa10492sc27122sc271370h40transistor equivalent d20122sc734 equivalent3sk73 equivalent2sb5022sa776 bl2sc2075 equivalent2sk for low noise audio amplifier applications2sa970 bl equivalent2sa776 gr PDF

    2SA1428

    Abstract: 2-7D101A 2SC3668 A1428
    Contextual Info: 2SA1428 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1428 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A)


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    2sa14282sc36682-7d101a20070701-ja+1a1428 PDF

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


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    bce0016d2sc5200, 2sa19432sa1941 equivalent2sc5353 equivalent+72sc5198 equivalentamplifier circuit using 2sa1943 and 2sc52002sc2383 equivalenttpcp8l012sa1962 equivalent2sc4793 2sa18372sa1013 equivalent PDF

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


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    2sa949u50vi2ac22292sa1145u50v2sc2705+162sc22302sa817a2sc1627a2sa18112sc47072sa96515j102transistor 2sc4288atransistor 2sa 2sb 2sc 2sddrive ic 2sc33462sa 102 transistortransistor 2sa 10150j30102sc5030t15j103driver ic 2sc3346 PDF