2SC350 Search Results

2SC3507

Contextual Info: Power T ransistors 2SC3507 hTBEBiE DDlhHab Ü57 2SC3507 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching U nit : mm • Features . 15.5max. 6.9min. • High speed switching • High collector-base voltage VCbo

2SC3507

Contextual Info: Inchange Semiconductor Product Specification 2SC3507 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・High-speed switching ・High collector-base voltage VCBO ・Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS

C3503D

Abstract: 2sc3503 c3503e C3503C 2SC3503D 2SC3503F c3503-d 2sc3503 spice
Contextual Info: 2SC3503/KSC3503 NPN Epitaxial Silicon Transistor Applications • Audio, Voltage Amplifier and Current Source • CRT Display, Video Output • General Purpose Amplifier Features • • • • • • High Voltage : VCEO= 300V Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V

BC546BP

Abstract: TBC546B 2SC708 bc190 bc190b 2SC2378 SE6020 2SC980AGTM 2SC708 C BC190A
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 2N3722 SE8012 JE9100A JE9100B JE9100C BCV71 BCV71 A BCV71 A BCV71 A 2SC3504D 5 10 15 20 25 30 35 40 45 50 60 70 85 90 (Hz) Ie Max (A) 500m 500m 100m 100m 100m 100m 0.2 0.2 0.2 50m J~9100[J N~(;~lecslnc

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 21.0±0.5 16.2±0.5 • Absolute Maximum Ratings TC = 25°C

2SC3508

Abstract: ic003
Contextual Info: Power T ransistors 2SC3508 G 0 1 b 4 3 T flbb 2SC3508 Package Dimensions U nit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 5.2max. 1 5 ,5 m a x . 6.9min. High Breakdown Voltage, High Speed Switching 3.2 Epoxy resin • Features • High speed sw itching

c3503 transistor

Abstract: C3503 2SA1381 2SC3503 K70 TRANSISTOR ic 7170
Contextual Info: O rdering num ber: EN1426B 2SA1381/2SC3503 PNP/NPN Epitaxial Planar Silicon Transistor S A IiY O i High-Definition CRT Display Video Output Applications Features . High breakdown voltage: W 3 OOV. . Small reverse transfer capacitance and excellent high frequency characteristic Cre=1.8pF NPN , 2.3PF(PNP) VCB=30V.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3506 Silicon NPN triple diffusion planar type For high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 Symbol Rating Unit VCBO 1 000 V Collector-emitter voltage (E-B short)

2SC3503

Abstract: 2SA1381 ITR03346 ITR03347
Contextual Info: 注文コード No.N 1 4 2 6 B 2SA1381/2SC3503 No. N1426B 81000 半導体ニューズ No.1426A とさしかえてください。 2SA1381 / 2SC3503 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高精細度 CRT ディスプレイ , ビデオ出力用

2SC3506

Contextual Info: Power Transistors 2SC3506 Silicon NPN triple diffusion planar type For high-speed switching Unit: mm 5.0±0.2 0.7 15.0±0.3 • Features Symbol Rating Unit VCBO 1 000 V Collector-emitter voltage (E-B short) VCES 1 000 V Collector-emitter voltage (Base open)

Contextual Info: j Ordering number: EN 1438B _:_ 2SC3504 No.l438B NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display, Video Output Applications Features . High fT. . Small reverse transfer capacitance. Absolute Haxiaua Ratings at Ta=:25°C Collector to Base Voltage

2SC3507

Contextual Info: SavantIC Semiconductor Product Specification 2SC3507 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High-speed switching ·High collector-base voltage VCBO ·Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS ·For high-speed switching applications

2SC3503

Abstract: 2SA1381 ITR03346 ITR03347 ITR03348 ENN1426C
Contextual Info: Ordering number:ENN1426C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1381/2SC3503 High-Definition CRT Display, Video Output Applications Package Dimensions • High breakdown voltage : VCEO≥300V. · Small reverse transfer capacitance and excellent high

2SC3504

Contextual Info: Ordering number:EN1438B NPN Epitaxial Planar Silicon Transistor 2SC3504 High-Definition CRT Display, Video Output Applications Features Package Dimensions • High fT. · Small reverse transfer capacitance. unit:mm 2006A [2SC3504] B : Base C : Collector E : Emitter

2SC3505

Abstract: SC-65 T151 ts2-i TI31
Contextual Info: 2SC3505 ' & ± ' < T7 - Y s7 > i > * 9 impin» TRIPLE D IFFUSED PLANER TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING ' Features • ft W it » M & X 'f'y? -*'? High voltage, high speed switching • S i f i S t t High reliability : Applications • 9 Switching regulators

Contextual Info: 2SC3506 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.0k I(C) Max. (A)3 Absolute Max. Power Diss. (W)3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)1k V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)2

2SC3505

Abstract: SC-65 VCBO 700 v power transistor
Contextual Info: 2SC3505 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING ＮＰＮ三重拡散プレーナ形 高耐圧高速スイッチング用 外形寸法 : Outline Drawings 外形寸法: TO-3P 特長 ：Features 特長： 高耐圧、

2SC3505

Contextual Info: JMnic Product Specification 2SC3505 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ,high reliability ・High speed switching APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers

2SC3508

Abstract: 2SC350 2SC3506 2SC350E
Contextual Info: Power Transistors ^32052 2SC350¿ DDlb433 346 2SC3506 Silicon PNP Triple-Diffused Planar Type Package Dim ensions High Speed Switching • Features Unit ! mm 5.2.max. ^ 15-Smax. 6.9m in. • High speed switching 3.2' • High collector-base voltage Vcbo

Contextual Info: Power Transistors 2SC3506 Silicon NPN triple diffusion planar type Unit: mm For high-speed switching 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 • Features 21.0±0.5 16.2±0.5 (3.5) Solder Dip ■ Absolute Maximum Ratings TC = 25°C Parameter Rating Unit VCBO

2SC3501

Abstract: 2SC2731
Contextual Info: 2SC3501 NPN SILICON NPN EPITA XIA L + VHF AMPLIFIER VHF TV TUNER MIXER, O SCILLATO R VHF M K'ÜM mm VHF t v * í — 1. •'"<— X •’ B a s e 2. NC 3 . X • 7 ÿ : E m itte r 4 . 3 is ? 9 '• C o lle c to r D im e n sio n s in mm (FPA K) A BSO LU TE MAXIMUM RATINGS ( T a =

2SC3504

Abstract: 1438B
Contextual Info: Ordering num ber: EN 1438B N0.1438B _ 2SC3504 NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display, Video Output Applications Features . High fT . . Small reverse transfer capacitance. Absolute Maxi«um Ratings at Ta=25 C Collector to Base Voltage

2SC3502

Abstract: 2SA1380 ITR03324 ITR03325 N1425C
Contextual Info: 注文コード No.N 1 4 2 5 C 2SA1380 / 2SC3502 No. N1425C 93099 半導体ニューズ No.1425A ’ 91-’ 92 大信号トランジスタ Vol.2 データブック No.1425B とさしかえてください。 2SA1380 / 2SC3502 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ

2SC3502

Abstract: 2SA1380 ITR03324 ITR03325
Contextual Info: Ordering number:ENN1425C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1380/2SC3502 Ultrahigh-Definition CRT Display, Video Output Applications Package Dimensions • High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent