2SC347 Search Results

2SC347 Datasheets (96)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SC347	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF	71.89KB	1
2SC347	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	106.07KB	2
2SC347	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	39.42KB	1
2SC347	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	94.8KB	1
2SC347	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	120.04KB	1
2SC347	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	90.44KB	1
2SC3470	Hitachi Semiconductor	Silicon NPN Epitaxial	Original	PDF	23.34KB	5
2SC3470	Renesas Technology	Silicon NPN Epitaxial	Original	PDF	23.43KB	5
2SC3470	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	89.76KB	2
2SC3470	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	47.56KB	1
2SC3470	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	136.34KB	1
2SC3470	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	48.41KB	1
2SC3470	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	34.23KB	1
2SC3470	Unknown	Cross Reference Datasheet	Scan	PDF	37.49KB	1

2SC3470D	Hitachi Semiconductor	Silicon NPN Epitaxial	Original	PDF	21.76KB	5
2SC3470E	Hitachi Semiconductor	Silicon NPN Epitaxial	Original	PDF	21.76KB	5
2SC3470F	Hitachi Semiconductor	Silicon NPN Epitaxial	Original	PDF	21.76KB	5
2SC3471	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	47.56KB	1
2SC3471	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	136.34KB	1
2SC3471	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	48.41KB	1

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Toshiba America Electronic Components 2SC3474
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SC3474		240			1 $4.00 10 $4.00 100 $2.00 1000 $1.85 10000 $1.85	Buy Now
Renesas Electronics Corporation 2SC3478-A Small Signal Bipolar Transistor, 0.1A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	2SC3478-A		684		1	1 - 10 - 100 $0.24 1000 $0.20 10000 $0.18	Buy Now
Toshiba America Electronic Components 2SC3474TE16L SILICON NPN EPITAXIAL TYPE TRANSISTOR Small Signal Bipolar Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SC3474TE16L		2,800			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation 2SC3478A-T (Alt: 2SC3478A-T)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Asia	2SC3478A-T			18 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SC347 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SC3475 Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC3475 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. FEATURES : . Excellent Switching Times : tf=0.5tis Max. (Ic=2A) . Low Collector Saturation Voltage : VCE(sat)=0.6V(Max.) (Ic=2A)	OCR Scan	2SC3475 T0-220 2SC3475	PDF
2sc3474 Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC3474 INDUSTRIAL APPLICATIONS Unit in mm SWITCHING APPLICATIONS. SOLENOID DRIVE APPLICATIONS. &8MAX. FEATURES : . High DC Current: Gain : hFE=500 Min. (Ic=400mA) . Low Saturation Voltage: VcE(sat)=0 •5V(Max.) (Ic=300mA) 06±015	OCR Scan	2SC3474 400mA) 300mA) 100mA 2sc3474	PDF
Contextual Info: T O S H IB A 2SC3474 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3474 SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SOLENOID DRIVE APPLICATIONS • • U n it in mm High DC Current Gain : hpE = 500 Min. (Iç = 400 mA) Low Saturation Voltage : VcE (sat) = 0.5 V (Max.) (Iç = 300 mA)	OCR Scan	2SC3474 961001EAA	PDF
C3474 Abstract: 2SC3474 Contextual Info: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)	Original	2SC3474 C3474 2SC3474	PDF
2SC1345 Abstract: 2SC3470 Contextual Info: HITACHI 2SC3470 — SILICON NPN EPITAXIAL LOW FREQ UEN C Y AM PLIFIER 1. E m ititr Î . Collector J. Rsr íDim eí'.tlíw^ in n w i 2-M-J . SPA K) I ABSO LU T E MAXIMUM RATINGS (Ta25*C) Hem Symbol MAXIMUM COLLECTOR DISSIPATION CURVE 2SC3470 Unit Collector to base voltage	OCR Scan	2SC3470 2SC3470 2SC1345. 2SC1345	PDF
2Sc3478 Abstract: HP 3478A 2sc3478a PA33 Contextual Info: NPN SILICON TRANSISTORS 2SC3478, 2SC3478A DESCRIPTION The 2SC3478/3478A is designed for general-purpose applica tions requiring high Breakdown Voltages. FEATURES • High Breakdown Voltage. V CEO = 180 V /2 0 0 V 2SC3478/2SC3478A • Good hpE linearity.	OCR Scan	2SC3478, 2SC3478A 2SC3478/3478A 2SC3478/2SC3478A) 2SA1376/2SA1376A. 2SC3478/2SC3478A 2SC3478 HP 3478A 2sc3478a PA33	PDF
C3474 Abstract: 2SC3474 Contextual Info: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)	Original	2SC3474 C3474 2SC3474	PDF
pa1476h Abstract: pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH Contextual Info: CD-ROM版トランジスタ CD-ROM X13769XJ2V0CD00 08−1 トランジスタパッケージ別早見表 • TO-92形トランジスタ V TO–92 CEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674	Original	X13769XJ2V0CD00 2SA1206* 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 pa1476h pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH	PDF
2SA1444 equivalent Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent Contextual Info: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992	Original	X13769XJ2V0CD00 2SA1206 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SA1444 equivalent BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent	PDF
Contextual Info: 2SC3473 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2SC3473	PDF
2SC3474 Contextual Info: 2SC3474 SILICON NPN EPITAXIAL TYPE INDUSTRIAL APPLICATIONS Unit in a SWITCHING APPLICATIONS. SOLENOID DRIVE APPLICATIONS. S8MAX. FEATURES : . High DC Current Gain : hFE=500 Min. (Ic=400mA) . Low Saturation Voltage: VcE(sat)=0-5V(Max.)(Ic=300mA) Û 9 5M A X .	OCR Scan	2SC3474 400mA) 300mA) 2SC3474	PDF
b0239c Abstract: diode GG 66 diode 2U 66 MEAB to-53 2U 39 diode Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2N5000 2N5150 2N5602 2N5154 2N6717 92GU06 92PU06 B0379-16 ~~~~~ 30 SOT5513 SOT5513 SOT5913 B0379-25 2SC3474 2S01914 2S01981 SK3512 - :g~~:~ - 25 35 -40 45 -50 RCA1A03 S2N4863-2 S2N4863-3 SMl5509 SMl5514	Original	OT5503 OT5903 2N6409 2S01516 b0239c diode GG 66 diode 2U 66 MEAB to-53 2U 39 diode	PDF
Contextual Info: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)	Original	2SC3474	PDF
Contextual Info: 2SC3474 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2SC3474 Freq85M req85M	PDF

C3474 Abstract: 2SC3474 Contextual Info: 2SC3474 東芝トランジスタシリコンNPNエピタキシャル形 2SC3474 ○ スイッチング用 ○ ソレノイドドライブ用単位: mm • 直流電流増幅率が高い。: hFE = 500 最小 (IC = 400 mA) • コレクタ•エミッタ間飽和電圧が低い。	Original	2SC3474 20070701-JA C3474 2SC3474	PDF
Hitachi DSA0076 Abstract: 2SC1345 2SC3470 Contextual Info: 2SC3470 Silicon NPN Epitaxial ADE-208-1086 Z 1st. Edition Mar. 2001 Application Low frequency amplifier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SC3470 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO	Original	2SC3470 ADE-208-1086 Hitachi DSA0076 2SC1345 2SC3470	PDF
Contextual Info: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)	Original	2SC3474	PDF
C3474 Abstract: 2SC3474 Contextual Info: 2SC3474 東芝トランジスタシリコンNPNエピタキシャル形 2SC3474 ○ スイッチング用 ○ ソレノイドドライブ用単位: mm • 直流電流増幅率が高い。: hFE = 500 最小 (IC = 400 mA) • コレクタ•エミッタ間飽和電圧が低い。	Original	2SC3474 C3474 2SC3474	PDF
Contextual Info: 2SC3470 Silicon NPN Epitaxial HITACHI Application Low frequency am plifier Outline SPAK I 1 23 1. Emitter 2. Collector 3. Base 487 2SC3470 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VcBO 55 V Collector to emitter voltage	OCR Scan	2SC3470 2SC3470	PDF
2SC1345 Contextual Info: HITACHI 2SC3470 SILICON NPN EPITAXIAL LOW FREQ U EN C Y A M PLIFIER &SJH» D.Í5 10-1 -. JJ.X9-Á Li J l. Empier !. CöUe<w ft«c 'iüiaiei'iiiiK* ,nnvaj o a Í2.M -i SFA K • A BSO LU T E MAXIMUM RATIN G S (T*«25Ti SyMbol item MAXIMUM CO LLECTO R DISSIPATIO N	OCR Scan	2SC3470 2SC34T0 2SC1345. 2SC1345	PDF
2SD1557 Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099 Contextual Info: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m	Original	2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 2SC1674 2SC1675 2SA1005 2SA1206* 2SA988 2SD1557 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099	PDF
Contextual Info: 2SC3479 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)1.5k I(C) Max. (A)2.5 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2SC3479	PDF
Contextual Info: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)	Original	2SC3474	PDF
C3474 Abstract: 2SC3474 Contextual Info: 2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Solenoid Drive Applications Unit: mm • High DC current gain: hFE = 500 min (IC = 400 mA) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)	Original	2SC3474 C3474 2SC3474	PDF

2SC347 Search Results

2SC347 Datasheets (96)

2SC347 Price and Stock

Toshiba America Electronic Components 2SC3474

Renesas Electronics Corporation 2SC3478-A

Toshiba America Electronic Components 2SC3474TE16L

Renesas Electronics Corporation 2SC3478A-T

2SC347 Datasheets Context Search

2SC3475

2sc3474

C3474

2SC1345

2Sc3478

C3474

pa1476h

2SA1444 equivalent

2SC3474

b0239c

C3474

Hitachi DSA0076

C3474

2SC1345

2SD1557

C3474