2SC2655 Y Search Results

C2655 NPN Transistor

Abstract: C2655 toshiba marking code transistor 2sc2655 C2655 Y transistor C2655 BR C2655 C2655 characteristics C2655 Y 06 C2655 TRANSISTOR 2SC2655
Contextual Info: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW

2SC2655 Silicon NPN Epitaxial Type

Abstract: 2SA1020 2SC2655
Contextual Info: TO SH IBA 2SC2655 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2655 INDUSTRIAL APPLICATIONS POWER SWITCHING APPLICATIONS. • Low Saturation Voltage : VfJE (sat) “ 0.5V (Max.) (If; = lA) • High Speed Switching Time : tgtg^l.O/^s (Typ.)

2SC2655

Abstract: 2SC2655 Silicon NPN Epitaxial Type 2SA1020
Contextual Info: TOSHIBA 2SC2655 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2655 INDUSTRIAL APPLICATIONS PO W ER SWITCHING APPLICATIONS. • Low Saturation Voltage : v CE(sat) = °-5V (Max.) (Ie = lA) High Speed Switching Time : tgtg^l.O/^s (Typ.)

2SC2655 Silicon NPN Epitaxial Type

Abstract: 2SA1020 2SC2655
Contextual Info: TO SH IBA 2SC2655 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2655 5.1 MAX. POWER SWITCHING APPLICATIONS • • • Unit in mm Low Saturation Voltage : v CE(sat) = °-5V (Max.) (Ie = lA) High Speed Switching Time : tgtg^l.O/^s (Typ.)

C2655 NPN Transistor

Abstract: transistor C2655 c2655 c2655 transistor C2655 characteristics C2655 Y C2655(Y)-T 2sc2655 c2655 equivalent BR C2655
Contextual Info: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW

2SC2655

Abstract: 2SC2655 Silicon NPN Epitaxial Type transistor 2SC2655 2sc2655 y
Contextual Info: T O SH IB A 2SC2655 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2655 INDUSTRIAL APPLICATIONS POWER SWITCHING APPLICATIONS. • Low Saturation Voltage : VCE (sat) = 0.5V (Max.) (IC = 1A) High Speed Switching Time : tgtg =1.0/^s (Typ.)

C2655 NPN Transistor

Abstract: transistor C2655 C2655 C2655 Y toshiba marking code transistor 2sc2655 C2655 transistor c2655 equivalent C2655 characteristics BR C2655 C2655 Y 06
Contextual Info: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW

C2655 NPN Transistor

Abstract: C2655 transistor C2655 C2655 Y BR C2655 C2655 characteristics C2655 Y 06 c2655 transistor 2SC2655 Silicon NPN Epitaxial Type toshiba marking code transistor 2sc2655
Contextual Info: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW

equivalent 2SC2655

Abstract: 2sc2655 2SC2655 datasheet
Contextual Info: 2SC2655 2SC2655 TO-92MOD TRANSISTOR NPN FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM: 900 mW (Tamb=25℃) 3. BASE Collector current 2 A ICM: Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃

C2655

Abstract: C2655 Y 2SC2655 BR C2655 C2655 Y 06 C2655 Y.8g C2655 Y 40 C2655 y 05 2SA1020
Contextual Info: 2SC2655 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2655 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • 許容コレクタ損失が大きい。 : PC = 900 mW • スイッチング時間が速い。

c2655

Abstract: C2655 Y BR C2655 2SC2655 C2655 Y 06 C2655 BR 2sc2655 y C2655 Y 40 C2655 y 05 2SA1020
Contextual Info: 2SC2655 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2655 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • 許容コレクタ損失が大きい。 : PC = 900 mW • スイッチング時間が速い。

Contextual Info: MCC TM Micro Commercial Components 2SC2655-O 2SC2655-Y
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Halogen free available upon request by adding suffix "-HF"

2sc2655

Abstract: equivalent 2SC2655 transistor 2SC2655
Contextual Info: ST 2SC2655 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2655 TRANSISTOR NPN TO-92MOD FEATURES z Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) z High Speed Switching Time: tstg=1 s(Typ.) z Complementary to 2SA1020

2sc2655

Abstract: equivalent 2SC2655 2SA1020
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2655 TRANSISTOR NPN TO-92L FEATURES z Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) z High speed switching time: tstg=1 s(Typ.) z Complementary to 2SA1020 1.EMITTER

2sc2655

Abstract: 2SC2655 NPN Transistor equivalent 2SC2655
Contextual Info: ST 2SC2655 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS „ FEATURES * Low saturation voltage: VCE SAT = 0.5V (Max.) * High speed switching time: TSTG=1.0 s (Typ.) „ ORDERING INFORMATION Ordering Number

equivalent 2SC2655

Abstract: 2sc2655 1.5A NPN power transistor TO-92 transistor 2SC2655
Contextual Info: ST 2SC2655 TO-92 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

equivalent 2SC2655

Abstract: transistor 2SC2655 2sc2655 2SC2655 NPN Transistor 2002 TO92
Contextual Info: ST 2SC2655 TO-92 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

transistor 2SC2655

Abstract: 2sc2655 equivalent 2SC2655 2SC2655 NPN Transistor ST2SC2655 1.5A NPN power transistor TO-92
Contextual Info: ST 2SC2655 TO-92 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS  FEATURES * Low saturation voltage: VCE SAT = 0.5V (Max.) * High speed switching time: TSTG=1.0 s (Typ.)  ORDERING INFORMATION Ordering Number

Contextual Info: UTC 2SC2655 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES *Low saturation voltage VCE sat = 0.5V (Max.) *High speed switching time tstg=1.0 s (Typ.) 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

2sc2655

Abstract: 2SC2655G transistor 2SC2655 equivalent 2SC2655 2SC2655L 2SC2655L-x-AE3-R QW-R211-013 2SC2655 NPN Transistor 2SC2655-G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS „ FEATURES * Low saturation voltage: VCE SAT = 0.5V (Max.) * High speed switching time: tstg=1.0 s (Typ.) Lead-free: 2SC2655L Halogen-free: 2SC2655G

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2655 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM: 900 mW (Tamb=25℃) 3. BASE Collector current 2 A ICM: Collector-base voltage