2SC2655 SILICON NPN EPITAXIAL TYPE Search Results

2SC2655 SILICON NPN EPITAXIAL TYPE Result Highlights (5)

Part	Manufacturer	Description	Download
54L74/BCA	Rochester Electronics LLC	54L74 - Flip-Flop, D-Type, Dual - Dual marked (M38510/02105BCA)	PDF
5474/BCA	Rochester Electronics LLC	5474 - Flip-Flop, D-Type, Dual - Dual marked (M38510/00205BCA)	PDF
54F374/BRA	Rochester Electronics LLC	54F374 - Octal D-Type Flip-Flop with TRI-STATE Outputs	PDF
54175/BEA	Rochester Electronics LLC	54175 - Flip-Flop, D-Type, 4-Bit - Dual marked (M38510/01702BEA)	PDF
54F273/QSA	Rochester Electronics LLC	54F273 - Flip-Flop, D-Type, 8-Bit, Edge-Triggered, With Asynchronous Master Reset - Dual marked (5962-8855001SA)	PDF

2SC2655 SILICON NPN EPITAXIAL TYPE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SC2655 Abstract: 2SC2655 Silicon NPN Epitaxial Type 2SA1020 Contextual Info: TOSHIBA 2SC2655 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2655 INDUSTRIAL APPLICATIONS PO W ER SWITCHING APPLICATIONS. • Low Saturation Voltage : v CE(sat) = °-5V (Max.) (Ie = lA) High Speed Switching Time : tgtg^l.O/^s (Typ.)	OCR Scan	2SC2655 2SA1020. 75MAX O-92MOD 2SC2655 2SC2655 Silicon NPN Epitaxial Type 2SA1020	PDF
C2655 NPN Transistor Abstract: transistor C2655 C2655 C2655 Y toshiba marking code transistor 2sc2655 C2655 transistor c2655 equivalent C2655 characteristics BR C2655 C2655 Y 06 Contextual Info: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW	Original	2SC2655 2SA1020. C2655 NPN Transistor transistor C2655 C2655 C2655 Y toshiba marking code transistor 2sc2655 C2655 transistor c2655 equivalent C2655 characteristics BR C2655 C2655 Y 06	PDF
2SC2655 Silicon NPN Epitaxial Type Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS PO W ER AM PLIFIER APPLICATIONS. PO W ER SW ITCH IN G APPLICATIONS. • • • Low Saturation Voltage : VCE (sat) = 0-5V (Max.) (IC = 1A) High Speed Switching Time : tstg = 1.0^s (Typ.) Complementary to 2SA1020.	OCR Scan	2SA1020. 2SC2655 2SC2655 Silicon NPN Epitaxial Type	PDF

Catalog Datasheet

Type

Document Tags

PDF

2SC2655

Abstract: 2SC2655 Silicon NPN Epitaxial Type 2SA1020
Contextual Info: TOSHIBA 2SC2655 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2655 INDUSTRIAL APPLICATIONS PO W ER SWITCHING APPLICATIONS. • Low Saturation Voltage : v CE(sat) = °-5V (Max.) (Ie = lA) High Speed Switching Time : tgtg^l.O/^s (Typ.)

OCR Scan

2SC2655 2SA1020. 75MAX O-92MOD 2SC2655 2SC2655 Silicon NPN Epitaxial Type 2SA1020

PDF

C2655 NPN Transistor

Abstract: transistor C2655 C2655 C2655 Y toshiba marking code transistor 2sc2655 C2655 transistor c2655 equivalent C2655 characteristics BR C2655 C2655 Y 06
Contextual Info: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW

Original

2SC2655 2SA1020. C2655 NPN Transistor transistor C2655 C2655 C2655 Y toshiba marking code transistor 2sc2655 C2655 transistor c2655 equivalent C2655 characteristics BR C2655 C2655 Y 06

PDF

2SC2655 Silicon NPN Epitaxial Type

Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS PO W ER AM PLIFIER APPLICATIONS. PO W ER SW ITCH IN G APPLICATIONS. • • • Low Saturation Voltage : VCE (sat) = 0-5V (Max.) (IC = 1A) High Speed Switching Time : tstg = 1.0^s (Typ.) Complementary to 2SA1020.

OCR Scan

2SA1020. 2SC2655 2SC2655 Silicon NPN Epitaxial Type

PDF