2SC259 Search Results

2SC2591

Abstract: 2SC2592
Contextual Info: Inchange Semiconductor Product Specification 2SC2591 2SC2592 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1111/1112 ・Good linearity of hFE ・High VCEO APPLICATIONS ・For audio frequency, high power amplifiers application

2SC2594

Contextual Info: Inchange Semiconductor Product Specification 2SC2594 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Low saturation voltage APPLICATIONS ·AF power amplifier ·For electronic flash unit ·Converter PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SA1112

Abstract: 2Sa1111
Contextual Info: Inchange Semiconductor Product Specification 2SA1111 2SA1112 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2591/2592 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency, high power amplifiers application

2SA1110

Abstract: 2SC2590
Contextual Info: 2SA1110 P ow er T ransistors 2SA1110 Silicon PNP Epitaxial Planar Type Package Dim ensions A F Pow er Amplifier Com plem entary Pair with 2SC2590 • Features • Good linearity of DC current gain I i f e • High transition frequency (fT) • 40~60W output driver in complementary pair with 2SC2590

2SC2594

Contextual Info: SavantIC Semiconductor Product Specification 2SC2594 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Low saturation voltage APPLICATIONS ·AF power amplifier ·For electronic flash unit ·Converter PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2Sa1111

Abstract: 2SA1112
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 DESCRIPTION •With TO-220 package ·Complement to type 2SC2591/2592 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency, high power amplifiers application

2SA1111

Abstract: 2SC2591
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1111 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -150V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2591 APPLICATIONS ·Designed for audio frequency drivers and high power

2SA1110

Abstract: 2SC2590
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1110 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -120V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2590 APPLICATIONS ·Designed for audio frequency power amplifier applications.

2SA1111

Abstract: 2SA1112 2SC2591 2sc2592 fr 3702
Contextual Info: Power T ransistors 2SA1111, 2SA1112 2SA1111, 2SA1112 Silicon PNP Epitaxial Planar Type Package Dimensions ÂF Drivers, High Power Amplifiers Complementary Pair with 2SC2591, 2SC2592 •Features Unit ! mm 10.5 ± 0-5 £ 4.8max. 9.8max. 1.5max. Om U ev*’7‘ 7.6m in.

Contextual Info: 2SC2594 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)40 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)10# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain.140 h(FE) Max. Current gain.450

2SC2591

Abstract: 2sc2592 2SA1111 2SA1112 2SC2591/2592
Contextual Info: 2SC 2591, 2SC 2592 Power T ransistors 2SC2591, 2SC2592 Silicon NPN Epitaxial Planar Type P ackage Dim ensions AF Driver, High Pow er Am plifier C om plem entary Pair with 2 S A 1 111, 2 S A 1 112 Unit 1 mm 10.5 + 0.5 Oirt 9.8max., 7.6min. • Features • Very good linearity of DC current gain Iife

2SC2633

Abstract: 2SC2590 2SA1110 2SA1125 2SA1254 2SC2206 2SA111 2SA11 CC1216
Contextual Info: PANASONIC INDL/ELEK-CSEPII} h =5yV7S> ' 7SC T 3 D | bT3SflS4 3 I - 7 □□ÔûfiGfi 2 S A in o 2SA1110 y U 3 > P N P x fcf£ ¿ r i s T \s~f\s 2SC2590 fc a y y i j > • If • ■ i~ f î2 /S i P N P Epitaxial Planar Power Amplifier >) /'Complementary Pair with

high frequency transistor

Abstract: 2SC2952 2sc2592 S21E NPN silicon high frequency transistor
Contextual Info: 2SC2952 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The 2SC2592 is a High Frequency Transistor Designed for General Purpose VHF-UHF Amplifier Applications. MAXIMUM RATINGS IC 250 mA VCE 30 V PDISS 3.5 W @ TC = 25 C TJ -65 to +200 C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Powor Transistors 2SA2110 Silicon PNP epitaxial planar type For low frequency power amplification Complementary to 2SC2590 • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings Ta = 25°C

2SC2590

Abstract: 2SA1110
Contextual Info: JMnic Product Specification 2SC2590 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA1110 ・Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ・High transition frequency fT

2SA1110

Abstract: 2SC2590
Contextual Info: JMnic Product Specification 2SA1110 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC2590 ・Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ・High transition frequency fT

2SA1110

Abstract: 2SC2590
Contextual Info: Inchange Semiconductor Product Specification 2SA1110 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC2590 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT

2SA1110

Abstract: 2SC2590
Contextual Info: SavantIC Semiconductor Product Specification 2SA1110 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC2590 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT

2SC2594

Contextual Info: Power Transistors 2SC2594 Silicon NPN epitaxial planar type For low-frequency power amplification/ stroboscope/converter Unit: mm 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Low collector-emitter saturation voltage VCE sat • Satisfactory operation performances and high efficiency with a lowvoltage power supply

2SA1110

Abstract: 2SC2590
Contextual Info: Power Transistors 2SC2590 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1110 8.0+0.5 –0.1 3.2±0.2 0.75±0.1 11.0±0.5 3.05±0.1 • Excellent current IC characteristics of forward current transfer ratio

2SC2594

Contextual Info: Power Transistors 2SC2594 Silicon NPN epitaxial planar type For low-frequency power amplification/ stroboscope/converter Unit: mm 7.5+0.5 –0.1 2.9±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)

Vbe 8 V

Abstract: 2SC2594
Contextual Info: Power Transistors 2SC2594 Silicon NPN epitaxial planar type For low-frequency power amplification/ stroboscope/converter Unit: mm 7.5+0.5 –0.1 2.9±0.2 16.0±1.0 1.9±0.1 • Low collector-emitter saturation voltage VCE sat • Satisfactory operation performances and high efficiency with a lowvoltage power supply

2SC2590

Abstract: 2SA1110
Contextual Info: SavantIC Semiconductor Product Specification 2SC2590 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA1110 ·Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ·High transition frequency fT

2SA1112

Abstract: 2sc2592
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1112 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -180V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2592 APPLICATIONS ·Designed for audio frequency drivers and high power