2SC245 Search Results

2SC2458 GR

Abstract: 2SC2458 2SA1048
Contextual Info: 2SC2458 L TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Low Noise Audio Amplifier Applications • High current capability: IC = 150 mA (max) • High DC current gain: hFE = 70~700 Unit: mm • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

2SC2458

Abstract: 2SC2458 GR 2sc2458l 2SA1048
Contextual Info: 2SC2458 L シリコンNPNエピタキシャル形 (PCT方式) 東芝トランジスタ 2SC2458(L) ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 • • • • • • 単位: mm 小型パッケージでマイクロモータなどの小型機器の設計に適しています。

2SA1049

Abstract: 2SC2459 transistor 2sc2459
Contextual Info: 2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2459 Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 120 V (max) • High DC current gain: hFE = 200~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

2SC245

Contextual Info: SavantIC Semiconductor Product Specification 2SC245 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio frequency output applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter 3 Collector

transistor 2sc2459

Abstract: 2SC2459
Contextual Info: TOSHIBA 2SC2459 TO SHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2459 Unit in mm A U D IO AMPLIFIER APPLICATIONS | High Breakdown Voltage : V qeq = 120V (Min.) High DC Current Gain : hpE = 200~700 Excellent hpg Linearity : hpE (Ic = 0.1mA) / hjrg (Iq = 2mA) = 0.95 (Typ.)

2SC2458-GR

Abstract: 2SC2458GR 2SC2458Y 2SC2458
Contextual Info: MCC TM Micro Commercial Components 2SC2458-Y 2SC2458-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Lead Free Finish/Rohs Compliant "P"Suffix designates

2SC2459

Contextual Info: 2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2459 Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 120 V (max) • High DC current gain: hFE = 200~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

Contextual Info: TOSHIBA 2SC2458 TOSHIBA TRANSISTOR AUDIO AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2458 U nit in mm 4.2 MAX. • High C urrent Capability : I q = 150mA (Max.) • High DC C urrent Gain hpE —70—700 • Excellent hpE Linearity :

2SC2458 GR

Abstract: 2SC2458 IC3000 2SA1048 2SA1048 GR
Contextual Info: 2SC2458 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2458 ○ 低周波増幅用 ○ AM 増幅用 • • • • • • 単位: mm 小型パッケージでマイクロモータなどの小型機器の設計に適しています。

2sc2458 equivalent

Abstract: 2SC2458
Contextual Info: ST 2SC2458 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2sa1048 transistor

Abstract: transistor 2sa1048 hFE-200 transistor PNP 2sc2458 equivalent 2SA1048 2SC2458 2SA104
Contextual Info: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.

2sa1048 transistor

Abstract: 2SA1048 2sc2458 equivalent 2SC2458
Contextual Info: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.

2SC245

Contextual Info: Inchange Semiconductor Product Specification 2SC245 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio frequency output applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter 3 Collector

2SC2459

Abstract: transistor 2sc2459 2SA1049
Contextual Info: 2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2459 Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 120 V (max) · High DC current gain: hFE = 200~700 · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

2SC2458

Abstract: 2sc2458 transistor 2sc2458 equivalent 2SA1048 transistor 2SC2458
Contextual Info: 2SC2458 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2458 Audio Amplifier Applications Unit: mm • High current capability: IC = 150 mA (max) · High DC current gain: hFE = 70~700 · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

2SC2458

Abstract: transistor 2SC2458 2SA1048
Contextual Info: TOSHIBA 2SC2458 TOSHIBA TRANSISTOR AUDIO AMPLIFIER APPLICATIONS. • • • • • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2458 Unit in mm High Current Capability : Iç; = 150mA (Max.) High DC Current Gain : hjn;E = 70—700 Excellent hjpg Linearity

2SA1049

Abstract: 2SC2459
Contextual Info: TO SH IB A 2SC2459 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2459 Unit in mm AUDIO AM PLIFIER APPLICATIONS 4.2M AX. High Breakdown Voltage : V q e q = 120V (Min.) High DC Current Gain : h j P E = 200~700 Excellent hpE Linearity : h p E ( I = 0.1mA) / h j r g ( I = 2mA) = 0.95 (Typ.)

Contextual Info: T O SH IB A 2SC2458 TOSHIBA TRANSISTOR AUDIO AMPLIFIER APPLICATIONS. • • • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2458 High Current Capability : Iç = 150mA (Max.) High DC Current Gain : h;pE = 70—700 Excellent hpE Linearity : hFE (Ic = o.lmA) 1hFE (Ic = 2mA) = 0-95 (TyP-)

2SC3378

Abstract: 25A1048
Contextual Info: —3 O IA un H CO 3» 2. MINI PACKAGE SERIES rS fc > TRANSISTOR Application NPN PNP 2SC2458 General Purpose’* v CE sat) MAX. hFE Type No. I2SA1048 VCEO •c (V) M l PC ImW) VCE ic IV )' ‘ M ) (V) fjT Y P (MIN.) ■c 1 >B ImA) ImA) VCE (MHz), (V) O C/>

2SC2458

Abstract: 2sc2458 equivalent 2SA1048
Contextual Info: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.

transistor 2SC2458

Abstract: 2sc2458 equivalent 2SC2458
Contextual Info: ST 2SC2458 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2sa1048 transistor

Abstract: 2sc2458 equivalent 2SA1048 2SC2458
Contextual Info: ST 2SA1048 PNP Silicon Epitaxial Planar Transistor for audio frequency amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. As complementary type the NPN transistor ST 2SC2458 is recommended.

2SC2458

Abstract: 2sa1048
Contextual Info: 2SC2458 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2458 Audio Amplifier Applications Unit: mm • High current capability: IC = 150 mA (max) • High DC current gain: hFE = 70~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)