2SC222 Search Results

Contextual Info: TOSHIBA 2SC2229 2SC2229 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm BLACK A N D W H ITE TV V ID EO OU TPU T APPLICATIONS. 5 .1 M A X . HIGH VOLTAGE SW ITCHING APPLICATIONS. DRIVER STAGE A U D IO AMPLIFIER APPLICATIONS. • • • High Breakdown Voltage : V q e O = 150V Min.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2229 TO – 92M TO – 92MOD TRANSISTOR NPN 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z High Breakdown Voltage z High Transition Frequency 2. COLLECTOR 3. EMITTER

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2229 TO – 92M TO – 92MOD TRANSISTOR NPN 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z High Breakdown Voltage z High Transition Frequency 2. COLLECTOR 3. EMITTER

2SC2223

Abstract: TC-5431B vrf 319
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR £t£CTRON DEVICE 2SC2223 HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC2223 is designed for use in small type equipments especially recom­ in m illim eters mended for Hybrid Integrated Circuit and other applications.

2SC2229

Abstract: 2SC2229 Y
Contextual Info: TO SH IBA 2SC2229 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC2229 Unit in mm BLACK AND WHITE TV VIDEO OUTPUT APPLICATIONS 5.1 MAX. HIGH VOLTAGE SWITCHING APPLICATIONS DRIVER STAGE AUDIO AMPLIFIER APPLICATIONS • • • High Breakdown Voltage : V c e o = 150V Min.

2SC2229

Abstract: c2229 2SC-2229 C2229 O 2SC2229 Y 2SC2229 0
Contextual Info: 2SC2229 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SC2229 ○ 白黒テレビ映像出力用 ○ 高耐圧スイッチング用 ○ オーディオアンプ励振段増幅用 単位: mm • 高耐圧です。 • ハイファイアンプの励振段に適します。

transistor c2229

Abstract: c2229 c2229 transistor C2229 NPN Transistor 2SC2229 toshiba Toshiba c2229 2sc2229
Contextual Info: 2SC2229 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC2229 Black and White TV Video Output Applications High-Voltage Switching Applications Unit: mm Driver Stage Audio Amplifier Applications • High breakdown voltage: VCEO = 150 V (min)

transistor F13

Abstract: 2SC2223 F12 MARKING 100MHZ
Contextual Info: 2SC2223 SOT-23-3L 2SC2223 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Collector current 20 mA ICM: Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range

2SA1402E

Abstract: 2SC2224 2SA1371E
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 30 i:;:'''', .U(U 2SA1407E 2SA1407F 2N2894 KF3509 2N3209 2N3209L PZT3906 RXT3906 RXT3906 2SA1404D 2SA1404E 2SA1404F 2SA1541 2SA1476 2SA964 2SC2224 BFN19 ~~~J~A 35 40 2SA795 MJ373B 2N6424 MJ3739 2N6425

c2229

Abstract: 2SC2229 2SC2229 Y 2SC-2229 C2229 O
Contextual Info: 2SC2229 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SC2229 ○ 白黒テレビ映像出力用 ○ 高耐圧スイッチング用 ○ オーディオアンプ励振段増幅用 単位: mm • 高耐圧です。 • ハイファイアンプの励振段に適します。

transistor c2229

Abstract: C2229 NPN Transistor C2229 c2229 transistor equivalent transistor c2229 2SC2229 2SC2229 Y DSA0042866
Contextual Info: 2SC2229 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC2229 Black and White TV Video Output Applications High-Voltage Switching Applications Unit: mm Driver Stage Audio Amplifier Applications • High breakdown voltage: VCEO = 150 V (min)

Contextual Info: Product specification 2SC2223 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Micro package. 1 High gain bandwidth product fT=600MHz TYP 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Cob=1.0PF TYP +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low output capacitance. 0.55 +0.1

2SC2229

Abstract: transistor 2sc2229
Contextual Info: TOSHIBA 2SC2229 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC2229 BLACK AND WHITE TV VIDEO OUTPUT APPLICATIONS. Unit in mm 5.1 M AX HIGH VOLTAGE SWITCHING APPLICATIONS. • High Breakdown Voltage 8 .2 M A X. DRIVER STAGE AUDIO AMPLIFIER APPLICATIONS.

Contextual Info: DATA SH EET NEC j/ SILICON TRANSISTOR 2 S C 2223 ELECTRON DEVICE HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION P ACKAG E DIMENSIONS The 2SC2223 is designed fo r use it smalt ty p e equipm ents especially recom- in m illim e te rs

Contextual Info: SILICON TRANSISTOR 2SC2223 HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M INI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC2223 is designed fo r use in small type equipments especially recom­ in m illim eters mended for Hybrid Integrated C ircuit and other applications.

2SC2223

Contextual Info: 2SC2223 High Frequency Amplifier NPN Silicon Epitaxial Transistor • High gain bandwidth product: PACKAGE DIMENSIONS • Low output capacitance: in m illim e te rs inches 2-5 •§ (0 098) (0 02 ) fT = 6 0 0 M H z TYP. C o b = 1 .0 p F TYP. \ 0 5 1.5 § ? ? f 0 02)

C2383

Contextual Info: Powered by 1 TO-92MOD PACKAGE S E R IE S ICminer.com Application Electronic-Library 'c Type No. NPN 2SC2229 ! PNP t j 2SA949 Audio Drive 2SC2705 j 2SA1145 TV Chroma Out 2SC3334 ! 2SA1321 1 j 0.05 0.1 TV Video Out (A) 0.05 L-SSTM v CEO (mA) 0.5/0.8 10m 1

2SC2320

Abstract: 2SC2719 2SC984A 2SC1010 2sc372 2SD300 2SC1000 2sd1111 Toshiba 2SC995 2SC4641
Contextual Info: - s « tt T y p e No. 2SC 978 h m 2 S C 979 M M S 2 S C 9 8 0 G M M 2SC 9 8 0 A 2 S C 982 2SC 983 € Manuf. TOSHIBA s m NEC $L 2SC1280 2SC4218 2SC2229 2SC2274 2SC495 2SC 991»'' M zÊ. 2SC998 2SC2329 2 S C 9 92 M S 2SC998 2SC2329 2SC 996 2SC372(G) & 2SC3620

2SC2228Y

Abstract: 2228Y vt900 MARKING .40AA pa 2030a 2SC2228A 2SC3467 60AA
Contextual Info: SANYO SEMICONDUCTOR CORP 1SE I 2SC2228A, 2228Y D I 7 tì lì ? D 7 b T - 3 |'0 ODD41S4 l3 NPN Triple Diffused Planar Silicon Transistors 2006A TV Video Output Applications 665C The 2SC2228A is designed for color TV chroma output use; and the 2SC2228Y is

transistor c2229

Abstract: c2229 c2229 transistor 2SC2229 C2229 NPN Transistor equivalent transistor c2229 2SC2229 Y
Contextual Info: 2SC2229 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC2229 Black and White TV Video Output Applications High-Voltage Switching Applications Driver Stage Audio Amplifier Applications • High breakdown voltage: VCEO = 150 V (min) •

transistor c2229

Abstract: c2229 C2229 NPN Transistor c2229 transistor equivalent transistor c2229 2SC2229 2SC2229 toshiba DSAE002239
Contextual Info: 2SC2229 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC2229 Black and White TV Video Output Applications High-Voltage Switching Applications Driver Stage Audio Amplifier Applications • High breakdown voltage: VCEO = 150 V (min) •

2SC2204

Abstract: 2SC2220 VCBo-500V AC63
Contextual Info: ~5h TOSHIBA {DISCRETE/OPTO} 909 7250 TO S HI BA DE J ciOc17aSD D0[]75Cm 5ö^ <D I S C R E T E / O P T O > f 2SC2204 2SC2220 S IL IC O N NPN T R IP L E D IF F U S E D M E S A TYPE HIGH POWER SWITCHING APPLICATIONS. HIGH FREQUENCY INVERTOR APPLICATIONS. Unit in nun

sc 1046

Abstract: 2SD350 2SC 1026 2SC1957 mitsubishi 2sc 1018 2sc943 2SD226A 2SC2036 2SD371 2SC763
Contextual Info: - 104 - m « Type No. tt € Manuf. * 2SC 1014 * 2SC 1015 — • z * 2SC 1016 * 2SC 1017 ^ * * 2SC 1018— ^ h 2SC 1021 z * 2SC 1022 = * * 2SC 1023 * 2SC 1025 * * * 2SC 1026 = .E ^ £ SANYO 2SD612 m m IC TOSHIBA HITACHI ÍL 2SC790 2SC998 2SC2221 2SC2036 s

transistor SMD f12

Abstract: f12 SMD TRANSISTOR transistor sot23 f12 smd transistor marking F12 F13 SOT23 f13 sot-23 2SC2223 F12 MARKING
Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC2223 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High gain bandwidth product fT=600MHz TYP 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Cob=1.0PF TYP +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low output capacitance.