2SC184 Search Results

2SC1847

Abstract: 2SA886
Contextual Info: JMnic Product Specification 2SC1847 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA886 ・Low collector saturation APPLICATIONS ・For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2sc1846

Abstract: 2SA0885
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0885 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SA887

Abstract: 2SC1848
Contextual Info: SavantIC Semiconductor Product Specification 2SA887 Silicon PNP Power Transistors DESCRIPTION •With TO-202 package ·Complement to type 2SC1848 APPLICATIONS ·Medium power amplifier PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-202) and symbol

2sc1846

Abstract: 2SA885
Contextual Info: SavantIC Semiconductor Product Specification 2SC1846 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA885 ·Low collector saturation APPLICATIONS ·For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter

2SC144

Abstract: 2SC2240 2SC1684 2SC1919 2sc1855 2sc763 2SC2839 2sc945 2SC1047 2SC1775A
Contextual Info: - 126 - m € T y p e No. Manuf. SANYO 3í 2 T O SHIBA B NEC B HITACHI ti S i l F U J ITSU ta t MATSUSHITA m ' h MITSUBISHI □ - A ROHM 2SC 1898 Ü3 r B $ f 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC 1899 SrBÍS 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC1845

2N3480

Abstract: 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2n4956 2SC644 S 2n3400 2SC712
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 V BR CEO hFE Ie Max A V(BR)CEO 5 Manufacturer fT (Hz) 132 135 135 135 135 144 144 150 150 150 A8T3392 2N3395 TP3565 2N4286 2SC712 MPS3565 MPS3565 2SC1849 2SC1849

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0885 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C

2SC1846

Contextual Info: Power Transistors 2SC1846 Silicon NPN epitaxial planar type Unit: mm For midium output power amplification Complementary to 2SA0885 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 • Absolute Maximum Ratings TC = 25°C 0.5±0.1 0.5±0.1 4.6±0.2 Parameter Symbol

Contextual Info: Power Transistors 2SA0885 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage

transistor et 454

Abstract: 2SC1842 JE 33 PA33 SC-43A JE 720 transistor transistor afr 46
Contextual Info: NEC j b ^ > '> 9 Silicon T ra n s is to r 2SC1842 NPN Silicon Epitaxial Transistor Audio Frequency Low Noise Amplifier $Së/FEATU RES ^ • ^ H / P A C K A G E D IM EN SIO N S 7'Jt, O fftf;X f Pt, ffl t r —7" u =J - Unit : mm ¿"COfiJg|?£Í9j4'fxít?lt>I

100 HFK

Abstract: 16Oi 2SA886 2SC1847 10 HFK
Contextual Info: _ PANASONIC IN DL /E LE K{ SE MI> 7EC D | b^32fiSM~DGG07t,S t> | ' T - 3 3 - H ‘ 2SA886 2SA886 ' > >J - I V 2SC1847 P N P 3 £ 's~f x — • ^ •J fé /S i P N P E p ita x ia l P la n a r Pow er Amplifier 'J > V 2 >J /'C om plem entary Pair with 2SC1847

2SC1842

Abstract: gv 273 PA33 2sc1842 nec
Contextual Info: NEC NPN SILICON TRANSISTOR 2SC1842 DESCRIPTION The 2SC1842 is designed fo r use in an AF am plifier and general purpose. PACKAGE DIMENSIONS in m illim e te rs inches FEATURES • High h FE. 5.2M A X . h FE : 600 TYP. (V CE =6.0 V, l c = 1.0 mA) • Low Noise Voltage. NV : 30 mV T Y P ./V ce =6.0 V, lc = 1-0 m A ,\

transistor 2sc1841

Abstract: 2SC1841 PA33 to92 af power amplifier "low speed switching transistor"
Contextual Info: NEC DESCRIPTION NPN SILICON TRANSISTOR 2SC1841 The 2SC1841 is designed for use in AF amplifier, driver and low speed switching. PACKAGE DIMENSIONS in millimeters inches 5.2 MAX. FEATURES • High Voltage V CE0 : 120 V • High hFE hFE : 600 TYP. (V Ce = 6.0 V, lc = 1.0 mA)

2SA0886

Abstract: 2SA886 2SC1847
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 Unit: mm 8.0+0.5 –0.1 M Di ain sc te on na tin nc ue e/ d 3.2±0.2

2sc1846

Abstract: 2SA0885 2SA885
Contextual Info: Power Transistors 2SA0885 2SA885 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage

2SA886

Abstract: 2SC1847 2SA0886
Contextual Info: Power Transistors 2SC1847 Silicon NPN epitaxial planar type Unit: mm For midium output power amplification Complementary to 2SA0886 2SA886 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage

2SC1845

Abstract: 2sc1845 transistor transistor2sc1845
Contextual Info: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE 2SC1845 DESCRIPTIO N The 2SC1845 is the best fo r use as the m iddle range a m plifier PAC K A G E D IM EN SIO N S in H i-Fi stereo co n tro l am plifiers, power am plifiers, and etc. in millimeters inches FE A TU R E S

2sc1849

Contextual Info: 2SC1849 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)135õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SA887

Abstract: 2SC1848
Contextual Info: AOK AOK Semiconductor Product Specification 2SA887 S ilicon PNP Power Transistors DESCRIPTION • With TO-202 package • Complement to type 2SC1848 APPLICATIONS • Medium power amplifier PINNING see Fig.2 PIN DESCRIPTION Base Collector F*g.1 sim p lifie d o u tlin e (TO-202) and s y m b o l

2SA887

Abstract: 2SC1848
Contextual Info: JMnic Product Specification 2SA887 Silicon PNP Power Transistors DESCRIPTION ・With TO-202 package ・Complement to type 2SC1848 APPLICATIONS ・Medium power amplifier PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-202) and symbol

2SC1845 equivalent

Abstract: sb 0201-a 2SC1845 2sC1845 NPN 2SC1845E 2sc1845 transistor OMA 221 2SA992 X541 S400
Contextual Info: NEC m *=riXTH Aa Silicon T ra n s is to r 2SC1845 N P N i fcf ^ 41v 'T ^ U J i^ v ' y =1 > Y =7 > i> 7 .9 NPN Silicon Epitaxial Transistor Audio Frequency Low Noise Amplifier O ,14 W i 7, - f U t co ZJ > }. n — ;i, 7 > r > m ‘x & j: o p iiiW E , i t 'K & m ,

MD 202

Abstract: 2SA887 2SC1848
Contextual Info: 2SA887 2SA 887 '> I zi > P N P i 2SC1848 t 3 • # + ' > 7 J\z~7 \s t P N P E pitaxial Planar Power Amplifier >J/Complementary Pair with 2SC1848 U> iaS/Feature • 2SC1848 ¿ n > 7 ° U / 7 W output in com plem entary pair w ith 2SC1848. J Ê Î ift^ /È fê /A b s o lu te Maximum Ratings Ta —25 °C)

2SC1844

Abstract: 2SA991 PA33 2SC 991
Contextual Info: NEC NPN SILICON TRANSISTOR 2SC1844 D ESC R IP TIO N The 2SC 1844 is th e best fo r the head a m p lifie r o f tape recorders, the equalizer o f moving coil ty p e record players, and etc. P A C K A G E D IM E N S IO N S in m illim e te rs inches FEATURES

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For low-frequency power amplification Complementary to 2SC1846 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C