2SB834 TRANSISTOR Search Results

2SB834L

Abstract: utc 2sb834L 2SB834 2SB83 2sb834 transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ DESCRIPTION Low frequency power amplifier applications. Lead-Free: 2SB834L Halogen Free: 2SB834G „ ORDERING INFORMATION Normal 2SB834-x-T60-K 2SB834-x-TA3-T 2SB834-x-TF3-T

Contextual Info: 2SB834 -3A , -60V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES ITO-220J Power switching applications B N D E CLASSIFICATION OF hFE Product-Rank 2SB834-O 2SB834-Y

2SB834

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SB834 PNP SILICON TRANSISTOR H I GH V OLT AGE T RAN SI ST OR ̈ DESCRI PT I ON Low frequency power amplifier applications. Lead-Free: 2SB834L Halogen Free: 2SB834G ̈ ORDERI N G I N FORM AT I ON Normal 2SB834-x-T60-K 2SB834-x-TA3-T

2sb834

Abstract: 2sb834 transistor 2SB834 TOSHIBA 2SD880
Contextual Info: TO SH IBA 2SB834 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB834 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. • • • Low Collector Saturation Voltage : v CE(sat)= -1.0V (Max.) at IC= -3 A , IB = -0.3A Collector Power Dissipation

2SB834L

Abstract: 2SB834 utc 2sb834L 2SB83
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR „ DESCRIPTION Low frequency power amplifier applications. *Pb-free plating product number: 2SB834L „ ORDERING INFORMATION Ordering Number Normal Lead Free Plating 2SB834-x-T60-K

2sb834 transistor

Abstract: 2SB834
Contextual Info: 2SB834 2SB834 TRANSISTOR PNP TO-220 FEATURES Power dissipation PCM: 1. BASE 2. COLLECTOR 1.5 W (Tamb=25℃) 3. EMITTER Collector current ICM: -3 A Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃

UTC2SB834

Contextual Info: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified

2sd880 equivalent

Abstract: 2SD880 2sd880 datasheet 2SB834
Contextual Info: Inchange Semiconductor Product Specification 2SD880 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SB834 ·Low collector saturation voltage APPLICATIONS ·Designed for use in audio frequency power amplifier applications

2SB834

Abstract: 2SD880
Contextual Info: JMnic Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SD880 APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SB834

Abstract: 2sb834 equivalent 2sd880 equivalent 2SD880
Contextual Info: Inchange Semiconductor Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SD880 APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION 1

Contextual Info: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified

2sd880 equivalent

Abstract: 2SD880 2SB834
Contextual Info: 2SD880 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER ! TO-220 Complement to 2SB834 ABSOLUTE MAXIMUM RATINGS TA=25oC Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25oC)

2SB834

Abstract: 2SD880
Contextual Info: SavantIC Semiconductor Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·Complement to type 2SD880 APPLICATIONS ·Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter

2SD880

Abstract: 2sd880 equivalent 2SB834 416W
Contextual Info: SavantIC Semiconductor Product Specification 2SD880 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB834 ·Low collector saturation voltage APPLICATIONS ·Designed for use in audio frequency power amplifier applications

UTC2SB834

Contextual Info: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-126 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified

2SB834

Contextual Info: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified

2sd880 equivalent

Abstract: 2SB834 2SD880 2sD880 TRANSISTOR
Contextual Info: PNP 2SB834 EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD880 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation(Tc=25°C)

Contextual Info: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-126 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR  DESCRIPTION Low frequency power amplifier applications.  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB834L-x-AB3-R 2SB834G-x-AB3-R 2SB834L-x-T60-K

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low frequency power amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SB834

Abstract: 2SD880 2sb834 transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB834 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= -1.0V(Max) @IC= -3.0A ·Complement to Type 2SD880

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB834 TRANSISTOR PNP TO—220 1. BASE FEATURES z Low Collector -emitter saturation voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A z DC current Gain hFE =60-200@ IC=0.5A

utc 2sb834L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR  DESCRIPTION Low frequency power amplifier applications.  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free SOT-89 2SB834L-x-AB3-R 2SB834G-x-AB3-R

2sd880 equivalent

Abstract: 2SD880, 1.5 power dissipation 2SB834 2SD880 2sD880 TRANSISTOR
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low frequency power amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)