2SB1188 SOT89 Search Results
2SB1188 SOT89 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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transistor bc 132
Abstract: B1188 BC transistor series
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2SB1188 OT-89, SC-62 2SB1188; 2SD1766 2SB1188 transistor bc 132 B1188 BC transistor series | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1188 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES |
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2SB1188 2SB1188 OT-89 2SB1188G-x-AB3-R QW-R208-041 | |
2SB1188-R
Abstract: 2SB1188 SOT MARKING 2A
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2SB1188 OT-89 2SB1188 2SB1188-P 2SB1188-Q 2SB1188-R -200mA -500mA -500mA, 2SB1188-R SOT MARKING 2A | |
2sb1188
Abstract: 2SB1188R
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2SB1188 2SB1188-P 2SB1188-Q 2SB1188-R 30MHZ) OT-89 2SB1188R | |
2SB1188-RContextual Info: MCC TM Micro Commercial Components 2SB1188-P 2SB1188-Q 2SB1188-R omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features Lead Free Finish/RoHS Compliant "P" Suffix designates • • • |
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2SB1188-P 2SB1188-Q 2SB1188-R | |
2SB1188
Abstract: 2SB1188 SOT89
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2SB1188 OT-89 30MHz 2SB1188 2SB1188 SOT89 | |
2SB1188Contextual Info: 2SB1188 PNP Silicon Medium Power Transistor Elektronische Bauelemente SOT-89 Description The 2SB1188 is designed for medium power amplifier applications. 1 2 3 1.BASE 2.COLLECTOR 3.EMITTER Features * Low collector saturation voltage : VCE sat =-0.5V(Typ.) |
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2SB1188 OT-89 2SB1188 -50uA -200mA -500mA -500mA, 30MHz 04-Apr-2007 | |
2SB1188L-x-AB3-R
Abstract: 2sb118 2SB1188
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2SB1188 2SB1188 OT-89 2SB1188L 2SB1188G 2SB1188-x-AB3-R 2SB1188L-x-AB3-R 2SB1188G-x-AB3-R QW-R208-041 2SB1188L-x-AB3-R 2sb118 | |
2SB1188 SOT89
Abstract: 2sb118 2SB1188
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2SB1188 2SB1188 OT-89 2SB1188L 2SB1188-x-AB3-R 2SB1188L-x-AB3-R QW-R208-041 2SB1188 SOT89 2sb118 | |
2SB1188-QContextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • 2SB1188-P 2SB1188-Q 2SB1188-R PNP Plastic-Encapsulate Transistors Case Material:Molded Plastic. UL Flammability |
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2SB1188-P 2SB1188-Q 2SB1188-R | |
Contextual Info: 2 S B 1188 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1188; BC-*, where ★ is hFE code • • • 2SB1188 (MPT3) c -0.1 *0'2 4.5 1. 6 collector power dissipation, Pc = 2 W, |
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OT-89, SC-62) 2SB1188; 2SB1188 2SD1766 | |
Contextual Info: MCC TM Micro Commercial Components 2SB1188-P 2SB1188-Q 2SB1188-R omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features Lead Free Finish/RoHS Compliant "P" Suffix designates • • • |
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2SB1188-P 2SB1188-Q 2SB1188-R OT-89 | |
Contextual Info: MCC TM Micro Commercial Components 2SB1188-P 2SB1188-Q 2SB1188-R omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • PNP Plastic-Encapsulate Transistors Case Material:Molded Plastic. UL Flammability |
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2SB1188-P 2SB1188-Q 2SB1188-R | |
Contextual Info: MCC TM Micro Commercial Components 2SB1188-P 2SB1188-Q 2SB1188-R omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • PNP Plastic-Encapsulate Transistors Case Material:Molded Plastic. UL Flammability |
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2SB1188-P 2SB1188-Q 2SB1188-R | |
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Contextual Info: MCC TM Micro Commercial Components Features • • • • 2SB1188-P 2SB1188-Q 2SB1188-R omponents 20736 Marilla Street Chatsworth !"# $ % !"# PNP Plastic-Encapsulate Transistors Power dissipation: PCM = 0.5W Tamb=25ć |
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2SB1188-P 2SB1188-Q 2SB1188-R | |
2SB1188
Abstract: 2SB1188 SOT89 2SD1766
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OT-89 2SB1188 OT-89 2SD1766 30MHz 2SB1188 2SB1188 SOT89 2SD1766 | |
2SB1188
Abstract: BCR SOT89
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OT-89 2SB1188 OT-89 30MHz 2SB1188 BCR SOT89 | |
LT 500-t
Abstract: 2SB1188
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2SB1188 OT-89 100ms -50uA) OT-89 500TYP LT 500-t 2SB1188 | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors 2SB1188 SOT-89 TRANSISTOR(PNP ) FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM: -2 A Collector-base voltage 1.BASE |
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OT-89 2SB1188 OT-89-3L 500TYP 060TYP | |
2SB1188Contextual Info: Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1188 FEATURES Power dissipation PCM: 0.5 Collector current -2 ICM: Collector-base voltage V BR CBO: SOT-89 TRANSISTOR (PNP) 1. BASE W (Tamb=25℃) 2. COLLECTOR1 2 A -40 3. EMITTER |
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OT-89 2SB1188 OT-89 30MHz 2SB1188 | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1188 TRANSISTOR PNP SOT-89-3L FEATURES 1. BASE 2. COLLECTOR 1 z Low VCE(sat). z Complements the 2SD1766 2 3 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) |
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OT-89-3L 2SB1188 OT-89-3L 2SD1766 30MHz | |
2SB1188Contextual Info: 2SB1188 Epitaxial Planar PNP Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25%C Rating Symbol Limits Unit Collector-Base Voltage VCBO -40 Vdc Collector-Emitter Voltage VCEO -32 Vdc Emitter-Base Voltage VEBO -5 Vdc |
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2SB1188 OT-89 100ms -50uA) OT-89 500TYP 2SB1188 | |
PNP 200V 2A SOT89
Abstract: cj sot 89
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OT-89 2SB1188 2SD1766 060TYP M140-MH FM150-MH FM160-MH FM180-M FM1100-MH PNP 200V 2A SOT89 cj sot 89 | |
Contextual Info: 2SB1188 Epitaxial Planar PNP Transistors SOT-89 * “G” Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25%C ) Rating Symbol Limits Unit Collector-Base Voltage VCBO -40 Vdc Collector-Emitter Voltage VCEO -32 Vdc Emitter-Base Voltage |
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2SB1188 OT-89 100ms -50uA) OT-89 500TYP |