2SB0930A Search Results

2SB0930A Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SB0930A		Panasonic	PNP Transistor	Original	PDF	51.75KB	3
2SB0930A		Panasonic	Silicon PNP Epitaxial Planar Type Power Transistor	Original	PDF	48.78KB	2
2SB0930AP		Panasonic	Silicon PNP Epitaxial Planar Type Power Transistor	Original	PDF	82.28KB	3
2SB0930AQ		Panasonic	Silicon PNP Epitaxial Planar Type Power Transistor	Original	PDF	82.28KB	3

2SB0930A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0930 (2SB930), 2SB0930A (2SB930A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0930A	Original	2002/95/EC) 2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253, 2SD1253A 2SB0930	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0930 (2SB930), 2SB0930A (2SB930A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0930A	Original	2002/95/EC) 2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253, 2SD1253A 2SB0930	PDF
2SB0930 Abstract: 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0930 (2SB930), 2SB0930A (2SB930A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit	Original	2002/95/EC) 2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253, 2SD1253A 2SB0930 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0930, 2SB0930A Unit: mm Rating Unit VCBO 60 V 2SD1253A 2 80 Collector-emitter voltage 2SD1253	Original	2002/95/EC) 2SD1253, 2SD1253A 2SB0930, 2SB0930A 2SD1253	PDF
2SB0930 Abstract: 2SB0930A 2SD1253 2SD1253A Contextual Info: Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0930, 2SB0930A Unit: mm Rating Unit VCBO 60 V 2SD1253A 2 80 Collector-emitter voltage 2SD1253 Base open 2SD1253A VCEO 60 V Emitter-base voltage (Collector open)	Original	2SD1253, 2SD1253A 2SB0930, 2SB0930A 2SD1253 2SB0930 2SB0930A 2SD1253 2SD1253A	PDF
2SB0930 Abstract: 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A Contextual Info: Power Transistors 2SB0930 2SB930 , 2SB0930A (2SB930A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0930A −60 V Collector-emitter voltage 2SB0930 (Base open) 2SB0930A	Original	2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253, 2SD1253A 2SB0930 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A	PDF
2SB0930 Abstract: 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A Contextual Info: Power Transistors 2SB0930, 2SB0930A 2SB930, 2SB930A Silicon PNP epitaxial planar type 1.5±0.1 10.0±0.3 2.54±0.3 –60 –5 V ICP –8 A Collector current IC –4 A Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Symbol Collector cutoff	Original	2SB0930, 2SB0930A 2SB930, 2SB930A) 2SB0930 2SB0930 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0930, 2SB0930A Unit: mm Rating Unit VCBO 60 V 2SD1253A 2 80 Collector-emitter voltage 2SD1253	Original	2002/95/EC) 2SD1253, 2SD1253A 2SB0930, 2SB0930A 2SD1253	PDF
2SB0930 Abstract: 2SB0930A 2SD1253 2SD1253A Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0930, 2SB0930A Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit VCBO 60 V 2SD1253A	Original	2002/95/EC) 2SD1253, 2SD1253A 2SB0930, 2SB0930A 2SD1253 2SB0930 2SB0930A 2SD1253 2SD1253A	PDF
2SB0930 Abstract: 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A Contextual Info: Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB0930 2SB930 and 2SB0930A (2SB930A) 1.5±0.1 10.0±0.3 0.8±0.1 2.54±0.3 60 3.4±0.3 6.0±0.3 1.0±0.1 V 80 Emitter to base voltage	Original	2SD1253, 2SD1253A 2SB0930 2SB930) 2SB0930A 2SB930A) 2SD1253 2SB0930 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A	PDF
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE	PDF
2SC5936 Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928	PDF