2SAR544 Search Results

Contextual Info: 2SAR544P / 2SAR544D Datasheet PNP -2.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -2.5A MPT3 Collector CPT3 Base Collector Emitter Base Emitter 2SAR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR544P / 2SCR544D

T100

Abstract: 2SAR544P
Contextual Info: Midium Power Transistors -80V / -2.5A 2SAR544P  Structure PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) (1) 2) High speed switching

Contextual Info: Midium Power Transistors -80V / -2.5A 2SAR544P  Dimensions (Unit : mm)  Structure PNP Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) (1) (2) (3) 2) High speed switching

Contextual Info: Midium Power Transistors -80V / -2.5A 2SAR544D  Features 1) Low saturation voltage, typically V CE (sat) = -0.4V (Max.) (I C / I B= -1A / -50mA)  Dimensions (Unit : mm) CPT3 6.5 5.1 (SC-63) <SOT-428> 2.3 0.5 0.9 (1)  Packaging specifications Package

Contextual Info: 2SAR544P Data Sheet PNP -2.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -2.5A MPT3 Base Collector Emitter 2SAR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR544P 3) Low VCE(sat)

Contextual Info: 2SAR544R Datasheet PNP -2.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -2.5A TSMT3 Collector Base Emitter 2SAR544R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR544R 3) Low VCE(sat) VCE(sat)= -0.4V(Max.)

Contextual Info: 2SCR544P / 2SCR544D Datasheet NPN 2.5A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 2.5A MPT3 Collector CPT3 Base Collector Emitter Base Emitter 2SCR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR544P / 2SAR544D

Contextual Info: Midium Power Transistors -80V / -2.5A 2SAR544D  Features 1) Low saturation voltage, typically V CE (sat) = -0.4V (Max.) (I C / I B= -1A / -50mA)  Dimensions (Unit : mm) CPT3 6.5 5.1 (SC-63) <SOT-428> 2.3 0.5 0.9 (1)  Packaging specifications Package

2sar544r

Abstract: 2SAR544
Contextual Info: Midium Power Transistors -80V / -2.5A 2SAR544R  Structure PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm) TSMT3 1.0MAX  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) 2.9 0.85 0.4 0.7

Contextual Info: Midium Power Transistors -80V / -2.5A 2SAR544D  Features 1) Low saturation voltage, typically V CE (sat) = -0.4V (Max.) (I C / I B= -1A / -50mA)  Dimensions (Unit : mm) CPT3 6.5 5.1 (SC-63) <SOT-428> 2.3 0.5 0.9 (1)  Packaging specifications Package

Contextual Info: 2SCR544R Datasheet NPN 2.5A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 2.5A TSMT3 Collector Base Emitter 2SCR544R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR544R 3) Low VCE(sat) VCE(sat)=0.30V(Max.)

2SAR544R

Contextual Info: Midium Power Transistors -80V / -2.5A 2SAR544R  Structure PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm) TSMT3 1.0MAX  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) 2.9 0.85 0.4 0.7

Contextual Info: 2SAR544P 2SAR544PFRA Data Sheet PNP -2.5A -80V Middle Power Transistor AEC-Q101 Qualified lOutline Parameter Value VCEO IC -80V -2.5A MPT3 Base Collector Emitter 2SAR544PFRA 2SAR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR544PFRA

Contextual Info: 2SCR544P 2SCR544PFRA Data Sheet NPN 2.5A 80V Middle Power Transistor AEC-Q101 Qualified lOutline Parameter Value VCEO IC 80V 2.5A MPT3 Base Collector Emitter 2SCR544PFRA 2SCR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR544PFRA

Contextual Info: Midium Power Transistors -80V / -2.5A 2SAR544R  Structure PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm) TSMT3 1.0MAX  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) 2.9 0.85 0.4 0.7

2SC6144

Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
Contextual Info: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.