2SAR542 Search Results

Contextual Info: 2SAR542F3 Datasheet PNP -3.0A -30V Middle Power Transistor l Outline Parameter VCEO Value -30V IC -3A HUML2020L3 2SAR542F3 l Features 1 Suitable for Middle Power Driver. 2) Low V CE sat) VCE(sat)=-0.20V(Max.).

Contextual Info: Midium Power Transistors -30V / -5A 2SAR542P  Dimensions (Unit : mm)  Structure PNP Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA) (1) (2) (3) 2) High speed switching

Contextual Info: 2SCR542PFRA 2SCR542P Data Sheet NPN 5.0A 30V Middle Power Transistor AEC-Q101 Qualified lOutline Parameter Value VCEO IC 30V 5.0A MPT3 Base Collector Emitter 2SCR542PFRA 2SCR542P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR542PFRA

Contextual Info: 2SAR542P 2SAR542PFRA Data Sheet PNP -5.0A -30V Middle Power Transistor AEC-Q101 Qualified lOutline Parameter Value VCEO IC -30V -5.0A MPT3 Base Collector Emitter 2SAR542PFRA 2SAR542P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR542PFRA

Contextual Info: 2SAR542P / 2SAR542D Datasheet PNP -5.0A -30V Middle Power Transistor lOutline Parameter Value VCEO IC -30V -5.0A MPT3 Collector CPT3 Base Collector Emitter Base Emitter 2SAR542P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR542P / 2SCR542D

T100

Abstract: 2sar542p
Contextual Info: Midium Power Transistors -30V / -5A 2SAR542P  Structure PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA) (1) 2) High speed switching  Applications

Contextual Info: 2SCR542P Data Sheet NPN 5.0A 30V Middle Power Transistor lOutline Parameter Value VCEO IC 30V 5.0A MPT3 Base Collector Emitter 2SCR542P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR542P 3) Low VCE(sat) VCE(sat)=0.4V Max. (IC/IB=2A/100mA)

Contextual Info: 2SAR542P Data Sheet PNP -5.0A -30V Middle Power Transistor lOutline Parameter Value VCEO IC -30V -5.0A MPT3 Base Collector Emitter 2SAR542P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR542P 3) Low VCE(sat)

2scr542

Abstract: 2sar542
Contextual Info: 2SCR542P / 2SCR542D Datasheet NPN 5.0A 30V Middle Power Transistor lOutline Parameter Value VCEO IC 30V 5.0A MPT3 Collector CPT3 Base Collector Emitter Base Emitter 2SCR542P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR542P / 2SAR542D

2sar542

Contextual Info: Midium Power Transistors -30V / -5A 2SAR542D  Structure PNP Silicon epitaxial planar transistor  Dimensions (Unit : mm) CPT3 6.5 5.1 (SC-63) <SOT-428> 2.3  Features 1) Low saturation voltage V CE (sat) = -0.4V (Max.) (I C / I B= -2A / -100mA)  Applications

2SC6144

Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
Contextual Info: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.

S78DM12Q

Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
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Contextual Info: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM60014FV-C General Description Key Specifications     The BM60014FV-C is a gate driver with an isolation voltage of 2500Vrms, I/O delay time of 120ns, and

Contextual Info: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM60014FV-C General Description Key Specifications     The BM60014FV-C is a gate driver with an isolation voltage of 2500Vrms, I/O delay time of 120ns, and