2SA812 TRANSISTOR Search Results

Contextual Info: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

2SA812-M7

Abstract: 2SA812M5 2SA812 2SA812M6 2SA812-M4
Contextual Info: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

2SA812

Contextual Info: MCC TM Micro Commercial Components 2SA812-M4 2SA812-M5 2SA812-M6 2SA812-M7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: 2SA812 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. FNP EPITAXIAL SILICON TRANSISTOR ~~ TECHNICAL DATA LOW FREQUENCY AMPLIFIER * Compfemert to 2SC1623 ABSOLUTE MAXIMUM RATINGS at Tairib*2$°C Characteristic Symbol Rating Collector-Base Voltage Vcbo

2SA812

Contextual Info: DC COMPONENTS CO., LTD. 2SA812 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. SOT-23 Pinning .020 0.50 .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3

2SA812

Abstract: marking M4
Contextual Info: RECTRON 2SA812 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 * Collector current ICM : -0.1 * Collector-base voltage V(BR)CBO : -60 * Operating and storage junction TJ,Tstg: -55OC to +150OC

Contextual Info: | FORWARD INTOBNAHONAL ELECTRONICS LID , 2SC1623 SEMICONDUCTOR NPN EPITAXIAL SILICON TRANSISTOR TECH N ICA L DATA LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSC. * Coiqplement to 2SA812 ABSOLUTE MAXIMUM RATINGS a t Tan*=25°C Characteristic Symbol Rating Collector-Base Voltage

2SA812

Abstract: m6 marking transistor sot-23 2SA812M6 2SA812-M6
Contextual Info: 2SA812 SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * Complement to 2SC1623 * Collector-Base Voltage :Vcbo= -60V * Excellent Hfe linearity Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃

2SA812

Abstract: 2SC1623 MEI-1202 TC-5166 ic 926
Contextual Info: SILICON TRANSISTOR 2SA812 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters 2.8 ± 0.2 -8 Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. Vce = -6.0 V, Ic = -1 .0 mA

2SA812

Abstract: 2SC1623 2SA812M6
Contextual Info: 2SA812 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * * * Complement to 2SC1623 Collector-Base Voltage :Vcbo= -60V Excellent Hfe linearity 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating 2.4 1.3 Unit Vcbo -60 V Collector-Emitter Voltage

2SA812

Abstract: S1623 T812
Contextual Info: T812 2SA812 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * * * Complement to S1623 Collector-Base Voltage :Vcbo= -50V Excellent Hfe linearity 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating 2.4 1.3 Unit Vcbo -50 V Collector-Emitter Voltage

m6 marking transistor sot-23

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier

NEC C11531E

Abstract: 2SA812 2SC1623 C11531E C1984
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SA812 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) ) • High Voltage: VCEO = −50 V +0.1

2SA812

Abstract: Diode marking m7 m6 marking sot-23
Contextual Info: 2SA812 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous

m6 marking transistor sot-23

Abstract: 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER

2SA812M6

Abstract: 2SA812 2SC1623
Contextual Info: 2SA812 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * * * Complement to 2SC1623 Collector-Base Voltage :Vcbo= -60V Excellent Hfe linearity 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating 2.4 1.3 Unit Vcbo -60 V Collector-Emitter Voltage

marking of m7 diodes

Abstract: 2SA812
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA812 SOT-23-3L TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES W (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current A ICM : -0.1 Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA812 1. BASE TRANSISTOR PNP 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current A ICM : -0.1

Contextual Info: 2SA812 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V Collector Current - Continuous IC

2SA812

Abstract: 2SC1623
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SA812 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD <R> PACKAGE DRAWING Unit: mm 0.4 +0.1 –0.05 2.8 ± 0.2 2 1 3 Marking 1. Emitter 2. Base 3. Collector 0 to 0.1 1.1 to 1.4 0.16 +0.1 –0.06 0.3 TYP. 2.9 ± 0.2 VCBO −60 V

m6 marking transistor sot-23

Abstract: transistor SOT23 m6 hFE-200 transistor PNP marking M6 transistor M5 SOT23 2sa812
Contextual Info: 2SA812 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

smd transistor m6

Abstract: transistor smd marking m6 smd transistor M5 smd transistor m7 M6 smd transistor smd transistor marking M6 m4 SMD Transistor SMD TRANSISTOR M6 SOT23 smd transistor marking M6 PNP smd transistor 2sa812
Contextual Info: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SA812 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High DC Current Gain: hFE = 200 TYP. VCE = -6.0 V, IC = -1.0 mA 0.4 3 1 0.55 High Voltage: VCEO = -50 V 2 +0.1 0.95-0.1