2SA2161 Search Results
2SA2161 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 2SA2161G0L | Panasonic | Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 12VCEO 500MA SSMINI3P | Original | 4 | |||
| 2SA2161J | Panasonic | Transistor for general amplification. Complementary to 2SC6037J | Original | 78.79KB | 3 | ||
| 2SA2161J0L | Panasonic | Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 12VCEO 500MA SSMINI3P | Original | 3 |
2SA2161 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2SA2161J
Abstract: 2SC6037J
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Original |
2002/95/ec2sc6037j2sa2161j | |
2SA2161J
Abstract: 2SC6037J 2SA21
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2002/95/ec2sc6037j2sa2161j2sa21 | |
SC-89 JEDECContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2161J Silicon PNP epitaxial planar type Unit: mm 0.80±0.05 For general amplification Complementary to 2SC6037J 1.60+0.05 –0.03 1.00±0.05 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50) |
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2002/95/ec2sa2161j2sc6037jsc-89 jedec | |
2SC6037J
Abstract: 2SA2161G 2SC6037G 2SC603
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Original |
2002/95/ec2sc6037g2sa2161g2sc6037j+1 | |
2SC603Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161J 1.00±0.05 • Features VCEO Emitter-base voltage (Collector open) VEBO Collector current |
Original |
2002/95/ec2sc6037j2sa2161j2sc603 | |
2SA21
Abstract: 2SA2161J 2SC6037J 2SC603
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Original |
2sc6037j2sa2161j2sa212sc603 | |
2SA2161GContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2161G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6037G • Package • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and |
Original |
2002/95/ec2sa2161g2sc6037g | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2161J Silicon PNP epitaxial planar type Unit: mm 0.80±0.05 For general amplification Complementary to 2SC6037J 1.60+0.05 –0.03 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ |
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2002/95/ec2sa2161j2sc6037j | |
2SA2161J
Abstract: SOT-490 2SC6037J SC-89 2SA2161
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2002/95/ec2sa2161j2sc6037jsc-89+3 | |
2SA2161J
Abstract: 2SC6037J SC-89
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2002/95/ec2sa2161j2sc6037jsc-89+1 | |
marking 2U 40 diode
Abstract: marking 2U 20 diode 2SA2161J 2SC6037J SC-89 SC-89 JEDEC
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2sa2161j2sc6037jmarking 2u 40 diodemarking 2u 20 diode+2 | |
2SA2161J
Abstract: 2SC6037J
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Original |
2002/95/ec2sc6037j2sa2161j | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2161G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6037G • Features ■ Package • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and |
Original |
2002/95/ec2sa2161g2sc6037g | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161G • Package Low collector-emitter saturation voltage VCE(sat) SS-Mini type package, allowing downsizing of the equipment and automatic |
Original |
2002/95/ec2sc6037g2sa2161g | |
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2SA2161G
Abstract: marking 2U 40 diode 2SA21
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2002/95/ec2sa2161g2sc6037gmarking 2u 40 diode+1 | |
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Contextual Info: Transistors 2SA2161J Silicon PNP epitaxial planar type Unit: mm 0.80±0.05 For low-frequency amplification Complementary to 2SC6037J 1.60+0.05 –0.03 1.00±0.05 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) • Absolute Maximum Ratings Ta = 25°C Parameter Symbol |
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2sa2161j2sc6037j | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161G • Features Package Low collector-emitter saturation voltage VCE(sat) SS-Mini type package, allowing downsizing of the equipment and automatic |
Original |
2002/95/ec2sc6037g2sa2161g | |
2SC603Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6037J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2161J 1.00±0.05 • Features Unit Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open) |
Original |
2002/95/ec2sc6037j2sa2161j2sc603 | |
2SA2161J
Abstract: 2SC6037J SC-89 2SC603 SC-89 JEDEC
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2002/95/ec2sa2161j2sc6037jsc-89+2 | |
2SA2161G
Abstract: 2SC6037J 2sc6037g 2SA21
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2002/95/ec2sc6037g2sa2161g2sc6037j+1 | |
MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
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pamp13-n1mip2f3mip2f4mip382+7 | |
ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
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respons39o-220d-a1ma26p02maz3082j+15 | |
2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
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responsibilixp08081xp08546xp0a554xp0d873+13 | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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p462-ndp463-ndlng295lfcp2ulng395mftp5u+11 | |