2SA20 Search Results

Contextual Info: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor Outline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)

Contextual Info: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)

Contextual Info: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)

Contextual Info: 2SA2701 / 2SA2702 Datasheet PNP -3.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -3.0A MPT3 Collector CPT3 Base Collector Base Emitter Emitter 2SA2071 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5824 / 2SC5825

2SA1774

Contextual Info: 2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AK Datasheet PNP -150mA -50V General Purpose Transistors Outline Parameter Value VCEO IC 50V 150mA VMT3 EMT3F Collector Collector Base Base Emitter Emitter 2SA2029 SC-105AA Features

2SA2098

Abstract: 2sc5887 IC 7495 datasheet TA-372 2SA2098-2SC5887 ic 7495 2SA20 7495 ic
Contextual Info: Ordering number : ENN7495 2SA2098 / 2SC5887 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2098 / 2SC5887 High-Current Switching Applications Applications • Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm 2041A Features • 3.2

2sa2099

Abstract: 2SC5888 equivalent transistor 2sc5888 ENN7331 2SA20 D2502
Contextual Info: Ordering number : ENN7331 2SA2099 / 2SC5888 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2099 / 2SC5888 High-Current Switching Applications Applications • Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm 2041A Features • 3.2

Contextual Info: 2SA2018 / 2SA2030 / 2SA2119K Transistors Low frequency transistor 2SA2018 / 2SA2030 / 2SA2119K The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. zDimensions Unit : mm zApplications For switching, for muting.

2SA2092

Contextual Info: 1A / 60V Bipolar transistor 2SA2092 Features 1 High speed switching. tf : Typ. : 30ns at IC = 1A) 2) Low saturation voltage. (Typ. : 200mV at IC = 500mA, IB = 50mA) 3) Strong discharge resistance for inductive load and capacitance load.

2SA2031

Abstract: 2SC5669
Contextual Info: AOK Product Specification AOK Semiconductor 2SA2031 Silicon PNP Power Transistors DESCRIPTION • W ith TO -3PN package • C om plem ent to type 2SC 5669 • W ide area o f safe operation • Large current capacitance APPLICATIONS • For audio frequency output applications

SMD TRANSISTOR MARKING bw

Abstract: 2SA2018
Contextual Info: Transistors IC SMD Type Low Frequency Transistor 2SA2018 SOT-523 Unit: mm +0.1 1.6-0.1 1.0 +0.05 0.2-0.05 +0.1 -0.1 +0.15 1.6-0.15 1 +0.05 0.8-0.05 2 A collector current is large +0.01 0.1-0.01 0.55 Features Collector saturation voltage is low. VCE sat 250mA

2SA2058

Contextual Info: 2SA2058 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2058 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.2 A • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)

2SA20

Abstract: 2SA2056
Contextual Info: 2SA2056 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2056 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max)

2SA2066

Contextual Info: 2SA2066 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2066 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.2 A • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)

2SA2071

Abstract: 2SC5824 T100
Contextual Info: Power transistor 60V, 3A 2SA2071 Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2A) 3) Strong discharge power for inductive load and capacitance load.

6914

Abstract: 2044B 2SA2043 2SC5709 IT00171
Contextual Info: Ordering number : ENN6914 2SA2043 / 2SC5709 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2043 / 2SC5709 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2045B [2SA2043 / 2SC5709]

2SA2015

Abstract: 2SA20 IT00202 2SC5568
Contextual Info: Ordering number:ENN6308 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2015/2SC5568 DC/DC Converter Applications Applications Package Dimensions • Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2163 Features [2SA2015/2SC5568] · Adoption of MBIT processes.

2SA20

Abstract: 2SA2031 2SC5669
Contextual Info: SavantIC Semiconductor Product Specification 2SA2031 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SC5669 ·Wide area of safe operation ·Large current capacitance APPLICATIONS ·For audio frequency output applications

2SA20

Abstract: 2SA2025 2SA202
Contextual Info: Ordering number:ENN6404 PNP Epitaxial Planar Silicon Transistor 2SA2025 DC/DC Converter Applications Applications Package Dimensions • Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2033A Features [2SA2025] · Adoption of MBIT processes. · Large current capacitance.

2SA2069

Contextual Info: 2SA2069 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2069 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.15 A • Low collector-emitter saturation voltage: VCE (sat) = −0.14 V (max)

2sc5706

Abstract: 2SC5706 equivalent 2SA2039 transistor 2sa2039 ENN6912 2044B 2sc5706 equivalent transistor 2sc5706 transistor VR10
Contextual Info: Ordering number : ENN6912 2SA2039 / 2SC5706 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2039 / 2SC5706 High Current Switching Applications Features Package Dimensions DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2045B

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2009G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency high breakdown voltage amplification • Package • High collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5848 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2079 Unit: mm 3 2 Symbol Collector-base voltage (Emitter open) VCBO Collector-emitter voltage (Base open)

2SA2018

Abstract: 2SC2412K
Contextual Info: EMZ8 / UMZ8N Transistors Power management dual transistors EMZ8 / UMZ8N zExternal dimensions (Unit : mm) zFeature 1) Both a 2SA2018 chip and 2SC2412K chip in a EMT or UMT package. 0.22 (5) (6) (2) 1.2 1.6 (1) 0.5 0.13 zEquivalent circuits (3) (4) 0.5 0.5