2SA1955 Search Results

sat 1205

Abstract: 2SA1955FV
Contextual Info: 2SA1955FV シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1955FV ○ 低周波増幅用 ○ スイッチング用 ○ ミューティング用 0.22±0.05 項 目 記 号 定 格 2 単位 コ レ ク タ ･ ベ ー ス 間 電 圧

2SA1955F

Contextual Info: 2SA1955F シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1955F ○ 低周波増幅用 ○ スイッチング用 ○ ミューティング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) (1) = −15 mV (標準)

2SA1955

Contextual Info: 2SA1955 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA •

2SA1955

Abstract: HN7G01FE SSM3K03FE
Contextual Info: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)

2SA1955

Contextual Info: 2SA1955 TO SH IBA 2 S A 1 955 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION 1.6 ± 0.2 ,0.8 ± 0 .1, r— : —1 • Low Saturation Voltage : VCE (sat) (1) = - l5mV (TyP-)

2SA1955F

Contextual Info: 2SA1955F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955F General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA

Contextual Info: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)

2SA1955

Abstract: 2SK1830 HN7G01FU HIGH POWER MOSFET TOSHIBA 2SK1830 MOSFET
Contextual Info: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)

2SA1955

Abstract: HN7G03FU SSM3K04FU
Contextual Info: HN7G03FU TOSHIBA Multichip Discrete Device HN7G03FU Unit: mm Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications Q1 transistor : 2SA1955 equivalent Q2 (S-MOS) : SSM3K04FU equivalent Q1 Maximum Ratings (Ta = 25°C)

2SA1955

Abstract: HN7G01FE SSM3K03FE
Contextual Info: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Unit: mm Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (Transistor) Maximum Ratings (Ta = 25°C)

2SA1955

Abstract: 2SK1830 HN7G01FU 2SK1830 MOSFET
Contextual Info: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)

HN7G01FU

Abstract: 2SA1955 2SK1830 Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA
Contextual Info: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent · Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)

2SA1955FV

Contextual Info: 2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955FV General Purpose Amplifier Applications Switching and Muting Switch Application 0.22±0.05 1 2 3 Symbol Rating Unit Collector-base voltage VCBO −15 V Collector-emitter voltage

Contextual Info: TOSHIBA 2SA1955 TO SH IBA TRANSISTO R SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 955 G EN ERA L PURPOSE A M PLIFIER APPLICATIO NS Unit in mm SW ITCH IN G A N D M U T IN G SW ITCH A PPLICATIO N 1 .6 1 0 .2 0.8 ± 0 .1, • Low Saturation Voltage • Large Collector Current

Contextual Info: 2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955FV General Purpose Amplifier Applications Switching and Muting Switch Application 0.22±0.05 Large collector current: IC = −400 mA (max) 0.32±0.05 0.8±0.05 0.4 • 1.2±0.05 @IC = −10 mA/IB = −0.5 mA

2SA1955

Contextual Info: 2SA1955 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA •

2SA1955

Contextual Info: 2SA1955 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA ·

Contextual Info: TOSHIBA TENTATIVE HN7G01 FU TO SHIBA M U LTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER M A N A G E M E N T SWITCH APPLICATION 2.1 i 0,1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATIO N Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent

Contextual Info: 2SA1955F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955F General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA

2SA1955

Abstract: 2SK1830 HN7G01FU Scans-005646 HN7G01 marking za mosfet MOSFET MARKING ZA
Contextual Info: TO SH IBA TENTATIVE HN7G01FU TOSHIBA MULTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER MANAGEMENT SWITCH APPLICATION 2.1 i 0.1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATION Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent

Contextual Info: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)

2SA1955

Abstract: 2SK1830 HN7G01FU
Contextual Info: HN7G01FU TOSHIBA TOSHIBA TENTATIVE MULTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER MANAGEMENT SWITCH APPLICATION 2.1 ± 0.1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATION Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent

2SA1955

Abstract: HN7G03FU SSM3K04FU
Contextual Info: HN7G03FU TOSHIBA Multichip Discrete Device HN7G03FU Unit: mm Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications Q1 transistor : 2SA1955 equivalent Q2 (S-MOS) : SSM3K04FU equivalent Q1 Absolute Maximum Ratings (Ta = 25°C)

2SA1955

Abstract: HN7G03FU SSM3K04FU
Contextual Info: HN7G03FU 東芝複合デバイス HN7G03FU ○ パワーコントロールスイッチ用 ○ ドライバー回路用 ○ インターフェイス回路用 z Q1（トランジスタ） z Q2（S-MOS 単位: mm : 2SA1955 相当 : SSM3K04FU 相当 Q1 絶対最大定格 Ta = 25°C)