2SA1953 Search Results

Contextual Info: 2SA1953 TOSHIBA 2 S A 1 953 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION *•0.5 Low Saturation Voltage VCE (sat) (D = - 15mV (TyP-) Large Collector Current

Contextual Info: 2SA1953 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1953 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA •

2SA1953

Contextual Info: 2SA1953 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1953 ○ 低周波増幅用 ○ スイッチング用 ○ ミューティング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) (1) = −15 mV (標準)

2SA1953

Contextual Info: 2SA1953 TO SH IBA 2 S A 1 953 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION + 0.5 2 .5 -0 .3 + 0.25 k 1-5 - ° - 15>i Low Saturation Voltage r\ X U I I 1 A / 1J3 =

Contextual Info: 2SA1953 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1953 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA •

Contextual Info: TO SHIBA 2SA1953 2 S A 1 953 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm GENERAL PURPOSE AM PLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION Low Saturation Voltage Large Collector Current h 0.5 : VCE (sat) d ) = - 15mV (TyP-)

Contextual Info: 2SA1953 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1953 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA •

2SA1953

Contextual Info: 2SA1953 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1953 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA ·

Contextual Info: 2SA1953 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1953 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA •

2SA1953

Contextual Info: TOSHIBA 2SA1953 2 S A 1 953 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm GENERAL PURPOSE AM PLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION Low Saturation Voltage Large Collector Current + 0.5 VCE (sat) (D = - 15mV (TyP-)

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

TPCA*8030

Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S

TC7SZ08FU

Abstract: lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent
Contextual Info: General-Purpose Small-Signal Surface-Mount Devices PRODUCT GUIDE CONTENTS 1. Package Information 3 to 6 2. Small Signal Transistors and Diodes 2.1 New Products 2.2 Small-Signal Transistors 2.3 Bias Resistor Transistora BRTs 6.1 Single Output type 6.2 Dual Output type

GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

2SC5471

Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
Contextual Info: Part Number Product Category Polarity Collector-Emitter Voltage V_CEO,max V 2SC1815 Transistor for Low-Frequency Small-Signal Amplification NPN 50.0 150.0 0.25 2SA1015 Transistor for Low-Frequency Small-Signal Amplification PNP -50.0 -150.0 -0.3 2SC2458 Transistor for Low-Frequency Small-Signal Amplification NPN

*45F122

Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ