2SA1680 TRANSISTOR Search Results

transistor A1680

Abstract: 2sa1680 TRANSISTOR a1680 A1680 transistor 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC4408 transistor 2SA1680
Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)

transistor A1680

Abstract: 2SA1680 A1680 transistor 2sa1680 TRANSISTOR transistor 2SA1680 2SC4408 A1680
Contextual Info: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)

LED display module

Contextual Info: MULTI CHIP BIPOLAR DIGITAL INTEGRATED CIRCUIT TD62M8604AF 8ch LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is M ulti Chip 1C incorporates 8 low saturation discrete PNP : 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED

transistor 2SA1680

Abstract: 2SA1680 2SC4408 A1680 SA1680 TRANSISTOR A1680 2sa1680 TRANSISTOR
Contextual Info: 2SA1680 TO SH IBA 2 S A 1 680 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 5.1 MAX Low Collector Saturation Voltage : VCE(sat)“ —0.5V (Max.) (1^= -1A )

Contextual Info: TOSHIBA TRANSISTOR 2 S A 1 680 SEMICONDUCTOR TOSHIBA TECHNICAL SILICON PNP EPITAXIAL TYPE PCT PROCESS DATA (2SA1680) Unit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • • • • 5.1 MAX Low Collector Saturation Voltage : VCE(sat)“ —0.5V (Max.) (1^= -1A )

Contextual Info: 2SA1680 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 Unit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • 5.1 MAX Low Collector Saturation Voltage : VcE(sat) = -0.5V (Max.) (IC = - 1A) High Collector Power Dissipation : P q = 900mW (Ta = 25°C)

TO-3P

Abstract: 2SC3303 2sc3783 2sc3233 2sc2562 2sa1329 2sd717 2sc2655 2sb754
Contextual Info: Transistors Industrial use Regulator T ransistors F1 Appli­ cation £ 3 9 Max Rating (Tc=25"C) Type No. V obo{V) VCHO(V) 10(A) Appli­ cation Package Pc(W) TJCO Max Rating (Tc=25*C) Type No. V c b o (V) VCEO(V) Package lc(A) Pc(W) 2SC3075 0.8 10 Power Mold

transistor c4408

Abstract: c4408 c4408 transistor 2SA1680 2SC4408
Contextual Info: 2SC4408 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4408 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW

transistor c4408

Abstract: c4408 c4408 transistor transistor 2Sc4408 2sc4408 2SA1680
Contextual Info: 2SC4408 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4408 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ