NF807
Abstract: 2SA1015
Contextual Info: 2SA1015 PNP SILICON TRANSISTOR TO-92B 2SA1015 is PNP silicon planar transistor designed for audio frequency general purpose amplifier applications and driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 50V Collector-Emitter Voltage
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2sa1015o-92b150ma400mw+5l00ma100na300ns3-430181-frnf807
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transistor 2sa1015y
Abstract: 2sa1015 2SA1015Y 2SA1015-Y 2SA1015 G 2SA1015 GR 2SA1015 Y 2SA1015GR A1015 GR
Contextual Info: MCC TM Micro Commercial Components 2SA1015 2SA1015-O 2SA1015-Y 2SA1015-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • Capable of 0.4Watts of Power Dissipation.
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2sa10152sa1015-o2sa1015-y2sa1015-gr+11-55oca1015100uadc50vdctransistor 2sa1015y2sa1015y2sa1015 g2sa1015 gr2sa1015 y2sa1015gra1015 gr
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2SC1815
Abstract: 2sa1015 toshiba
Contextual Info: 2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1015 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) •
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2sa1015
Abstract: 2SC1815 ma2580 toshiba 2sa1015
Contextual Info: 2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1015 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) •
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2sa10152sc1815ma2580toshiba 2sa1015 |
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2sa1015
Abstract: 2sa1015 datasheet 2sa1015 equivalent 2SC1815 2Sa1015 toshiba
Contextual Info: 2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1015 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) ·
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2sa10152sc18152sa1015 datasheet2sa1015 equivalent+12sa1015 toshiba
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2SA1015
Abstract: pnp transistor 6V transistor amplifier 5v to 6v 2sa1015 transistor
Contextual Info: Í K . 2SA1015 PNP SILICON '• A Si 1», '^ÊÊRS IS TRANSISTOR TO-92B 2SA1015 is PNP silicon planar transistor designed for 4 audio frequency general purpose amplifier applications and driver stage amplifier applications. ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage
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2sa1015o-92b150ma400mw+6100maici100ma300nspnp transistor 6vtransistor amplifier 5v to 6v2sa1015 transistor
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Contextual Info: 2SA1015 TOSHIBA 2SA1015© TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS LO W NOISE AM PLIFIER APPLICATIONS • High Voltage and High Current : V q E q = _ 50V (Min.), Iq = - 150mA (Max.) Excellent hFE Linearity
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2sa1015150ma2sc1815temperatu00+1961001eaa2
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2SA1015
Abstract: toshiba 2sa1015 2sc1815a 2SC1815
Contextual Info: 2SA1015 TO SH IBA 2SA1015© TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS LOW NOISE AMPLIFIER APPLICATIONS • • • • High Voltage and High Current : V çjeO = - 50V (Min.), 10 = - 150mA (Max.)
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2sa1015150ma2sc1815toshiba 2sa1015+12sc1815a
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2SA1015
Abstract: 2sa1015gr 2SA1015 GR 2SA1015-Y A1015 y
Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • • Capable of 0.4Watts of Power Dissipation.
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2sa1015-o2sa1015-y2sa1015-gr-55oc+7125oca1015-100uadc2sa10152sa1015gr2sa1015 gra1015 y
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2sa1015
Abstract: 2SA1015-Y 2SA1015 GR 2SA1015 Y 2SA1015GR transistor 2sa1015y 2SA1015Y
Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • Capable of 0.4Watts of Power Dissipation.
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2sa1015-o2sa1015-y2sa1015-gr-55oc+9125oca1015100uadc2sa10152sa1015 gr2sa1015 y2sa1015grtransistor 2sa1015y2sa1015y
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A1015 gr
Abstract: 2sa1015 a1015 transistor 2SA1015 GR transistor 2sa1015y 2SA1015-Y 2SA1015 G 2SA1015 Y 2SA1015GR A1015 TO92
Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A
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2sa1015-o2sa1015-y2sa1015-gr-55oc+10a1015a1015 gr2sa1015a1015 transistor2sa1015 grtransistor 2sa1015y2sa1015 g2sa1015 y2sa1015gra1015 to92
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2SA1015
Abstract: 2SA1015 GR 2SA1015GR A1015
Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • Capable of 0.4Watts of Power Dissipation.
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2sa1015-o2sa1015-y2sa1015-gr-55oc+6125oca1015100uadc2sa10152sa1015 gr2sa1015gr
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2SA1015
Abstract: transistor A1015 GR 2SA1015-Y 2SA1015 G 2SA1015 GR 2SA1015 Y 2SA1015GR
Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A
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2sa1015-o2sa1015-y2sa1015-gr-55oc+7a10152sa1015transistor a1015 gr2sa1015 g2sa1015 gr2sa1015 y2sa1015gr
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2SA1015
Abstract: 2SC1815 data 2sa1015
Contextual Info: 2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1015 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA
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transistor 2sa1015y
Abstract: 2SA1015Y transistor A1015 2sa1015 transistor a1015 transistor A1015 A1015 gr 2sa1015 2sa1015 datasheet PNP 2SA1015GR
Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A
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2sa1015-o2sa1015-y2sa1015-gr-55oc+10a1015transistor 2sa1015y2sa1015ytransistor a10152sa1015 transistora1015 transistora1015 gr2sa10152sa1015 datasheetpnp 2sa1015gr
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2SA1015
Abstract: 2SA1015 GR 2SA1015GR 2sa1015y
Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • • Capable of 0.4Watts of Power Dissipation.
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2sa1015-o2sa1015-y2sa1015-gr-55oc+7125oca1015-100uadc2sa10152sa1015 gr2sa1015gr2sa1015y
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2SA1015
Abstract: 2SA1015 GR 2SA1015GR transistor 2sa1015y transistor 2SA1015
Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • • • Capable of 0.4Watts of Power Dissipation.
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2sa1015-o2sa1015-y2sa1015-gr-55oc+7125oca10152sa10152sa1015 gr2sa1015grtransistor 2sa1015ytransistor 2sa1015
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A1015
Abstract: 2SA1015 2SA1015 GR 2SA1015GR transistor A1015
Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • • Capable of 0.4Watts of Power Dissipation.
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2sa1015-o2sa1015-y2sa1015-gr-55oc+7125oca1015-100uadc2sa10152sa1015 gr2sa1015grtransistor a1015
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2sa1015
Abstract: 2sa1015 datasheet 2sa1015 equivalent 2sa1015 transistor 2SA1015L transistor 2sa1015 2SC1815 2SA1015 Toshiba
Contextual Info: 2SA1015 L TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) · Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA
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2sa10152sc18152sa1015 datasheet2sa1015 equivalent+42sa1015 transistor2sa1015ltransistor 2sa10152sa1015 toshiba
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2sa1015
Abstract: 2SA1015L 2SC1815 2sa1015 transistor
Contextual Info: 2SA1015 L TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA
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2sa10152sc18152sa1015l2sa1015 transistor |
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2SC1815
Abstract: 2SA1015L 2SA1015
Contextual Info: 2SA1015 L TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA
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25F1B
Abstract: 2SC1815 2SA1015L 2SC1815 2SA1015
Contextual Info: 2SA1015 L TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • Unit: mm High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) • Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA
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2sa10152sc181525f1b2sa1015l+12sc1815 2sa1015
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Contextual Info: MCC TM Micro Commercial Components 2SA1015-O 2SA1015-Y 2SA1015-GR omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • • • Capable of 0.4Watts of Power Dissipation.
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2sa1015-o2sa1015-y2sa1015-gr-55oc+2125oca1015
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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2sa11622sa11632sc18152sa1015+162sc24582sc24592sa10482sa10492sc27122sc271370h40transistor equivalent d20122sc734 equivalent3sk73 equivalent2sb5022sa776 bl2sc2075 equivalent2sk for low noise audio amplifier applications2sa970 bl equivalent2sa776 gr
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