2PD601ASW Search Results

smd transistor 6d

Abstract: SMD Transistor 6f marking 6d SMD TRANSISTOR MARKING 6D 6E SMD 6F SMD 6F SMD Transistor transistor 625 smd transistor marking 6d 2PD601AQW
Contextual Info: Transistors SMD Type NPN General Purpose Transistor 2PD601AW Features High collector current max. 100 mA Low collector-emitter saturation voltage (max. 500 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

2PD601A

Contextual Info: DISCRETE SEMICONDUCTORS DAT 2PD601A series NPN general purpose transistors; 50 V, 100 mA Product data sheet Supersedes data of 2002 Jun 26 2004 Feb 12 NXP Semiconductors Product data sheet NPN general purpose transistors; 50 V, 100 mA FEATURES 2PD601A series

transistor number code book FREE

Abstract: 2PD601ASW 2PD601AW SC18 2PB709AW 2PD601AQW 2PD601ARW
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 2PD601AW NPN general purpose transistor Preliminary specification 2002 Jun 26 Philips Semiconductors Preliminary specification NPN general purpose transistor 2PD601AW FEATURES PINNING • High collector current max. 100 mA

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2PD601AW TRANSISTOR NPN FEATURES  High Collector Current  Low Colletor-Emitter Saturation Voltage APPLICATIONS SOT–323  General Purpose Switching and Amplification

2PD601A

Abstract: 2PD601AQW 2PD601AR 2PD601ARW 2PD601AS 2PD601ASW 2PD601AQ e1 IC sot323
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET 2PD601A series NPN general purpose transistors; 50 V, 100 mA Product specification Supersedes data of 2002 Jun 26 2004 Feb 12 Philips Semiconductors Product specification NPN general purpose transistors; 50 V, 100 mA 2PD601A series

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2PD601AW TRANSISTOR NPN FEATURES  High Collector Current  Low Colletor-Emitter Saturation Voltage APPLICATIONS SOT–323  General Purpose Switching and Amplification

Contextual Info: Product specification 2PD601AW Features High collector current max. 100 mA Low collector-emitter saturation voltage (max. 500 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V

NPN Silicon Epitaxial Planar Transistor

Abstract: TRANSISTOR BL 100 transistor marking 6d transistor 6D TRANSISTOR code marking 6f marking 6D 2PD601AQW 2PD601ARW 2PD601ASW 2PD601AW
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Collector Current. IC= 100mA） z Excellent HFE Linearity. z Power dissipation.(PC=200mW 2PD601AW Pb Lead-free APPLICATIONS z General purpose application. SOT-323

2PD601A

Abstract: 2PD601AQ 2PD601AQW 2PD601AR 2PD601ARW 2PD601AS 2PD601ASW SOT346
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET 2PD601A series NPN general purpose transistors; 50 V, 100 mA Product data sheet Supersedes data of 2002 Jun 26 2004 Feb 12 NXP Semiconductors Product data sheet NPN general purpose transistors; 50 V, 100 mA FEATURES 2PD601A series