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    2N7526

    Abstract: 2N7525 IRHG57110 MIL-STD-750 method 3161 MO-036AB 2n7521
    Contextual Info: INCH-POUND MIL-PRF-19500/740 13 December 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE AND SINGLE EVENT EFFECTS QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON TYPES 2N7521U, 2N7522U, 2N7525, AND 2N7526, JANTXVR AND F AND JANSR AND F


    Original     		mil-prf-19500/7402n7521u2n7522u2n7525+62n7526mil-prf-19500irhg57110mil-std-750 method 3161mo-036ab2n7521 PDF

    2N7550

    Abstract: 2N7520 2n7546 2n7545 2N7549 2n7479 2N7481 2N7480 2N7471 2N7476
    Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 April 2009. METRIC MIL-PRF-19500/741A 30 January 2009 SUPERSEDING MIL-PRF-19500/741 14 March 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED


    Original     		mil-prf-19500/741amil-prf-19500/741mil-prf-195002n7550+92n75202n75462n75452n75492n74792n74812n74802n74712n7476 PDF