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2N7509 Abstract: transistor 1020 2N7510 FSGJ264 FSGJ160 Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 3 January 2009. INCH-POUND MIL-PRF-19500/687B 3 October 2008 SUPERSEDING MIL-PRF-19500/687A 12 July 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE AND	Original	mil-prf-19500/687b mil-prf-19500/687a 2n7509 2n7510 +52n7511 mil-prf-19500 transistor 1020 fsgj264 fsgj160	PDF

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2N7509

Abstract: transistor 1020 2N7510 FSGJ264 FSGJ160
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 3 January 2009. INCH-POUND MIL-PRF-19500/687B 3 October 2008 SUPERSEDING MIL-PRF-19500/687A 12 July 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE AND

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mil-prf-19500/687b mil-prf-19500/687a 2n7509 2n7510 +5

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