2N7002K EQUIVALENT Search Results

2N7002K

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs 2N7002K N-channel MOSFET SOT-23 FEATURES z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

sot-23 Marking k7k

Abstract: k7k sot-23 2N7002K K7K 2N7002K marking code k7k transistor marking code k7k 2N7002K-7 transistor marking 61 transistor 2N7002K DS30896
Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • Mechanical Data • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 2

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2N7002K N-channel MOSFET SOT-23 FEATURES z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

2N7002K

Abstract: 2N7002k wc
Contextual Info: SEMICONDUCTOR 2N7002K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V. E B L L High density cell design for low RDS ON . D Voltage controlled small signal switch. 2 A G Rugged and reliable.

2N7002K

Contextual Info: SEMICONDUCTOR 2N7002K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES ・ESD Protected 2000V. E B L L ・High density cell design for low RDS ON . D ・Voltage controlled small signal switch. 2 A 3 G ・Rugged and reliable.

marking 72K

Abstract: n-channel mosfet SOT-23 diode RL-250 SOT23 72k MOSFET 50V 100A MOSFET SOT-23 mosfet Vds 30 Vgs 25 IGSS transistor 2N7002K 2N7002K
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2N7002K N-channel MOSFET SOT-23 FEATURES z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

2N7002K

Contextual Info: SEMICONDUCTOR 2N7002K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES ESD Protected 2000V. E B L L High density cell design for low RDS ON . D Voltage controlled small signal switch. 2 A G Rugged and reliable.

2n7002k EQUIVALENT

Abstract: k7k transistor DS30896
Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • Mechanical Data • • Low On-Resistance Low Input Capacitance Fast Switching Speed

sot-23 Marking k7k

Abstract: 2N7002K k7k sot-23 2N7002K-7 2N7002K K7K
Contextual Info: 2N7002K Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Notes 1 and 2 ESD Protected Up To 2kV

2N7002KQ-7

Abstract: k7k sot-23 sot-23 Marking k7k 2N7002K-7 2N7002K-2 2N7002K K7K
Contextual Info: 2N7002K Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Notes 1 and 2 ESD Protected Up To 2kV

2N7002KQ-13

Abstract: 2N7002KQ-7
Contextual Info: 2N7002K Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Notes 1 and 2 ESD Protected Up To 2kV

Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed

Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage 

MARKING C7K

Abstract: MSOT-23 2n7002k EQUIVALENT
Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage

Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage

MARKING C7K

Abstract: 2N7002K-7 2n7002k EQUIVALENT
Contextual Info: 2N7002K Green N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage

Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • • • Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance

2N7002K-7

Abstract: 2N7002KQ-7 2N7002K1
Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"

2n7002k EQUIVALENT

Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"

MARKING C7K

Abstract: 2N7002KQ-13 2N7002K-7
Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"

Contextual Info: 3VD060060NEJL 3VD060060NEJL N-CH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE DESCRIPTION Ø 3VD060060JL is a N-Channel enhancement mode MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Zener diode ESD protected up to 2KV Ø High density cell design for low RDS ON

zener wafer

Abstract: 2N7002K Power MOSFET Wafer
Contextual Info: 3VD060060NEJL 3VD060060NEJL STRUCTURE N-CH MOSFET CHIPS WITH ESD PROTECTED DESCRIPTION Ø 3VD060060JL is a N-Channel enhancement mode MOSFET chip fabricated in advanced silicon epitaxial planar technology. Ø Zener diode ESD protected up to 4KV HMB . Ø High density cell design for low RDS(ON).

zener wafer

Abstract: 2N7002K Power MOSFET Wafer
Contextual Info: 3VD050060NEJL 3VD050060NEJL STRUCTURE N-CH MOSFET CHIPS WITH ESD PROTECTED DESCRIPTION Ø 3VD050060NEJL is a N-Channel enhancement mode MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Zener diode ESD protected up to 4000V HBM Ø

Contextual Info: 19-2335; Rev 0; 1/02 Tracking, Sinking and Sourcing, Synchronous Buck Controller for DDR Memory and Termination Supplies Features ♦ 25A Sourcing and Sinking Current ♦ Automatically Sets VTT to 1/2VDDR ♦ VTT and VTTR Within 1% of 1/2VDDR ♦ Smallest Output Capacitors