2N6668G Search Results

2N6668G

Abstract: 1N5825 2N6387 2N6388 2N6667 2N6667G 2N6668 MSD6100
Contextual Info: 2N6667, 2N6668 Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − • • • • • • http://onsemi.com hFE = 3500 Typ @ IC = 4.0 Adc Collector−Emitter Sustaining Voltage − @ 200 mAdc

Contextual Info: 2N6667, 2N6668 Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − • • • • • • http://onsemi.com hFE = 3500 Typ @ IC = 4.0 Adc Collector−Emitter Sustaining Voltage − @ 200 mAdc

Contextual Info: 2N6667, 2N6668 Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − • • • • • • http://onsemi.com hFE = 3500 Typ @ IC = 4.0 Adc Collector−Emitter Sustaining Voltage − @ 200 mAdc

2N6668G

Abstract: 2N6388 2N6387 2N6667 2N6667G 2N6668 MSD6100 1N5825 darlington transistor with built-in temperature c
Contextual Info: 2N6667, 2N6668 Darlington Silicon Power Transistors Designed for general-purpose amplifier and low speed switching applications. •ăHigh DC Current Gain - http://onsemi.com hFE = 3500 Typ @ IC = 4.0 Adc •ăCollector-Emitter Sustaining Voltage - @ 200 mAdc