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    2N60T Search Results

    2N60T Datasheets (3)

    Unisonic Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N60-TA3-T
    Unisonic Technologies 2 Amps, 600 Volts N-CHANNEL MOSFET Original PDF 142.35KB 8
    2N60-TF3-T
    Unisonic Technologies 2 Amps, 600 Volts N-CHANNEL MOSFET Original PDF 142.35KB 8
    2N60-TM3-T
    Unisonic Technologies 2 Amps, 600 Volts N-CHANNEL MOSFET Original PDF 142.34KB 8
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    2N60T Price and Stock

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    onsemi NGTG12N60TF1G

    IGBT, N-Channel, 600V, 12A, VCE(sat)=1.4V, TO-3PF-3L N-Channel IGBT, 600V, 12A, VCE(sat)=1.4V - Rail/Tube (Alt: NGTG12N60TF1G)
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    Avnet Americas NGTG12N60TF1G Tube 930
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    Rochester Electronics NGTG12N60TF1G 267 1
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    Flip Electronics NGTG12N60TF1G 690
    • 1 $0.55
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    Teledyne Relays CCS-32N60-T

    RELAY, E-MECH, COAXIAL-RF, SPDT, TYPE N (F),28VDC,50OHM, DC-12GHZ, TYPE N, CCS-32/CS-32
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    RS CCS-32N60-T Bulk 5
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    Fairchild Semiconductor Corporation FQB12N60TM

    MOSFET N-Channel 600V 10.5A (Tc) TO-263-3
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    Rochester Electronics FQB12N60TM 6,990 1
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    Fairchild Semiconductor Corporation FQD2N60TF

    MOSFET N-Channel 600V 2A (Tc) TO-252-3
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    Rochester Electronics FQD2N60TF 7,387 1
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    Fairchild Semiconductor Corporation FQU2N60TU

    MOSFET N-Channel 600V 2A (Tc) IPAK Tube
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    Rochester Electronics FQU2N60TU 10,164 1
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    2N60T Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2n60

    Abstract: 2N60 TO-251 UTC 2n60 equivalent 2n60 MOSFEt 2N60-TA3-T 2N60L utc 2n60l 2N60-TF3-T 2N60-TM3-T 2N60-TA
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


    Original
    o-220qw-r502-0532n602n60 to-251 utc+82n60 equivalent2n60 mosfet2n60-ta3-t2n60lutc 2n60l2n60-tf3-t2n60-tm3-t2n60-ta PDF

    2n60 MOSFEt

    Abstract: 2n60 to-251 mosfet B2N60
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2A 600V N-CHANNEL MOSFET 1 TO-251 FEATURES * Typical RDS ON = 3.7Ω @VGS = 10V * Avalanche rugged technology * Low gate charge (typical 9.0 nC) * Low Crss (typical 5.0 pF) * 100% avalanche tested * Excellent switching characteristics


    Original
    o-251o-252o-220o-220f+92n60l2n60-ta3-0-t2n60l-ta3-0-t2n60-tf3-0-t2n60l-tf3-0-t2n60 mosfet2n60to-251 mosfetb2n60 PDF

    CS5516-AP

    Abstract: LSB20 A/UC 3343 sod
    Contextual Info: Semiconductor Corporation 16-Bit/20-Bit Bridge Transducer A/D Converters General Description Features • Dynamic Excitation Options The CS5516 and CS5520 are complete solutions for digitizing low level signals from strain gauges, load cells, and pressure transducers. Any family of mV out­


    OCR Scan
    16-bit/20-bitlsb2020-bit200db+6cs5516cs552016-bitds74pp2cs5516-apa/uc 3343 sod PDF

    Contextual Info: 2N60T / HY2N60FT 600V / 2.0A 600V, RDS ON =4.6Ω@VGS=10V, ID=1.0A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS


    Original
    hy2n60thy2n60ft2002/95/ecito-220ab+3o-220abmil-std-7502n60t PDF