2N607 Search Results

2N6078

Contextual Info: 2N6078 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

2N6076

Contextual Info: FAIRCHILD D ISC R E TE POW ER & SIGNAL TECH N O LO G IES MICONDUCTOR i 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR BV c e o hFE 25 V Min 100 (Min) @ V c e = 10 V, Ic = 10 mA 1 2 3 1 B C E 1 ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature

Contextual Info: ^zml-Conductoi Lptoducti, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. DISCRETE POWER & SIGNAL TECHNOLOGIES f 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR BVCEO 25 V (Mln) hFE . . . . 100 (Min) @ VCE - 10 V, Ic = 10 mA

BTA26-600B

Abstract: TP6A60 TRIAC BTB 600b T410-600T triac T2500 Triac bt136 600d BTA26600B Triac cross reference bt136 BT134-600D Triac z0410nf
Contextual Info: Cross Reference - TRIAC APOLLO Part No TN1A60 Competitor STM Z010ZMA, Z00607MA On-semi Toshiba Mistubishi MAC97A8 SM1L43 BCR1AM-12 Sanken Philips BT131 TR2A60 TR4A60 Z0410NF TD4A60 T410-35-600B TR4A60S Z0405NF 2N6075 TD4A60S T405-600B MAC4DHM TP4A60S T410-600T

6075A

Abstract: 2n607 2N6073A 2N6075A 6073a 2N thyristor 2N6071
Contextual Info: MOTOROLA Order this document by 2N6071/D SEMICONDUCTOR TECHNICAL DATA 2N 6071A ,B * 2N 6073A .B * 2N 6075A .B * Sensitive Gate Triacs Silicon Bidirectional Thyristors "Motorola preferred devices . . . designed primarily for full-wave ac control applications, such as light dimmers,

k 3683 transistor

Abstract: BCxxx TRANSISTOR PN2222N 2N6076 CBVK741B019 F63TNR small signal transistor transistor k 3683 transistor k 0247
Contextual Info: DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 25 V Min 1 2 3 hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA B C E 2 0.135 - 0.145 (3.429 - 3.683) 3 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)

BT 812 600bw

Abstract: BT810 800BW BT810-800BW BT 808 600C BT 808 600 replacement TYN412 TYN408G TYN604 T2513MK TLS106-4
Contextual Info: CROSS REFERENCE INDUSTRY PART NUMBER SQS-THOMSON SQS-THOMSON DIRECT SIMILAR REPLACEMENT REPLACEMENT INDUSTRY SGS-THOMSON SGS-THOMSON DIRECT PART NUMBER. SIMILAR REPLACEMENT REPLACEMENT 2N6071 2N6071A 2N6073 2N6073A 2N6075 2N6075A 2N6342 2N6342A 2N6343 2N6343A

Contextual Info: DATA SHEET 2N6071, A, B 2N6073, A, B 2N6075, A, B SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS TO-126 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6071, A, B series types are silicon sensitive gate triacs designed for such applications as light dimmers, motor

Contextual Info: 2N6078 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

Contextual Info: 2N6079 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)375 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)26# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u¶ @V(CBO) (V) (Test Condition)450 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)1.2

2n5060 thyristor

Abstract: Silicon Controlled Rectifiers C106X Triacs 2n5060 transistor 2N6344A 2N6027-2N6028 2N5060 SCR 2N5060 2N6027
Contextual Info: THYRISTOR PART NUMBER PREFIX* DEVICE PREFIX DEVICE DESCRIPTION 2N5060 Series Silicon Controlled Rectifiers SCR 2N6027, 2N6028 Programmable Unijunction Transistor (PUT) 2N6071A Series 2N6344, 49 2N6344A, 48A, 49A Triacs 2N6394 Series 2N6400 Series 2N6504 Series

2n6071a

Abstract: 2n6075a triac firing circuit TRIAC 2N6071 A to225a 2N6075
Contextual Info: 2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are

Contextual Info: DIGITRON SEMICONDUCTORS 2N6068, A, B-2N6075,A, B SENSITIVE GATE TRIACS Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

2N6079

Abstract: 2N6078 2N6077
Contextual Info: Inchange Semiconductor Product Specification 2N6077 2N6078 2N6079 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Low collector saturation voltage ・High breakdown voltage APPLICATIONS ・For horizontal deflection output stages of TV’s and CRT’s

2n6071A

Abstract: 2n6071bg TRIAC 2N6071 A 2n6075b
Contextual Info: 2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are

BT131 equivalent

Abstract: BRX49 equivalent S6015L equivalent BTA16-600B equivalent BT134 equivalent BTA12-600B equivalent X0405MF equivalent equivalent mcr22 2N5064 equivalent BT131 600 equivalent
Contextual Info: index/cross Reference Industry Part Number Central Part Number Code 2N5060 2N5061 2N5062 2N5063 2N5064 2N6071 2N6071A 2N6071B 2N6072 2N6072A 2N6072B 2N6073 2N6073A 2N6073B 2N6074 2N6074A 2N6074B 2N6075 2N6075A 2N6075B 2N6342 2N6342A 2N6343 2N6343A 2N6344 2N6344A

Contextual Info: FAIRCHILD S E M IC O N D U C T O R DISCRETE POWER & SIGNAL TECHNOLOGIES tm 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR B V ceo . . . 25 V Min hFE . . . 100 (Min) @ V c e = 10 V, I c = 10 m A l 2 B C ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature

2N6073A

Abstract: 2N6075B to225aa to126 case 2N6071A 2N6071B 2N6073B 2N6075A MC7400
Contextual Info: 2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are

2n6075 equivalent

Abstract: 2N6068 an526 screw MAC77-8 701o MAC77 WD19 Triac 2N6075 an526 2000C
Contextual Info: ? 2N6068 thru 2N6075 ——— SILICON BiE}l SECTIONAL. designed .,. primarily light dimmers, or wherever needed. state fol’ full-wave motor full-wave silicon for either polarity negative gate triggering. e All o Small, Rugged, from c f applied solid-state

2N6076

Contextual Info: FAIRCHILD D IS C R E T E PO W ER & SIGNAL TEC H N O L O G IES MICONDUCTOR i 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR BV ceo hFE . . . . 25 V Min . . . . 100 (Min) @ V c e = 10 V, Ic = 10 mA 1 2 B C 31 E 1 ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEM PERATURES

2N6076

Abstract: 2n60
Contextual Info: DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 25 V Min 1 2 3 hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA B C E 2 0.135 - 0.145 (3.429 - 3.683) 3 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)

to225a

Abstract: 2N6071B 2N6071A 2N6073A 2N6073B 2N6075A 2N6075B MC7400 to225aa
Contextual Info: 2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are

2N6220

Abstract: 2N6256 2N6258 PNP 2N60 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051
Contextual Info: 4ÖE J> m Ö1331Ö7 00DÜ442 322 SEMELAB SEMELAB LT D TW t> \ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 2N6052 2N6053 2N6054 2N6055 2N6056 2N6057 2N6058 2N6059 2N6077 2N6078 2N6079

Contextual Info: 2N6078 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)275 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)26# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)50u¶ @V(CBO) (V) (Test Condition)250 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)1.2