2N5912 JFET Search Results

2N5912

Abstract: Siliconix 2N5912 2N5912 jfet
Contextual Info: 2N5912 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix & National 2N5912 FEATURES Improved Direct Replacement for SILICONIX & NATIONAL 2N5912 LOW NOISE 10KHz en~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz)

Siliconix 2N5912

Abstract: 2N5911 2n5912
Contextual Info: Tem ic — _ 2N5911/5912 Matched N-Channel JFET Pairs Product Summary P a rt N um ber Vg $ oB (V) V(BR)GSS M in (V) gfs M in (mS) Ig iy p (pA) 2N5911 - 1 to - 5 -25 5 -l 10 2N5912 - 1 to -5 -25 5 -l 15 |VGsi - Voszl Max (mV) 2N5912, For applications information seeAN102, page 12-6.

A561 transistor

Abstract: transistor a561 2N5911 2N5912 AN102 2N5912 jfet
Contextual Info: 2N5911/5912 Siliconix Matched NĆChannel JFET Pairs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 - VGS2j Max (mV) 2N5911 -1 to -5 -25 5 -1 10 2N5912 -1 to -5 -25 5 -1 15 2N5912, For applications information see AN102, page 6.

2N5911

Abstract: matched pair JFET Siliconix AN102 Siliconix JFET Pairs Siliconix N-Channel JFET 2N5912 AN102
Contextual Info: 2N5911/5912 Matched N-Channel JFET Pairs Product Summary gfs Min mS IG Typ (pA) jVGS1 – VGS2j Max (mV) Part Number VGS(off) (V) V(BR)GSS Min (V) 2N5911 –1 to -5 –25 5 –1 10 2N5912 –1 to -5 –25 5 –1 15 2N5912, For applications information see AN102, page 1.

2N5912

Abstract: 2N5911 2N5911-12 X2N5912
Contextual Info: Dual N-Channel JFET High Frequency Amplifier CORPORATION 2N5911 / 2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V

Contextual Info: Dual N-Channel JFET High Frequency Amplifier caiooic CORPORATION 2N5911/2N5912 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . -25V

J201 Replacement

Abstract: "DUAL N-Channel JFET" 2n4416 transistor die fairchild Dual N-Channel JFET n-channel JFET sot23-6 2n3956 equivalent transistor G1 TRANSISTOR SOT 23 PNP Siliconix "low noise jfet" J507 Replacement LS5912C
Contextual Info: LS5911 LS5912 LS5912C IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE 10kHz en ~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz) gfs ≥ 4000µS

2N5912

Contextual Info: LS5912 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix & National 2N5912 FEATURES Improved Direct Replacement for SILICONIX & NATIONAL 2N5912 LOW NOISE 10KHz en~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz)

2N5911

Abstract: 2N5912 2N5911-12 DS013 X2N5912 2N5912 jfet
Contextual Info: Dual N-Channel JFET High Frequency Amplifier LLC 2N5911 / 2N5912 ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified FEATURES • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V

Contextual Info: Dual N-Channel JFET High Frequency Amplifier LLC 2N5911 / 2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V

Contextual Info: LS5911 LS5912 LS5912C IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET FEATURES Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE 10kHz en ~ 4nV/√Hz gfs ≥ 4000µS HIGH TRANSCONDUCTANCE (100MHz) ABSOLUTE MAXIMUM RATINGS

2N5911

Abstract: LS5911 LS5912C n-channel JFET sot23-6 dss2 ls5912 2N5912 S1 SOT-23 "DUAL N-Channel JFET" 6D24
Contextual Info: LS5911 LS5912 LS5912C IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE 10kHz en ~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz) gfs ≥ 4000µS

2N5911

Abstract: 2n5912 2N5911-12 X2N5912 2NS912
Contextual Info: Dual N-Channel JFET High Frequency Amplifier CORPORATION 2N5911/2N5912 FEATURES ABSOLUTE MAXIMUM RATINGS T a = 25°C unless otherwise specified • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . -25V

2N5912

Contextual Info: LS5912 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Siliconix & National 2N5912 FEATURES Improved Direct Replacement for SILICONIX & NATIONAL 2N5912 LOW NOISE 10KHz en~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz)

Contextual Info: LS5911 LS5912 LS5912C IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET FEATURES Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE 10kHz en ~ 4nV/√Hz G1 D1 S1 gfs ≥ 4000µS HIGH TRANSCONDUCTANCE (100MHz) ABSOLUTE MAXIMUM RATINGS

U440

Abstract: JFET Matched
Contextual Info: NZFD1 DIE N-Channel JFETs C3TSiliconix J L J r incorporated The NZFD1 Die is a JFET matched pair. This two-chip design reduces high-frequency matching. parasitic while The NZFD1 ensuring performance extremely NZFD1CHP* at tight 2N5912 U440 U441 Die features high speed

U257

Abstract: 2N5911-12 2N5912 2N5912CHP U312 U312CHP Siliconix Dual N-Channel JFETs
Contextual Info: • • Performance Curves NZF See Section 5 • BENEFITS • High Gain through 100 MHz gfs > 5000 ¿¿mho • Matching Characteristics Specified • Wideband D ifferential Amplifiers 2N5912 designed fo r H S ilic o n ix 2N5911 matched dual n-channel JFETs

Dual N-Channel JFET

Abstract: 2N5912 2N5911 CA2N5911H CA2N5911X CA2N5912H CA2N5912X 2N5912 jfet "DUAL N-Channel JFET"
Contextual Info: CALOGIC CORP EIE D • 1ÖM432S OOGOG? 3 _ Wideband Mafched Dual N-Channel JFETs caloriC CORPORATION r-3hzs Ü 2N5911/2N5912 FEATURES • • • • DESCRIPTION I High Gain through 100 M H z. g 3>5000/imho Low O ffset . 10mV Max.

2N5911

Abstract: matched pair JFET 2N5912 TO78 package AN102
Contextual Info: 2N5911/5912 Vishay Siliconix Matched N-Channel JFET Pairs PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 – VGS2j Max (mV) 2N5911 –1 to –5 –25 5 –1 10 2N5912 –1 to –5 –25 5 –1 15 FEATURES BENEFITS

2N5912

Abstract: 2N5911
Contextual Info: WFBW ALPHA a l.W SEMICONDUCTOR 2N5911/2N5912 Excellence in Analog Power Products Wide Band Matched Dual N-Channel JFETs FEATURES APPLICATIONS • • • • • • • • • High Gain Through lOOMhz gfs>5000iranho Low Offset lOmV Max Low Noise N F=ldB Max

2N5911

Abstract: Siliconix JFET Pairs 2N5912 AN102
Contextual Info: 2N5911/5912 Vishay Siliconix Matched N-Channel JFET Pairs PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 – VGS2j Max (mV) 2N5911 –1 to –5 –25 5 –1 10 2N5912 –1 to –5 –25 5 –1 15 FEATURES BENEFITS

2N5911

Abstract: U421 2N5912 AN102
Contextual Info: 2N5911/5912 Vishay Siliconix Matched N-Channel JFET Pairs PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 – VGS2j Max (mV) 2N5911 –1 to –5 –25 5 –1 10 2N5912 –1 to –5 –25 5 –1 15 FEATURES BENEFITS

2N5911

Abstract: 2N5912
Contextual Info: 2N5911/5912 Matched N-Channel JFET Pairs Product Summary gfs Min mS IG Typ (pA) jVGS1 – VGS2j Max (mV) Part Number VGS(off) (V) V(BR)GSS Min (V) 2N5911 –1 to -5 –25 5 –1 10 2N5912 –1 to -5 –25 5 –1 15 Features Benefits Applications D D D D

2N5911

Abstract: 2N5912
Contextual Info: 2N5911/5912 Matched N-Channel JFET Pairs Product Summary gfs Min mS IG Typ (pA) jVGS1 – VGS2j Max (mV) Part Number VGS(off) (V) V(BR)GSS Min (V) 2N5911 –1 to -5 –25 5 –1 10 2N5912 –1 to -5 –25 5 –1 15 Features Benefits Applications D D D D