2N5686 GAIN Search Results

2n5686 gain

Contextual Info: 2N5686 80V High-current complementary silicon power transistor 5.28 T. 1 of 1 Home Part Number: 2N5686 Online Store 2N5686 Diodes 8 0 V High- c urrent co m plem ent ary s ilico n po w er t ransis t o r

2n5686

Abstract: 2N5685 PNP 2N5684 2N5684
Contextual Info: PNP High-Current Complementary Silicon Power Transistors 2N5684 NPN 2N5685 . . . designed for use in high–power amplifier and switching circuit applications. 2N5686 * • High Current Capability — • • IC Continuous = 50 Amperes. DC Current Gain —

2N5686

Abstract: 2N5684 PNP 2N5684 amplifier 2N5686
Contextual Info: ON Semiconductort PNP High-Current Complementary Silicon Power Transistors 2N5684 NPN 2N5686 . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – • • IC Continuous = 50 Amperes. DC Current Gain –

2n5684

Contextual Info: ON Semiconductort PNP High−Current Complementary Silicon Power Transistors 2N5684 NPN 2N5686 . . . designed for use in high−power amplifier and switching circuit applications. • High Current Capability − • • IC Continuous = 50 Amperes. DC Current Gain −

2N5684

Abstract: 2N5686 PNP 2N5684
Contextual Info: ON Semiconductort PNP High−Current Complementary Silicon Power Transistors 2N5684 NPN 2N5686 . . . designed for use in high−power amplifier and switching circuit applications. • High Current Capability − • • w IC Continuous = 50 Amperes. DC Current Gain −

2N5686 motorola

Abstract: 2N5685 equivalent BU108 MJ15024 MJ15025 AUDIO AMPLIFIER 2N5686 2SA49 2SC140 2N5685 MJ1000 NSP2100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5684 High-Current Complementary Silicon Power Transistors NPN 2N5685 2N5686* . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability — IC Continuous = 50 Amperes.

2N5684G

Abstract: 2N5686G 2N5684 2N5686
Contextual Info: 2N5684 PNP , 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. Features 50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS, 300 WATTS

2N5683

Abstract: 2N5684 2N5685 2N5686 amplifier 2N5686 2NS685 2n5686 gain
Contextual Info: ÆàMOSPEC HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS PNP 2N5683 2N5684 . designed for use in high-power amplifier and switching circuit NPN 2N5685 2N5686 applications FEATURES: * Continuous Collector Current - lc = 50 A * Power Dissipation - PD = 300 W @ Tc = 25°C

Contextual Info: 2N5684 PNP , 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. Features http://onsemi.com 50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS, 300 WATTS

2N5684

Abstract: 2N5684G 2N5686 2N5686G
Contextual Info: 2N5684 PNP , 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. Features http://onsemi.com 50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS, 300 WATTS

2N5686 motorola

Abstract: PNP 2N5684 2N5685 2N5684 motorola 2N5686 2N5683 equivalent 2N5683 2N5684 2N5685 MOTOROLA MOTOROLA 2N5686
Contextual Info: MOTOROLA Order this document by 2N5684/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5684 High-Current Complementary Silicon Power Transistors NPN 2N5685 2N5686* . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability — IC Continuous = 50 Amperes.

2N5683

Abstract: PNP 2N5684 2N5685 TQ-204M 419AR 2n5684 motorola 2N5683 motorola
Contextual Info: MOTOROLA SC 1 EE D I XSTRS/R F I t.3b?254 Q0ÖMS57 3 r-33-J3 r - 3 3 " / ^ PNP MOTOROLA 2N5683, 2N56S4 SEMICONDUCTOR NPN TECHNICAL DATA 2N5685, 2N5686 50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS HIGH-CURRENT COMPLEMENTARY SILICON POWER TRANSISTORS 60 -8 0 V O LT S

Contextual Info: 2N5686+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)50 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)5.0 @I(C) (A) (Test Condition)50

Contextual Info: 2N5686+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)50 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)5.0 @I(C) (A) (Test Condition)50

2N5685

Abstract: 2N5685 MOTOROLA 2n5684 MOTOROLA 2N5686 2N5686 amplifier 2N5686
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N 5684 High-Current Com plem entary Silicon Power TVansistors NPN 2N5685 . . . designed for use In high-power amplifier and switching circuit applications. • • • 2N 5686* High Current Capability — lc Continuous = 50 Amperes.

bsc 68e

Abstract: 2N5684 motorola 2N5685 MOTOROLA 2N5686 2N5684 2N5685 3015 hj N5685 J5685 PNP 2N5684
Contextual Info: MOTOROLA O rder this docum ent by 2N5684/D SEMICONDUCTOR TECHNICAL DATA PNP 2 N 56 84 High-C urrent Com plem entary Silicon Power Transistors NPN 2 N 56 85 . . . designed for use in high-pow er amplifier and switching circuit applications. • • • 2 N5 6 8 6 *

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D 1398 Transistor

Abstract: k 1398 Transistor
Contextual Info: REVISIONS A LL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC TECHNOLOGY. m ulticom p REV DCP # DOC. NO. S P C -F0 05 DESCRIPTION 1885 RELEASED DRAWN DATE EO 02 0 3/0 6

MJ3001 equivalent

Abstract: MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501* • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc

TIP142 TRANSISTOR REPLACEMENT

Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V

bd135 TRANSISTOR REPLACEMENT GUIDE

Abstract: transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc

IC 3526

Abstract: transistor MJ15024 tip3055 equivalent RCA1C13 BU108 2N6277 applications MJ3247 BDX54 motorola MJ3000 2N3791 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD802 Plastic High Power Silicon PNP Transistor 8 AMPERE POWER TRANSISTORS PNP SILICON 100 VOLTS 65 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 1.0 Adc

2N4922

Abstract: BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 15 at IC = 8 A

2SB631

Abstract: equivalent 2n6488 BU108 2SA1046 2SC2233 2N6488 MOTOROLA Motorola 3-351 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N6487 2N6488* PNP 2N6490 2N6491* Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 15 Amperes — hFE = 20 – 150 @ IC = 5.0 Adc