2N5680 ST Search Results

2N5680

Abstract: 2N5679
Contextual Info: 2N5679 2N5680 HIGH VOLTAGE PNP SILICON TRANSISTOR • 2N5680 IS SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N5679, 2N5680 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier

Contextual Info: PNP Power Silicon Transistor 2N5679 & 2N5680 Features • Available in JAN, JANTX and JANTXV per MIL-PRF-19500/582 • TO-39 TO-205AD Package Maximum Ratings (TA = 25°C unless otherwise noted) Symbol 2N5679 2N5680 Units Collector - Emitter Voltage Ratings

Contextual Info: 2N5679 2N5680 MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTORS 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) DESCRIPTION 12.70 (0.500) min. 0.89 max. (0.035) The 2N5679 and 2N5680 are silicon epitaxial planar PNP transistors in jedec TO-39 metal

JANS2N5416

Abstract: JANTX2N3868 2N3202 2N3203
Contextual Info: Microsemi PNP Transistors Part Number JANTX2N3868 JANTX2N3868S JANTXV2N3868 JANTXV2N3868S 2N4236 2N5147 2N5149 2 N5404 2N5406 2N5405 2N5407 2N3208 2N3202 2N3203 2N3204 2N5679 2N5680 2N5415 JAN2N5415 JANS2N5415 JANS2N5415S JANTX2N5415 JANTXV2N5415 2N5416 JAN2N5416

2n5680

Contextual Info: TECHNICAL DATA PNP POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/ 582 Devices Qualified Level 2N5679 JAN JANTX JANTXV 2N5680 MAXIMUM RATINGS TA = 250C unless otherwise noted Ratings Symbol 2N5679 Collector-Emitter Voltage Collector-Base Voltage

2N5680

Abstract: 2N5679 2N5681 2N5682
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS.

2N5680

Abstract: 2N5679 2N5681 2N5682 PNP TO-39
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 Boca Semiconductor Corp. BSC 2N5681 2N5682

TO111 package

Abstract: 2N3774 2N3660 2N3661 2N3740 2N3741 2N3775 2N3776 2N3777 2N3778
Contextual Info: 8 E t l ! Ì M ELECTRO N ICS, INC. COLLECTOR CURRENT = 2 AMPS PNP TYPES Device No 2N3660 2N3661 2N3740 2N3741 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779 2N3780 2N3781 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899 2N4900 2N5344 2N5345 2N5679 2N5680

transistor k 2723

Abstract: 2N5680 WCB411 817 transistor
Contextual Info: Philips Semiconductors Preliminary specification Silicon planar epitaxial transistor PHILIPS INTERNATIONAL 2N5680 SbE D • 711DôEt. 0 0 4 5 ^ 2 777 ■ PHIN QUICK REFERENCE DATA SYMBOL 7 “ ”^ PARAMETER CONDITIONS collector-base voltage collector-emitter voltage

2N5680

Abstract: 2N5679 2N5681 2N5682
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS.

2N5680

Abstract: 2N5679
Contextual Info: TECHNICAL DATA PNP POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/582 Devices Qualified Level 2N5679 JAN JANTX JANTXV 2N5680 MAXIMUM RATINGS TA = 250C unless otherwise noted Ratings Symbol 2N5679 Collector-Emitter Voltage Collector-Base Voltage

2N5680

Abstract: 2N5679
Contextual Info: 2N5679 2N5680 SEME LAB MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTORS 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54

BUX98PI

Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI
Contextual Info: April Ô99 DEVICE TYPE NPN PNP 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490

2N5680

Abstract: 2N5679 2N5682 2N5681
Contextual Info: DATA SHEET 2N5679 2N5681 2N5680 PNP 2N5682 NPN COMPLEMENTARY SILICON HIGH POWER TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5679 Series types are complementary silicon high power transistors manufactured by the epitaxial planar process and designed for general-purpose amplifier and switching applications where high voltages

2N5680

Abstract: 2N5681 2N5682 2N5679 TO-39 CASE to ambient
Contextual Info: Transys Electronics L I M I T E D PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL 2N5679 2N5681 100 100

Contextual Info: 8 E t l ! Ì M ELECTRO N ICS, INC. COLLECTOR CURRENT = 2 AMPS PNP TYPES Device No 2N3660 2N3661 2N3740 2N3741 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779 2N3780 2N3781 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899 2N4900 2N5344 2N5345 2N5679 2N5680

Contextual Info: 2N5679 2N5680 2N5681 2N5682 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5679, 2N5681 series devices are complementary silicon power transistors, manufactured by the epitaxial planar

Contextual Info: P h ilip s S e m ic o n d u c to rs ^ bb53B31 0038177 STT H IA P X Preliminary specification Silicon planar epitaxial transistor 2N5680 N AUER PHILIPS/DISCRETE bBE D QUICK REFERENCE DATA PARAMETER SYMBOL collector current MIN. MAX. UNIT - V - 120 V - 1 A Tcase < 25 °C

transistor jc 817

Abstract: 2n5680 WCB410
Contextual Info: philips Sem iconductors • ^ 53^31 0 0 HS177 ATT ■ APX Preliminary specification Silicon planar epitaxial transistor 2N5680 b^E D N AP1ER PHIL I P S / D I S C R E T E Q U IC K R E F E R E N C E DATA PARAM ETER SYM BO L MIN. CONDITIONS MAX. ~VCBO “ VcEO

2N5679

Abstract: 2N5680 2N5681 2N5682
Contextual Info: 2N5679 2N5680 SEME LAB MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTORS 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 )  ! 2 .5 4 (0 .1 0 0 ) 0 .6 6 (0 .0 2 6 )

2N5680

Abstract: 2N5679
Contextual Info: 2N5679 2N5680 SEME LAB MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTORS 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 )  ! 2 .5 4 (0 .1 0 0 ) 0 .6 6 (0 .0 2 6 )

Contextual Info: PNP NPN 2N5679 2N5681 2N5680 2N5682 LOW-POWER COMPLEMENTARY SILICON TRANSISTORS 1 AM PERE C O M P L E M E N T A R Y S IL IC O N P O W E R T R A N S IS T O R S 100-120 V O L T S 10 W A T T S .d e s ig n e d f o r u s e a s a d r i v e r f o r h i g h - p o w e r t r a n s i s t o r s in g e n e r a l - p u r p o s e

2N5679

Abstract: 2N5680 2N5681 C-2688 MIL-PRF19500 JANTXV2N5680
Contextual Info: The documentation process conversion measures necessary to comply with this revision shall be completed by 21 November 1999. INCH-POUND MIL-PRF-19500/582A 21 August 1999 SUPERSEDING MIL-S-19500/582 3 May 1990 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON AMPLIFIER,

2N5680

Abstract: 2N5679 2N5681 2N5682 JANTX2N5679
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 April 2009. INCH-POUND MIL-PRF-19500/582B 30 January 2009 SUPERSEDING MIL-PRF-19500/582A 21 August 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON AMPLIFIER,