TRANSISTOR 2N5550
Abstract: 2n5551 2N5551 DATA C2N5550 2N5400 2N5401 2N5550 SC-43A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1999 Apr 23 2004 Oct 28 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES
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m3d1862n55502n55512n5400+82n5401mam279sca76r75/04/pp7transistor 2n55502n5551 datac2n5550sc-43a
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2N5551 diodes inc
Abstract: 2N5551 circuit diodes inc 2N5551 2N5550 2N5550 motorola 1N914 2N5551 2N5551 TO92 2N5551 motorola
Contextual Info: MOTOROLA Order this document by 2N5550/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector – Emitter Voltage
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2n5550/d2n55502n55512n5551 diodes inc+62n5551 circuitdiodes inc 2n55512n5550 motorola1n9142n5551 to922n5551 motorola
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2N5551B
Abstract: tr 5551 2N5551 SOT23 2n5551 BR 5551 2N5551 circuit 2N5551BU BR N 5551
Contextual Info: 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
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2n5551-mmbt55512n5551ot-23+72n5551btr 55512n5551 sot23br 55512n5551 circuit2n5551bubr n 5551
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Contextual Info: 2N5551 / MMBT5551 NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
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2n5551mmbt5551ot-23 |
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Contextual Info: DISCRETE SEMICONDUCTORS 2N5550; 2N5551 NPN high-voltage transistors 1999 Apr 23 Product specification Supersedes data of 1997 Apr 09 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551
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2n55502n5551115002/00/03/pp8 |
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diodes inc 2N5551
Abstract: 2N555 2N5551 hz 9102 2N5400 2N5401 2N5550 BP317 C2N5550
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1997 Apr 09 1999 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 PINNING
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m3d1862n55502n55512n5400+92n5401mam279sca63115002/00/03/pp8diodes inc 2n55512n555hz 9102bp317c2n5550
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2N5551G
Abstract: 2N5551 2N5550G C2N5550 2N55551ZL1 2N5550RLRPG 2N5551RL1G 2N5551RLRAG 2N5551RLRPG 1N914
Contextual Info: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value VCEO 2N5550 2N5551 Collector − Base Voltage Vdc 140
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2n55502n55512n5550/d2n5551g+82n5550gc2n55502n55551zl12n5550rlrpg2n5551rl1g2n5551rlrag2n5551rlrpg1n914
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2N5551
Abstract: 2N5551 circuit motorola 1N914 diode datasheet 1N914 2N5550 2N5551 diodes inc 2N5551 motorola
Contextual Info: MOTOROLA Order this document by 2N5550/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector – Emitter Voltage
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2n5550/d2n55502n55512n5551 circuit+4motorola 1n914 diode datasheet1n9142n5551 diodes inc2n5551 motorola
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2N5551
Abstract: 2N55551 2N5551 circuit ALL 2N5551
Contextual Info: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Package is Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Collector − Emitter Voltage VCEO 140 160 Vdc Collector − Base Voltage
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2n55502n55512n5550/d2n55551+22n5551 circuitall 2n5551
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transistor equivalent 2n5551
Abstract: 2N5551 equivalent transistor 2n5551 equivalent 2n2222 2n5401 2n5551 2N5551 148 BC237 2n3819 equivalent ic 2N5551 motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol 2N5550 2N5551 Unit Collector – Emitter Voltage VCEO 140 160 Vdc Collector – Base Voltage
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2n55502n5551226aaresistanc218a+12msc1621t1msc2404msd1819amv1620transistor equivalent 2n55512n5551 equivalenttransistor 2n5551 equivalent2n2222 2n5401 2n55512n5551 148bc2372n3819 equivalent ic2n5551 motorola
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2N5551 fairchild
Abstract: 2N5551 2N5551 SOT23 2N5551 circuit 2N5551 SOT-23 MMBT5551 MMBT5551 3s sot23 marking 3S marking 3s SM 3197
Contextual Info: 2N5551 / MMBT5551 NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
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2n5551mmbt5551ot-232n5551 fairchild+72n5551 sot232n5551 circuit2n5551 sot-23mmbt5551 3ssot23 marking 3smarking 3ssm 3197
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2N5551 SOT23
Abstract: 2N5551 circuit 2N5551 MMBT5551 2N5551 fairchild
Contextual Info: 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
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2n5551-mmbt55512n5551ot-23+32n5551 sot232n5551 circuit2n5551 fairchild
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2N5551 circuit
Abstract: transistor equivalent 2n5551 2N5551 2N555 2N5550G 1N914 2N5550 2N5550RLRA 2N5550RLRAG 2N5550RLRP
Contextual Info: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value Unit VCEO 2N5550 2N5551 Collector − Base Voltage
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2n55502n55512n5550/d2n5551 circuit+7transistor equivalent 2n55512n5552n5550g1n9142n5550rlra2n5550rlrag2n5550rlrp
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2n5551
Abstract: 2N55551 2N5551 circuit 2n5550
Contextual Info: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit
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2N5551
Abstract: BF242 CBVK741B019 F63TNR MMBT5551 PN2222N
Contextual Info: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2n5551mmbt5551ot-23bf242+3cbvk741b019f63tnrpn2222n
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2N55551
Abstract: 2N5551 2N5550 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551G 2N5551RL1 2N5551RLRA 2N5551RLRM
Contextual Info: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit
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2n55502n55512n5550/d2n55551+72n5550rlra2n5550rlrp2n5550rlrpg2n5551g2n5551rl12n5551rlra2n5551rlrm
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2N5551
Contextual Info: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value VCEO 2N5550 2N5551 Collector − Base Voltage Vdc 140
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2N5551
Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N 2N5551 SOT-23 BF242 CJE SOT-23
Contextual Info: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2n5551mmbt5551ot-23cbvk741b019+5f63tnrpn2222n2n5551 sot-23bf242cje sot-23
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2N5551
Abstract: 2N5550 2N5550G 2N55551 2N5551G 2N55551ZL1G 2N5551 TO92 2N5550RLRPG 2N5551RL1G 2N5551RLRAG
Contextual Info: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value VCEO Vdc 140 160 2N5550 2N5551 Collector − Base Voltage VCBO Vdc VEBO
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2n55502n55512n5550g2n55551+62n5551g2n55551zl1g2n5551 to922n5550rlrpg2n5551rl1g2n5551rlrag
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2n5551
Abstract: 2N5551 SOT23 MMBT5551
Contextual Info: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2n5551mmbt5551ot-232n5551 sot23 |
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2H5551
Abstract: 2Ns551
Contextual Info: 2N5550 2N5551* M AXIM UM RATINGS Sym bol 2N5550 2N5551 U n it Collector-Emitter Voltage VCEO 140 160 Vdc Collector-Base Voltage VCBO 160 180 Vdc Emitter-Base Voltage Rating vebo 6.0 Vdc Collector Current — Continuous fC 600 m Adc Total Device Dissipation @ TA - 25°C
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2n55502n5551o-226aa2h5551+12ns551
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2N5550
Abstract: 5551 2n 5551 2N5551 motorola 2NS551 2NSS51
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon COLLECTOR 3 ‘Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Vdc C o lle c to r-E m itte r Voltage VCEO 140 160 C o lle c to r-B a s e Voltage
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2n55502n55511n9142ns851+555512n 55512n5551 motorola2ns5512nss51
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Contextual Info: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Sourced from Process 16. Absolute Maximum Ratings* Symbol
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2n5551mmbt5551ot-23 |
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2N5551
Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N transistor 2n5551
Contextual Info: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 SOT-23 E B Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol
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2n5551mmbt5551ot-23cbvk741b019+3f63tnrpn2222ntransistor 2n5551
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