2N5551 CIRCUIT Search Results

2N5551 circuit

Abstract: 2N5550 2n5551
Contextual Info: ON Semiconductort 2N5550 2N5551* Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector–Emitter Voltage VCEO 140 160 Vdc Collector–Base Voltage VCBO 160 180 Vdc Emitter–Base Voltage

TRANSISTOR 2N5550

Abstract: 2n5551 2N5551 DATA C2N5550 2N5400 2N5401 2N5550 SC-43A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1999 Apr 23 2004 Oct 28 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES

2N5551G

Abstract: 2N5551 2N5550G C2N5550 2N55551ZL1 2N5550RLRPG 2N5551RL1G 2N5551RLRAG 2N5551RLRPG 1N914
Contextual Info: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value VCEO 2N5550 2N5551 Collector − Base Voltage Vdc 140

2N5551 diodes inc

Abstract: 2N5551 circuit diodes inc 2N5551 2N5550 2N5550 motorola 1N914 2N5551 2N5551 TO92 2N5551 motorola
Contextual Info: MOTOROLA Order this document by 2N5550/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector – Emitter Voltage

2n5551

Abstract: 2N55551 2N5551 circuit 2n5550
Contextual Info: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit

2N5551 circuit

Abstract: 2N5550 2N5551 2N555 1N914
Contextual Info: ON Semiconductort 2N5550 2N5551* Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector–Emitter Voltage VCEO 140 160 Vdc Collector–Base Voltage VCBO 160 180 Vdc Emitter–Base Voltage

2N55551

Abstract: 2N5551 2N5550 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551G 2N5551RL1 2N5551RLRA 2N5551RLRM
Contextual Info: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit

2N5551

Abstract: 2N5551 circuit motorola 1N914 diode datasheet 1N914 2N5550 2N5551 diodes inc 2N5551 motorola
Contextual Info: MOTOROLA Order this document by 2N5550/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector – Emitter Voltage

Contextual Info: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Sourced from Process 16. Absolute Maximum Ratings* Symbol

2N5551

Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N transistor 2n5551
Contextual Info: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 SOT-23 E B Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol

2n5551

Abstract: 2N5551 SOT23
Contextual Info: 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 MMBT5551 3 2 TO-92 1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector Ordering Information 1

2N5551B

Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU
Contextual Info: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  FEATURES * High collector-emitter voltage: VCEO=160V * High current gain  APPLICATIONS * Telephone switching circuit * Amplifier  ORDERING INFORMATION

2N5551G

Abstract: transistor 2n5551 2N5551-NPN 2N5551 2N5551 circuit VCEO160V 2N5551-X-AB3-R C2N5551
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ 1 FEATURES SOT-89 * High collector-emitter voltage: VCEO=160V * High current gain „ APPLICATIONS 1 TO-92 * Telephone switching circuit * Amplifier „ ORDERING INFORMATION

transistor equivalent 2n5551

Abstract: transistor 2n5551 equivalent 2N5551 equivalent SHD426108
Contextual Info: SHD426108 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 944, REV. - NPN SMALL SIGNAL TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N5551 Absolute Maximum Ratings* Symbol Parameter VCEO VCBO VEBO IC TJ, Tstg TA = 25°C unless otherwise noted

Contextual Info: UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 1 APPLICATIONS *Telephone switching circuit *Amplifier TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified

transistor equivalent 2n5551

Abstract: transistor 2n5551 equivalent SHD431108 2N5551 equivalent 2039 transistor
Contextual Info: SENSITRON SEMICONDUCTOR SHD431108 TECHNICAL DATA DATA SHEET 2039, REV - SMALL SIGNAL TRANSISTOR - NPN Electrically Equivalent to 2N5551 DESCRIPTION: A SINGLE NPN SMALL SIGNAL TRANSISTOR IN A CERAMIC LCC-3 PACKAGE. MAXIMUM RATINGS RATING (ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED).

Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5551 TO- 92 CBE High Voltage NPN Transistor For General Purpose And Telephony Applications.

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR E 2N5551 TO- 92 CBE BC High Voltage NPN Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified

transistor 2n5551

Abstract: 2N5551
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5551 TO- 92 CBE Boca Semiconductor Corp. BSC High Voltage NPN Transistor For General Purpose And Telephony Applications.

TE 555-1

Abstract: 2N5551A A5T5550 5551a 2n5550a 5T5551 BR N 5551
Contextual Info: TY P ES 2N5550, 2N5551, A5T5550. A5T5551 N -P -N SILIC O N TR A N S IS TO R S B U L L E T IN N O . D L -S 7 3 1 1 9 3 5 , M A R C H 1 9 7 3 S ILE C T t TR A N SISTO R S* FOR G E N E R A L PURPOSE, H IG H -V O LT A G E A M P L IF IE R A PPLICATIO N S • High V B R C EO • ■■140 V (2N 5550, A 5 T 5 55 0) or 160 V (2N 5551, A 5T5551)

IN4007

Abstract: transistor IN4007 IN4007 DC IN4007 F 5V to 240V relay ic IN4007 voltage regulator PT8A2544 2n5551 128 240v relay ic timer relay
Contextual Info: Data Sheet PT8A2524-6/34-6/44-6 Universal Timer Controller |

in4007

Contextual Info: PT8A2524-6/34-6/44-6 | |

Contextual Info: PT8A3514/15/16/17/18/19 A/B | |