2N5550 Search Results

2N5551 circuit

Abstract: 2N5550 2N5551 2N555 1N914
Contextual Info: ON Semiconductort 2N5550 2N5551* Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector–Emitter Voltage VCEO 140 160 Vdc Collector–Base Voltage VCBO 160 180 Vdc Emitter–Base Voltage

transistor 2n5550

Abstract: 2N5550
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5550 TO-92 Plastic Package High Voltage NPN Transistor For General Purpose and Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

transistor 2n5550

Abstract: 2N5550
Contextual Info: SEMICONDUCTOR 2N5550 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking 2N 1 5550 K 3 No. Item 816 2 4 Marking Description 2N Series Name 5550 Device Name KEC K KEC CORP. Lot No. 816 Device Name 1998. 6. 23 Revision No : 0 8 Year

2N555

Abstract: 2N5550S SOT-23 2N5550S
Contextual Info: SEMICONDUCTOR 2N5550S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZP 1 2 Item Marking Description Device Mark ZP 2N5550S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

transistor 2n5550

Abstract: 2N5550
Contextual Info: SEMICONDUCTOR 2N5550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V N E K Low Leakage Current. G D J : ICBO=100nA Max. , VCB=100V

2N5550

Contextual Info: 2N5550 0.6 A, 160 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Switching and amplification in high voltage Applications such as telephony Low current max.600mA

2N5401

Abstract: transistor 2N5401 2N5400 2N5550 2N5551 st2n5401
Contextual Info: ST 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.

2N5550

Abstract: 2N5551
Contextual Info: 2N5550 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR * C o lle cto r-E m itte r Voltage: Veto =140V • C o lle c to r D issip a tio n : P c m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta =25°C) C h a ra c te ristic Collector-Base Voltage Collector-Em itter Voltage

2N5401

Contextual Info: 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations.

2SC9830

Abstract: 2SC983Y BSW69 2SC983-Y BF119 mps-002 SK3244 BF117 bf305 A5T5550
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 >= PMBT5550 PMBT5550 BFY43 BFY43 BF117 BF117 MPS002 TRS140 SE701S A5T5550 2N5550 TMPT5550 MMBT5550 MMBT5550 MMBT5550 2N5831 MMBT5551 JE5550A 2N5832 BC532 ~4261r 25 30 - 2N4270 JE5550 BSR19 A BSR19 (A)

2n 5550

Abstract: 2N5551 diodes inc 2n5551
Contextual Info: MOTOROLA Order this document by 2N5550/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N 5551* NPN Silicon COLLECTOR 3 MAXIMUM RATINGS Symbol 2N5550 2N5551 Unit C o lle c to r-E m itte r Voltage Rating VCEO 140 160 Vdc C o lle c to r-B a s e Voltage

2n5551

Abstract: 2N5550 st 2n5551
Contextual Info: 2N5550 2N5551* M AXIM UM RATINGS Sym bol 2N5550 2N5551 U n it C oilector-E m itter Voltage VCEO 140 160 Vdc Collector-Base Voltage v CBO 160 180 Vdc Emitter-Base Voltage R ating v EBO 6.0 Vdc C ollector C urrent — C ontinuous 'c 600 m Adc Total Device D issipation

2N5551

Abstract: 2N5550 2N5550G 2N55551 2N5551G 2N55551ZL1G 2N5551 TO92 2N5550RLRPG 2N5551RL1G 2N5551RLRAG
Contextual Info: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value VCEO Vdc 140 160 2N5550 2N5551 Collector − Base Voltage VCBO Vdc VEBO

diodes inc 2N5551

Abstract: 2N555 2N5551 hz 9102 2N5400 2N5401 2N5550 BP317 C2N5550
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1997 Apr 09 1999 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 PINNING

2N5550 EBC

Abstract: 2N5401 2N5400 5551 2N5550 T092A T0-92A N5400
Contextual Info: 2N5401 2N5551 2N 5550 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS i CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.

TE 555-1

Contextual Info: 2N5550 2N5551 FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC04 OR DATA SHEET SILICON N-P-N HIGH-VOLTAGE TRANSISTORS N -P -N high-voltage small-signal transistors fo r general purposes and especially te le p h o n y applications and encapsulated in a T O -9 2 package.

Contextual Info: 2N5550 / 2N5551 2N5550 / 2N5551 General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2005-12-22 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions / Maße [mm] 625 mW Plastic case

Contextual Info: 2N5550 / 2N5551 2N5550 / 2N5551 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2006-06-17 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case

TRANSISTOR 2N5550

Abstract: 2n5551 2N5551 DATA C2N5550 2N5400 2N5401 2N5550 SC-43A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1999 Apr 23 2004 Oct 28 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES

2N5551

Abstract: 2N5550 2N555 ic CD4081 pin diagram datasheet 2N5400 2N5401 st 2n5551
Contextual Info: ST 2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors ST 2N5400 and ST 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations.

2n3904 2n3906

Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
Contextual Info: SIGNAL TRANSISTORS SM ALL SIGNAL TRANSISTOR Type No. TO-92 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2N5401 2N5550 2N5551 MPS2222 MPS2222A MPS2907 MPS2907A MPSA05 MPSA06 MPSA13 MPSA14 MPSA42 MPSA43 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64

TE 555-1

Abstract: 2N5551A A5T5550 5551a 2n5550a 5T5551 BR N 5551
Contextual Info: TY P ES 2N5550, 2N5551, A5T5550. A5T5551 N -P -N SILIC O N TR A N S IS TO R S B U L L E T IN N O . D L -S 7 3 1 1 9 3 5 , M A R C H 1 9 7 3 S ILE C T t TR A N SISTO R S* FOR G E N E R A L PURPOSE, H IG H -V O LT A G E A M P L IF IE R A PPLICATIO N S • High V B R C EO • ■■140 V (2N 5550, A 5 T 5 55 0) or 160 V (2N 5551, A 5T5551)

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR 2N5550 AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: Veto =140V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (T. =25°C) Characteristic Symbol Collector-Base Vbltage Collector-Emitter Voltage Emitter-Base Voltage