2N5550 EBC
Abstract: 2N5401 2N5400 5551 2N5550 T092A T0-92A N5400
Contextual Info: 2N5401 2N5551 2N 5550 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS i CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.
|
OCR Scan
|
2n54002n54012n55502n5551+7t0-92a2n555q600ma2n5550 ebc5551t092an5400
|
PDF
|
2N5401
Abstract: transistor 2N5401 1N914 2N5400
Contextual Info: ON Semiconductort 2N5401* Amplifier Transistors PNP Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector–Emitter Voltage VCEO 120 150 Vdc Collector–Base Voltage VCBO 130 160 Vdc Emitter–Base Voltage VEBO
|
Original
|
2n54012n5400226aar14525+32n5401/dtransistor 2n54011n914
|
PDF
|
2N5401 fairchild
Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 SOT-23 E B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings*
|
Original
|
2n5401mmbt5401ot-232n5401 fairchild |
PDF
|
2N5401
Abstract: CBVK741B019 F63TNR MMBT5401 PN2222N 2N5401 SOT-23 mark 2L SOT-23 RB103
Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
2n5401mmbt5401ot-23cbvk741b019+5f63tnrpn2222n2n5401 sot-23mark 2l sot-23rb103
|
PDF
|
2N5401
Abstract: 2N54XX transistor 2N5401 1N914 2N5400 2N5401RL1 2N5401RLRA 2N5401RLRAG 2N5401RLRM 2N5401ZL1
Contextual Info: 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector − Emitter Voltage VCEO 120 150 Vdc Collector − Base Voltage
|
Original
|
2n54012n54002n5401/d2n54xx+7transistor 2n54011n9142n5401rl12n5401rlra2n5401rlrag2n5401rlrm2n5401zl1
|
PDF
|
2N5401
Abstract: 2N5400 motorola 1N914 diode datasheet transistor 2N5401 1N914 2N5400 MOTOROLA 2N5401 MOTOROLA
Contextual Info: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage
|
Original
|
2n5400/d2n54002n5401motorola 1n914 diode datasheet+4transistor 2n54011n9142n5400 motorola2n5401 motorola
|
PDF
|
diode 2N5401
Abstract: 2N5400 2N5401 transistor 2N5401 1N914 2N5400G 2N5400RLRP 2N5400RLRPG 2N5401G 2N5401RL1
Contextual Info: 2N5400, 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector − Emitter Voltage VCEO 120 150 Vdc Collector − Base Voltage
|
Original
|
2n54002n54012n5400/ddiode 2n5401+7transistor 2n54011n9142n5400g2n5400rlrp2n5400rlrpg2n5401g2n5401rl1
|
PDF
|
str g 5551
Abstract: str G 5551 47 transistor cc 5551 transistor 2n5401 2n5401 philips a/STR/LH/8/str g 5551
Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 2N5401 PNP high-voltage transistor 1999 Apr 08 Product specification Supersedes data of 1997 May 22 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor 2N5401
|
OCR Scan
|
2n5401115002/00/03/pp8str g 5551str g 5551 47+4transistor cc 5551transistor 2n54012n5401 philipsa/str/lh/8/str g 5551
|
PDF
|
2N5401 SOT-23
Abstract: 2N5401 fairchild transistor 2N5401 2N5401 MMBT5401
Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
2n5401mmbt5401ot-232n5401 sot-23+22n5401 fairchildtransistor 2n5401
|
PDF
|
2N5401 fairchild
Abstract: 2N5401 SOT-23
Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings*
|
Original
|
2n5401mmbt5401ot-232n5401 fairchild+12n5401 sot-23
|
PDF
|
transistor 2N5401
Abstract: 2N5401 2N5551 SC-43A 2n5401 transistor of pnp transistor 2n5401
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor Product specification Supersedes data of 1999 Apr 08 2004 Oct 28 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low current max. 300 mA
|
Original
|
m3d1862n54012n5551mam280+6sca76r75/04/pp6transistor 2n5401sc-43a2n5401 transistorof pnp transistor 2n5401
|
PDF
|
2N5401
Abstract: 2N5401 motorola 2N5400 2N5401 TO-39
Contextual Info: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA 2N5400 2N5401* Amplifier Transistors PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector–Emitter Voltage
|
Original
|
2n5400/d2n54002n5401226aa+22n5401 motorola2n5401 to-39
|
PDF
|
2n5401y
Abstract: 2N5401yc 2N5401 fairchild 2N5401-Y 2N5401C-Y mark 2L SOT-23 transistor 2L 5401 2N5401YBU 5401 GM
Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
2n5401mmbt5401ot-232n5401ybu+102n5401rm2n5401ch1ta2n5401y2n5401yc2n5401 fairchild2n5401-y2n5401c-ymark 2l sot-23transistor 2l 54015401 gm
|
PDF
|
2N5401 fairchild
Abstract: transistor 2N5401 2N5401 2n5401 transistor
Contextual Info: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor
|
Original
|
2n5401625mw2n5401 fairchildtransistor 2n5401+12n5401 transistor
|
PDF
|
|
|
2N5401
Abstract: transistor 2N5401 diodes inc 2N5551 2N5551 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor Product specification Supersedes data of 1997 May 22 1999 Apr 08 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low current max. 300 mA
|
Original
|
m3d1862n54012n5551mam280+5sca63115002/00/03/pp8transistor 2n5401diodes inc 2n5551bp317
|
PDF
|
transistor equivalent book 2N5401
Abstract: 2n5401 equivalent BC237 918 TRANSISTOR PNP bc547 collector base emitter 2n5401 148 2n5400 replacement 2n2222 2n5401 2n5551
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage Rating VCEO 120 150 Vdc Collector – Base Voltage
|
Original
|
2n54002n5401226aaresist218a+12msc1621t1msc2404msd1819amv1620transistor equivalent book 2n54012n5401 equivalentbc237918 transistor pnpbc547 collector base emitter2n5401 1482n5400 replacement2n2222 2n5401 2n5551
|
PDF
|
mark 2L SOT-23
Abstract: MARKING W2 SOT23 TRANSISTOR MARKING W3 SOT23 TRANSISTOR 2N5401B 2N5401BU 5401 SOT-23 2N5401 fairchild transistor marking code ne SOT-23 transistor 2N 5401 mark 2L SOT-23 6
Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
2n5401mmbt5401ot-232n5401ra+122n5401bu2n5401rm2n5401tfmark 2l sot-23marking w2 sot23 transistormarking w3 sot23 transistor2n5401b5401 sot-232n5401 fairchildtransistor marking code ne sot-23transistor 2n 5401mark 2l sot-23 6
|
PDF
|
mark 2L SOT-23
Abstract: 2N5401 SOT-23 2N5401 CBVK741B019 F63TNR MMBT5401 PN2222N 2n5401 transistor MJE 350 PNP power transistor
Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
2n5401mmbt5401ot-23mark 2l sot-23+62n5401 sot-23cbvk741b019f63tnrpn2222n2n5401 transistormje 350 pnp power transistor
|
PDF
|
transistor 5401
Abstract: 2N5401NLBU 2N5401 fairchild 5401 transistor transistor 2N 5401 2N5401BU Transistor B C 458 2n5401 application
Contextual Info: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor
|
Original
|
2n5401625mwo-92-32n5401bu+102n5401cta2n5401nlbu2n5401ta2n5401tartransistor 54012n5401 fairchild5401 transistortransistor 2n 5401transistor b c 4582n5401 application
|
PDF
|
sot23 t04
Abstract: mark t04 sot 2n5401 sot 23
Contextual Info: 2N5401 I MMBT5401 D iscrete POW ER & S ig n a l Technologies tß National Semiconductor" 2N5401 MMBT5401 SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.
|
OCR Scan
|
2n5401mmbt5401ot-23bs01130+500407cnlsd113dsot23 t04mark t04 sot2n5401 sot 23
|
PDF
|
LSC 132
Abstract: 2N5401 MMBT5401 357t
Contextual Info: 2N5401 I MMBT5401 <S> D is c r e te P O W E R & S i g n a l T e c h n o lo g ie s _ National Semiconductor"' 2N5401 MMBT5401 PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.
|
OCR Scan
|
sq1130dd4d711lsc 1322n5401+2mmbt5401357t
|
PDF
|
|
Contextual Info: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE
|
Original
|
2n5401-150v625mwqw-r201-001 |
PDF
|
2N5401
Abstract: 2n5401 application
Contextual Info: SEMICONDUCTOR 2N5401 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES ᴌHigh Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V N E K ᴌLow Leakage Current. : ICBO=-50nA Max. @VCB=-120V
|
Original
|
2n5401-160v-150v-50na+5-120v-50ma-10ma100mhz2n5401 application
|
PDF
|
|
Contextual Info: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE
|
Original
|
2n5401-150v625mw |
PDF
|
