2N5400S Search Results
2N5400S Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 2N5400S | Korea Electronics | TRANS GP BJT PNP 120V 0.6A 3SOT-23 | Original | 67.93KB | 2 | ||
| 2N5400S | Korea Electronics | EPITAXIAL PLANAR PNP TRANSISTOR | Scan | 146.35KB | 2 | ||
| 2N5400S | Korea Electronics | High Voltage Transistor | Scan | 158.46KB | 2 |
2N5400S Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: SEMICONDUCTOR 2N5400S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES D ・High Collector Breakdwon Voltage 2 A 3 G : VCBO=-130V, VCEO=-120V H ・Low Leakage Current. 1 : ICBO=-100nA Max. @VCB=-100V |
Original |
2n5400s-100na-100v-50ma+3 | |
|
Contextual Info: SEM IC O N D U C T O R 2N5400S TECHN ICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. L B L D IM FEATURES • High Collector Breakdwon Voltage 2.93 ± 0.20 B 1.3040.20/-0.15 C : V cbo=-130V, V ceo=-120V • Low Leakage Current. |
OCR Scan |
2n5400s-130v-120v-100na+4 | |
marking zn
Abstract: 2N5400S
|
Original |
2n5400sot-23marking zn | |
2N5400SContextual Info: SEMICONDUCTOR 2N5400S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES : VCBO=-130V, VCEO=-120V H ᴌLow Leakage Current. 3 G A 2 D ᴌHigh Collector Breakdwon Voltage 1 : ICBO=-100nA Max. @VCB=-100V |
Original |
2n5400s-130v-120v-100na+4 | |
2N5400SContextual Info: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. 2N5400S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : V Cbo = - 1 3 0 V , A MILLIMETERS 2.93+0.20 B 1.30+0.20/-0.15 |
OCR Scan |
2n5400s-130v-100na-100v+3 | |
2N5400SContextual Info: SEMICONDUCTOR 2N5400S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES : VCBO=-130V, VCEO=-120V D High Collector Breakdwon Voltage 3 G A 2 H Low Leakage Current. 1 : ICBO=-100nA Max. @VCB=-100V |
Original |
2n5400s-130v-120v-100na+4 | |
|
Contextual Info: SEMICONDUCTOR 2N5400S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR Note : * Package Mounted On 99.5% Alumina 10 1999. 11. 30 Revision No : 2 1/2 |
Original |
2n5400s | |
2N5400SContextual Info: SEMICONDUCTOR TECHNICAL DATA 2N5400S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES DIM • High Collector Breakdwon Voltage : V cbo= -1 30 V , V CEo = -1 2 0 V • Low Leakage Current. : I c b o = _ 1 OOnA Max. @VCB=-100V |
OCR Scan |
2n5400s-130v-120v-100v+3 | |
alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
|
Original |
hig86-755-3679515alternator diode 1776 b2az marking transistor sot-23smd sot23 transistor mark y2+7 | |
khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
|
Original |
2n2904ebc859kds135s2n2906e+16 | |
KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
|
Original |
2n2904ebc859kds135s2n2906e+16 | |
MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
|
Original |
mn1280kgt50n60kdabc547 smd transistorkia1117af+6 | |
oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
|
Original |
kia7900pitc7sh04fukic7sh04fusc604+16 | |
MB4213
Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
|
Original |
ssip-12kia6283kkia7217apssip-10+13 |